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  • 1
    Electronic Resource
    Electronic Resource
    On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 515-518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220 °C for the A center and to 140 °C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(−/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343133
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  • 2
    Electronic Resource
    Electronic Resource
    A new method for measurement of coercive force in bubble garnets using microwave absorption (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 681-684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method has been developed for measurement of coercive force in bubble garnets using microwave absorption. The inflection point was observed in the derivative absorption signal when the measurement was carried out, changing the modulation field in a garnet film supporting magnetic bubbles. This inflection is related to the domain-wall absorption and the modulation field at the inflection point gives the coercive force in the garnet film. Using this method the coercive force can be determined even if the bubbles can hardly be observed. The coercive force of garnet films supporting submicron (0.3–1 μm diam) bubbles has been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338219
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of crystalline zinc sulfide films on a (111)-oriented silicon by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3919-3921 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam epitaxial growth of undoped ZnS layers on Si (111) is reported. Reflection high energy electron diffraction observations of grown films indicated that the optimum growth conditions necessary to obtain good crystallographic quality ZnS films exhibiting surface reconstruction are a substrate temperature of 300 °C and a molecular-beam flux ratio of 1. The layer growth rate depends on both substrate temperature and the molecular-beam flux ratio of Zn to S, JZn/JS. It was found that the growth rate became constant for JZn/JS ratios larger than 1. For the substrate temperatures larger than 400 °C the growth rate was found to decrease to nearly zero, abruptly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336738
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  • 4
    Electronic Resource
    Electronic Resource
    Domain and write–read characteristics for magnetic field modulated magneto-optical disk with high data transfer rate (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 6138-6143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical domain shape and write–read characteristics were investigated in an overwrite scheme using a flying magnetic head. Through domain observation and domain shape numerical simulation on magnetic film, it was found that "tails'' of domains must be shortened to increase the carrier-to-noise ratio (C/N) at high-density conditions. To reduce the length of domain tails, isotherms on the magnetic film must be circular. For quick heat flow, we constructed a quadrilayered disk which has a thin metal film. C/N of the disk was about 50 dB at 7.4 MHz (0.75-μm domain length) with linear velocity 11.3 m/s. Compared with the light power modulation method, the magnetic field modulation method is a more suitable overwrite technique, since the thermal profile is the same for any recording mark length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344460
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  • 5
    Electronic Resource
    Electronic Resource
    Single ion model for magnetostriction in rare-earth–transition-metal amorphous films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3633-3635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of magnetostriction in rare-earth–transition-metal amorphous films was investigated based on a single ion anisotropy model for rare-earth atoms using a point charge approximation. The theory was compared with the observed magnetostriction in (Gd0.75R0.25)19Co81 films with various rare-earth elements R. The dependence of the observed magnetostriction on substitutional rare-earth elements R is well explained with this model. Screening of an electric field was found to be essential for magnetostriction, and a screening function was determined from the observed magnetostriction. The screening was found to be of the type in which an electric field decreases more rapidly with an increase of distance than a Coulombic interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340694
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  • 6
    Electronic Resource
    Electronic Resource
    Numerical simulation of recorded domain shapes on a rotating magneto-optical disk (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3838-3840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For realizing a very high density magneto-optical recording such as a domain-edge recording, the way to control domain shapes and sizes precisely was studied by comparing a numerical simulation with an optical observation of recorded domains on a high-speed rotating disk. The numerical simulation based on a heat flow analysis was applied to a multilayer structure disk. A teardroplike domain shape was analyzed by this simulation, which causes a timing error of edge detection. This shape could be corrected to a symmetrical shape by using a modulated laser pulse. Moreover, it was found that a distance between two domains was affected by a thermal correlation of two laser pulses. This effect is remarkable when the time interval between two pulses is short.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340632
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  • 7
    Electronic Resource
    Electronic Resource
    Iron-related deep levels in n-type silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3923-3927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in iron-doped n-type silicon have been investigated by deep-level transient spectroscopy (DLTS). Three deep levels of Ec−0.29 eV (E1), Ec−0.36 eV (E2), and Ec−0.48 eV (E3) were observed. The concentration of E1 and E2 levels increased during the storage at room temperature. The depth profile of the E3 level concentration indicates the out-diffusion and precipitation of the defects related to the E3 level. In addition, after annealing at 80 °C for 30 min, the E2 and E3 concentrations decreased and then recovered at room temperature. These results suggest that the defects related to these levels are mobile during quenching and storage at room temperature. The temperature dependence of the E3 level concentration shows a formation energy of about 2 eV, which is smaller than that of interstitial iron, and the E3 level concentration is two orders of magnitude lower than the concentration of interstitial iron. The origins of these levels are probably loosely associated iron-related complexes such as iron-acceptor pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343433
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  • 8
    Electronic Resource
    Electronic Resource
    Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3928-3932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect levels in n-type Si Schottky barrier diodes made by resistive evaporation have been investigated by deep level transient spectroscopy. Three defect levels are observed at 0.16, 0.14, and 0.12 eV below the conduction band. The concentrations of the defect levels exponentially decrease into the substrate. The defects are introduced during etching process rather than evaporation process. The concentration of the defects increase with the thickness of the layer removed by etching before Schottky metal deposition, and decrease with the etching rate. This suggests that the defect levels are produced near the surface and are driven into the substrate during etching processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343357
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  • 9
    Electronic Resource
    Electronic Resource
    Study on recorded domain characteristics of magneto-optical TbFeCo disks (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 262-269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Domain characteristics (size and shape) of TbFeCo disks of several compositions are studied systematically through direct optical observation under various recording conditions. The relationships among recorded domains, magnetic properties, and recording conditions are also investigated. Magnetic films suitable for very high-density recording are found to have a compensation temperature between room temperature and 100 °C and a Curie temperature near 200 °C. In those films, the formation of domains is stable against fluctuations in laser power and external field. These results can be explained by a simple domain formation model in which coercive force, demagnetizing field, and wall energy at the domain wall are taken into account. Teardroplike domains are observed in the case of relatively long laser pulse recording. Such domains cause detection errors during the domain edge detection. It is also found that recording noise is high under certain recording conditions. The origin of this noise is supposed to be caused by inversely magnetized regions existing in a domain and irregularities in the outline of domains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341419
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  • 10
    Electronic Resource
    Electronic Resource
    Domain shapes of field modulation recorded TbFeCo and GbTbFeCo magneto-optical disks (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3862-3862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical recording by magnetic field modulation is of particular interest, since direct overwriting of information can be performed as in conventional magnetic recording.1,2 We used a floating magnetic head to apply a modulated magnetic field (±100–±600 Oe) at 5 MHz. We report here the shape of the recorded domains by this technique on TbFeCo and GdTbFeCo 5 1/4 in. disks rotating at 1800 rpm. Both TbFeCo and GdTbFeCo films had a Curie temperature of 200 °C and a compensation temperature of 60 °C. The written domains were observed by a polarized microscope. For TbFeCo disks, regular chevron-type domains were formed according to a cooling tail of a continuous laser beam. However, irregular shape domains were observed in GdTbFeCo disks, that is, the outline of a domain was not smooth, which caused a large recording noise and decreased a signal-to-noise ratio. We discuss the relation between domain regularity and magnetic parameters (anisotropy, wall energy, etc.).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340588
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