Publication Date:
2013-08-01
Description:
Author(s): L. Jiang, P. E. Sims, G. Grzybowski, R. T. Beeler, A. V. G. Chizmeshya, D. J. Smith, J. Kouvetakis, and J. Menéndez Ab initio theoretical simulations of Al(As 1− x N x )Si 3 alloys, a new class of optoelectronic materials, confirm that these compounds are likely to be disordered via a mechanism that preserves the integrity of the constituent III-V-Si 3 tetrahedra but randomizes their orientation in the average diamond l... [Phys. Rev. B 88, 045208] Published Wed Jul 31, 2013
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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