Publication Date:
2011-08-27
Description:
Author(s): B. C. Chapler, R. C. Myers, S. Mack, A. Frenzel, B. C. Pursley, K. S. Burch, E. J. Singley, A. M. Dattelbaum, N. Samarth, D. D. Awschalom, and D. N. Basov We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga 1− x Mn x As, which persists across the IMT to the highest doping... [Phys. Rev. B 84, 081203] Published Fri Aug 26, 2011
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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