ISSN:
1432-0630
Keywords:
07.50+f
;
72.80Ey
;
73.60Br
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Free carrier electric microwave absorption is applied to the analysis of ion implanted and epitaxial active layers in GaAs. An improved version of a previously reported waveguide system is described. It allows a quick and nondestructive determination of the sheet resistance, carrier concentration and carrier mobility of active layers. The usefulness of the method for routine electric material characterization supporting a microelectronic device fabrication is demonstrated. Finally, some explorative microwave measurements of heterostructures and photo-induced effects are reported.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00615009
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