ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-19
    Description: We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO 3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO 3 . As a result of the large dielectric constant of SrTiO 3 and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ∼1.6 × 10 14  cm −2 electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ∼68 mA/mm, ∼20× times larger than the best demonstrated SrTiO 3 MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO 3 in increasing the pinch off voltage of the MESFET.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 2
    facet.materialart.
    Unknown
    Alleviating polarity-conflict at the heterointerfaces of KTaO3/GdScO3 polar complex-oxides (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-09
    Description: We have synthesized and investigated the heterointerfaces of KTaO 3 (KTO) and GdScO 3 (GSO), which are both polar complex-oxides along the pseudo-cubic [001] direction. Since their layers have the same, conflicting net charges at interfaces, i.e., KO(−1)/ScO 2 (−1) or TaO 2 (+1)/GdO(+1), forming the heterointerface of KTO/GSO should be forbidden due to strong Coulomb repulsion, the so-called polarity conflict . However, we have discovered that atomic reconstruction occurs at the heterointerfaces between KTO thin-films and GSO substrates, which effectively alleviates the polarity conflict without destroying the hetero-epitaxy. Our result demonstrates one of the important ways to create artificial heterostructures from polar complex-oxides.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 3
    facet.materialart.
    Unknown
    Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-25
    Description: Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO 2 and ZrO 2 gate stacks with extremely high accumulation capacitance densities of more than 5  μ F/cm 2 at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10 12  cm −2  eV −1 range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO 2 and small quantities of In 2 O 3 , but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 4
    facet.materialart.
    Unknown
    Surface reconstructions in molecular beam epitaxy of SrTiO3 (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-11-12
    Description: We show that reflection high-energy electron diffraction (RHEED) can be used as a highly sensitive tool to track surface and resulting film stoichiometry in adsorption-limited molecular beam epitaxy of (001) SrTiO 3 thin films. Even under growth conditions that yield films with a lattice parameter that is identical to that of stoichiometric bulk crystals within the detection limit of high-resolution x-ray diffraction (XRD), changes in surface reconstruction occur from (1 × 1) to (2 × 1) to c(4 × 4) as the equivalent beam pressure of the Ti metalorganic source is increased. These surface reconstructions are correlated with a shift from mixed SrO/TiO 2 termination to pure TiO 2 termination. The crossover to TiO 2 surface termination is also apparent in a phase shift in RHEED oscillations observed at the beginning of growth. Comparison with prior results for carrier mobilities of doped films shows that the best films are grown under conditions of a TiO 2 -saturated surface [c(4 × 4) reconstruction] within the XRD growth window.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...