Publikationsdatum:
2013-03-06
Beschreibung:
Author(s): Muhammad Usman, Christopher A. Broderick, Zahida Batool, Konstanze Hild, Thomas J. C. Hosea, Stephen J. Sweeney, and Eoin P. O’Reilly The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy ( E g ) accompanied with a large increase in the spin-orbit splitting energy (△ S O ), leading to the condition that △ S O 〉 E g , which is anticipated to reduce hot-hole producing Auger recombination losses whereby... [Phys. Rev. B 87, 115104] Published Tue Mar 05, 2013
Schlagwort(e):
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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