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Ultrafast polariton relaxation dynamics in an organic semiconductor microcavity (2011)

T. Virgili, D. Coles, A. M. Adawi, C. Clark, P. Michetti, S. K. Rajendran, D. Brida, D. Polli, G. Cerullo, and D. G. Lidzey

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2011-06-21

Beschreibung: Author(s): T. Virgili, D. Coles, A. M. Adawi, C. Clark, P. Michetti, S. K. Rajendran, D. Brida, D. Polli, G. Cerullo, and D. G. Lidzey We study an organic semiconductor microcavity operating in the strong-coupling regime using fs pump-probe spectroscopy. By probing the induced absorption associated with the one-exciton to two-exciton transition, we are able to characterize the time-dependent population densities of states in the up... [Phys. Rev. B 83, 245309] Published Mon Jun 20, 2011

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

Print ISSN: 1098-0121

Digitale ISSN: 1095-3795

Thema: Physik

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Hole spin precession in a (In,Ga)As quantum dot ensemble: From resonant spin amplification to spin mode locking (2012)

S. Varwig, A. Schwan, D. Barmscheid, C. Müller, A. Greilich, I. A. Yugova, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2012-09-01

Beschreibung: Author(s): S. Varwig, A. Schwan, D. Barmscheid, C. Müller, A. Greilich, I. A. Yugova, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer Coherent collective phenomena of hole spins confined in an ensemble of (In,Ga)As quantum dots are studied by monitoring their Larmor precession about a magnetic field. Variation of the field strength drives the hole spins from a regime of resonant spin amplification, in which their precession freque... [Phys. Rev. B 86, 075321] Published Fri Aug 31, 2012

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Thema: Physik

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3

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Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment (2011)

T. S. Shamirzaev, J. Debus, D. S. Abramkin, D. Dunker, D. R. Yakovlev, D. V. Dmitriev, A. K. Gutakovskii, L. S. Braginsky, K. S. Zhuravlev, and M. Bayer

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2011-10-21

Beschreibung: Author(s): T. S. Shamirzaev, J. Debus, D. S. Abramkin, D. Dunker, D. R. Yakovlev, D. V. Dmitriev, A. K. Gutakovskii, L. S. Braginsky, K. S. Zhuravlev, and M. Bayer [Phys. Rev. B 84, 155318] Published Thu Oct 20, 2011

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

Print ISSN: 1098-0121

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Thema: Physik

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Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities (2013)

C. Edmunds, L. Tang, M. Cervantes, M. Shirazi-HD, J. Shao, A. Grier, A. Valavanis, J. D. Cooper, D. Li, G. Gardner, D. N. Zakharov, Z. Ikonić, D. Indjin, P. Harrison, M. J. Manfra, and O. Malis

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-12-11

Beschreibung: Author(s): C. Edmunds, L. Tang, M. Cervantes, M. Shirazi-HD, J. Shao, A. Grier, A. Valavanis, J. D. Cooper, D. Li, G. Gardner, D. N. Zakharov, Z. Ikonić, D. Indjin, P. Harrison, M. J. Manfra, and O. Malis We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without δ doping. For AlGaN/GaN, we obtained good theor... [Phys. Rev. B 88, 235306] Published Tue Dec 10, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Thema: Physik

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Assignments of transitions in optically-pumped NMR of GaAs/AlGaAs quantum wells on a bulk GaAs substrate (2014)

E. L. Sesti, D. D. Wheeler, S. E. Hayes, D. Saha, G. D. Sanders, and C. J. Stanton

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2014-09-03

Beschreibung: Author(s): E. L. Sesti, D. D. Wheeler, S. E. Hayes, D. Saha, G. D. Sanders, and C. J. Stanton We investigate optically-pumped nuclear magnetic resonance (OPNMR) in GaAs/AlGaAs multiple quantum wells. The photon energy dependence of the 69Ga OPNMR shows a sign change in the signal at the light-hole transition for both σ+ and σ− circular polarized irradiation. The energy for this transition an... [Phys. Rev. B 90, 125301] Published Tue Sep 02, 2014

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures (2012)

A. M. Burke, D. E. J. Waddington, D. J. Carrad, R. W. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, and A. P. Micolich

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2012-10-09

Beschreibung: Author(s): A. M. Burke, D. E. J. Waddington, D. J. Carrad, R. W. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, and A. P. Micolich Gate instability/hysteresis in modulation-doped p -type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n -... [Phys. Rev. B 86, 165309] Published Mon Oct 08, 2012

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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7

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Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures (2013)

D. Q. Wang, J. C. H. Chen, O. Klochan, K. Das Gupta, D. Reuter, A. D. Wieck, D. A. Ritchie, and A. R. Hamilton

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-05-24

Beschreibung: Author(s): D. Q. Wang, J. C. H. Chen, O. Klochan, K. Das Gupta, D. Reuter, A. D. Wieck, D. A. Ritchie, and A. R. Hamilton We present a comparison between experimental and theoretical values of transport τ t and quantum τ q scattering lifetimes in high-quality undoped Al 0.34 Ga 0.66 As/GaAs heterostructures. We obtain excellent agreement between the experimental and modeled scattering times using three scattering processes: ... [Phys. Rev. B 87, 195313] Published Thu May 23, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices (2012)

B. C. Chapler, S. Mack, L. Ju, T. W. Elson, B. W. Boudouris, E. Namdas, J. D. Yuen, A. J. Heeger, N. Samarth, M. Di Ventra, R. A. Segalman, D. D. Awschalom, F. Wang, and D. N. Basov

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2012-10-02

Beschreibung: Author(s): B. C. Chapler, S. Mack, L. Ju, T. W. Elson, B. W. Boudouris, E. Namdas, J. D. Yuen, A. J. Heeger, N. Samarth, M. Di Ventra, R. A. Segalman, D. D. Awschalom, F. Wang, and D. N. Basov We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either x =0.015 Ga 1− x Mn x As or x =3.2×10 −4 Ga 1− x Be x As. The devices are tailored for interrogation of electric field-induced changes to the frequency-dependent conductivity in the accumulation o... [Phys. Rev. B 86, 165302] Published Mon Oct 01, 2012

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Solid Iron Compressed Up to 560 GPa (2013)

Y. Ping, F. Coppari, D. G. Hicks, B. Yaakobi, D. E. Fratanduono, S. Hamel, J. H. Eggert, J. R. Rygg, R. F. Smith, D. C. Swift, D. G. Braun, T. R. Boehly, and G. W. Collins

American Physical Society (APS)

In: Physical Review Letters

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Publikationsdatum: 2013-08-06

Beschreibung: Author(s): Y. Ping, F. Coppari, D. G. Hicks, B. Yaakobi, D. E. Fratanduono, S. Hamel, J. H. Eggert, J. R. Rygg, R. F. Smith, D. C. Swift, D. G. Braun, T. R. Boehly, and G. W. Collins Dynamic compression by multiple shocks is used to compress iron up to 560 GPa (5.6 Mbar), the highest solid-state pressure yet attained for iron in the laboratory. Extended x-ray absorption fine structure (EXAFS) spectroscopy offers simultaneous density, temperature, and local-structure measurements... [Phys. Rev. Lett. 111, 065501] Published Mon Aug 05, 2013

Schlagwort(e): Condensed Matter: Structure, etc.

Print ISSN: 0031-9007

Digitale ISSN: 1079-7114

Thema: Physik

Publiziert von American Physical Society (APS)

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Spontaneous vortices in optically shaped potential profiles in semiconductor microcavities (2013)

K. Guda, M. Sich, D. Sarkar, P. M. Walker, M. Durska, R. A. Bradley, D. M. Whittaker, M. S. Skolnick, E. A. Cerda-Méndez, P. V. Santos, K. Biermann, R. Hey, and D. N. Krizhanovskii

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-02-22

Beschreibung: Author(s): K. Guda, M. Sich, D. Sarkar, P. M. Walker, M. Durska, R. A. Bradley, D. M. Whittaker, M. S. Skolnick, E. A. Cerda-Méndez, P. V. Santos, K. Biermann, R. Hey, and D. N. Krizhanovskii We investigate the spontaneous formation of quantized vortices in microcavity polariton high density phases. Condensates formed in the optical parametric oscillator excitation scheme reveal single vortices in the case of a ring-shaped optical potential or in the presence of natural photonic disorder... [Phys. Rev. B 87, 081309] Published Thu Feb 21, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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