Publikationsdatum:
2012-06-22
Beschreibung:
Author(s): S. Lautenschlaeger, S. Eisermann, G. Haas, E. A. Zolnowski, M. N. Hofmann, A. Laufer, M. Pinnisch, B. K. Meyer, M. R. Wagner, J. S. Reparaz, G. Callsen, A. Hoffmann, A. Chernikov, S. Chatterjee, V. Bornwasser, and M. Koch We report on the optical properties of nitrogen acceptor-doped ZnO epilayers in the medium and high doping regimes using temperature and excitation power-dependent, as well as time-resolved photoluminescence experiments. The epilayers were doped with ammonia during homoepitaxial growth on ZnO single... [Phys. Rev. B 85, 235204] Published Thu Jun 21, 2012
Schlagwort(e):
Semiconductors I: bulk
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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