Publication Date:
2013-05-31
Description:
Author(s): A. Llopis, J. Lin, S. M. S. Pereira, T. Trinidade, M. A. Martins, I. M. Watson, A. A. Krokhin, and A. Neogi Currently, it is understood that the carrier recombination rate in semiconductors can be modified by metals due to pure electrodynamic interactions through surface plasmons. We propose here an electrostatic mechanism for carrier-metallic nanoparticle interaction comparable in effect to plasmonic int... [Phys. Rev. B 87, 201304] Published Thu May 30, 2013
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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