ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (111)
  • 2010-2014  (62)
  • 1995-1999  (49)
Collection
Years
Year
Journal
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4300-4308 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated together with conventional molecular beam epitaxy (MBE) for the growth of CdTe/MnTe superlattices. A systematic structural and magneto-optical study demonstrates that: (i) all Mn atoms incident on the surface get incorporated; however, when a quantity superior or equal to 1 monolayer of Mn is sent onto the surface per ALE cycle, the growth front roughens, leading to the formation of MnTe islands, (ii) optimized atomic layer epitaxy allows us to obtain at 280 °C CdTe/MnTe superlattices with a better control than in conventional MBE, but does not prevent the exchange between Cd and Mn atoms from occurring at the interfaces, (iii) low temperature ALE (200 °C and lower) seems to be a promising way of obtaining more abrupt interfaces. A precise value of the ratio of the elastic coefficients 2c12/c11 is otherwise inferred through this study for zincblende MnTe (1.12). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3035-3041 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic deposition techniques are investigated for binary semiconductors of the telluride family, namely CdTe and MnTe. An original method for directly determining the CdTe atomic layer epitaxy (ALE) growth rate—in monolayers/cycle—is proposed, consisting in monitoring the reflection high-energy electron diffraction (RHEED) sublimation intensity oscillations of an ALE grown CdTe layer deposited on a MgTe buffer layer. The ALE CdTe autoregulated growth rate at 0.5 monolayer/cycle (in the substrate temperature domain between 260 and 290 °C) is accounted for on the basis of an atomic model which relies on the alternating c(2×2) Cd and (2×1) Te surface reconstructions during the ALE cycle. RHEED studies on MnTe atomic deposition, together with x-ray diffraction and transmission electron microscopy on ALE grown CdTe/MnTe superlattices reveal that all deposited Mn atoms are incorporated so that no autoregulated growth can be achieved. Furthermore, less than one or just one monolayer of Mn must be sent on the surface per ALE cycle to obtain well controlled superlattices with abrupt interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6257-6265 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc-blende MgTe lattice parameter, aMgTe=6.420 ±0.005 A(ring), of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x-ray-diffraction and optical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 756-764 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured by high resolution transmission electron microscopy (HRTEM) the width of interfaces in two II–VI heterostructures: CdTe/MnTe and CdTe/MgTe, as a function of the growth mode. A critical review of the different parameters involved in the direct determination of the chemical profile by HRTEM enables us to precisely determine the sensitivity and accuracy of the methods on these particular materials. The measured interface width is of the order of 2.5–3 monolayers (ML) and is compatible with an exchange mechanism involving the monolayer being grown and the last deposited monolayer. Several growth procedures were compared: conventional molecular beam epitaxy and atomic layer epitaxy (ALE). In the case of saturated and oversaturated ALE the inverse MnTe/CdTe interface is no longer planar. A destabilization of the growth front occurs when one or more Mn monolayers per cycle are deposited, through the formation of MnTe islands. Thermal interdiffusion seems to be negligible in the case of Mn. The present HRTEM values for the interface widths extend the results obtained by magneto-optical measurements to higher concentration values and confirm the exchange mechanism. The higher value obtained by x-ray reflectivity (4.7 ML) is explained by the large difference of the average volume on which the measurement is performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1951-1957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed large and small angle x-ray scattering measurements on CdTe/MgTe superlattices. The individual thicknesses of the CdTe and MgTe layers, together with the period dispersion and the crystallographic quality of the stacking, were extracted from large-angle x-ray diffraction. The Fresnel optical method and the distorted wave Born approximation were used to analyze the small angle x-ray scattering data. Specular reflectivity shows that the interface roughness is quite large for the two CdTe/MgTe superlattices grown either by conventional molecular beam epitaxy or by atomic layer epitaxy with however in the latter case a strong asymmetry between the direct and inverted interfaces. The effective MgTe concentration is determined from the refractive index. A model of correlated interface profiles is successfully used to simulate the diffuse scattering, and to gain access to the lateral correlation length of the roughness (Λ(parallel)=1500±750 Å for both samples); moreover, we demonstrate that the layers are almost completely correlated over the sample thickness in the growth direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 845-849 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of inserting Si/Si0.6Ge0.4 strain-balanced superlattices (SLs) into Si0.8Ge0.2 (001) virtual substrates. The SiGe SL layer thickness chosen was larger than the critical thickness for elastic relaxation and generated numerous hemicylindrical features oriented along the 〈100〉 directions. These features lead, when covered by Si0.8Ge0.2, to a disruption of the well-ordered surface crosshatch along the 〈110〉 directions, and to a significant lowering of the surface roughness. There is also evidence for some filtering of the threading dislocations by the SL. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3151-3153 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a self-regulated method for the growth of tilted superlattices. It relies on the reconstructed surfaces alternatively stabilized during the atomic layer epitaxy (ALE) of compound semiconductors. The c(2×2)+(2×1) Cd-stabilized and the (2×1) Te-stabilized surfaces alternatively formed during the ALE of CdTe and CdMn(Mg)Te ensure a self-regulation of the growth at 0.5 monolayer deposited per ALE cycle for both CdTe and CdMn(Mg)Te. We are thus able to overcome the problem of precise flux control inherent to tilted superlattices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1113-1115 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown by atomic layer epitaxy CdTe/MnTe tilted and serpentine superlattices. These heterostructures are formed by depositing in the step-flow growth mode fractional monolayer superlattices (CdTe)m(MnTe)n, with p=m+n∼1, onto 2 °A and 2 °B Cd0.95Zn0.05Te vicinal substrates. Transmission electron microscopy images reveal a good in-plane CdTe/MnTe separation and a uniform short-range superlattice period. The very existence of those superlattices imply that Te-based vicinal surfaces present a regular array of monomolecular steps, with no important step meandering and no step bunching. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 7306-7316 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present high density experimental and theoretical results on CO2–He absorption in the ν3 and 3ν3 infrared bands. Measurements have been made at room temperature for pressures up to 1000 bar in both the central and wing regions of the bands. Computations are based on an impact line-mixing approach in which the relaxation operator is modeled with the energy corrected sudden (ECS) approximation. Comparisons between experimental and calculated results demonstrate the accuracy of the ECS approach when applied to band wings and band centers at moderate densities. On the other hand, small but significant discrepancies appear at very high pressures. They are attributed to a number of reasons which include nonlinear density dependence due to the finite volume of the molecules, neglected contributions of vibration to the relaxation matrix, and incorrect modeling of interbranch mixing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 6467-6478 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A simple approach is developed in order to model the influence of collisions on the shape of infrared absorption by linear molecules. It accounts for line-mixing effects within, as well as between, the different branches (P,Q,R) of the band. It is based on use of the strong collision model, of a classical representation of rotational levels, and of the rigid rotor approximation. The absorption coefficient then has a very simple analytical expression; its wave number and pressure dependencies are computed by using eight parameters which depend on the considered vibrational transition, the temperature, and the nature of the perturber only. These quantities are band-averaged values of the detailed spectroscopic and collisional parameters of the molecular system. Tests of the model are presented in the ν3 and 3ν3 bands of CO2 perturbed by He and Ar at elevated pressures. They demonstrate the accuracy of our approach in accounting for the effects of collisions on the spectral shape in a wide density range; indeed, the superposition of Lorentzian individual lines at low pressure, as well as the collapse (narrowing) of the band at very high pressure are satisfactory predicted. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...