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  • 2010-2014  (28)
  • 1995-1999  (70)
  • 1990-1994  (26)
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  • 1
    Publication Date: 2014-02-19
    Description: Substitutional hydrogen at oxygen site (HO) is well-known to be a robust source of n-type conductivity in ZnO, but a puzzling aspect is that the doping limit by hydrogen is only about 1018 cm−3, even if solubility limit is much higher. Another puzzling aspect of ZnO is persistent photoconductivity, which prevents the wide applications of the ZnO-based thin film transistor. Up to now, there is no satisfactory theory about two puzzles. We report the bistability of HO in ZnO through first-principles electronic structure calculations. We find that as Fermi level is close to conduction bands, the HO can undergo a large lattice relaxation, through which a deep level can be induced, capturing electrons and the deep state can be transformed into shallow donor state by a photon absorption. We suggest that the bistability can give explanations to two puzzling aspects. Scientific Reports 4 doi: 10.1038/srep04124
    Electronic ISSN: 2045-2322
    Topics: Natural Sciences in General
    Published by Springer Nature
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  • 2
    Publication Date: 2011-03-18
    Description: Inelastic light scattering spectroscopy has, since its first discovery, been an indispensable tool in physical science for probing elementary excitations, such as phonons, magnons and plasmons in both bulk and nanoscale materials. In the quantum mechanical picture of inelastic light scattering, incident photons first excite a set of intermediate electronic states, which then generate crystal elementary excitations and radiate energy-shifted photons. The intermediate electronic excitations therefore have a crucial role as quantum pathways in inelastic light scattering, and this is exemplified by resonant Raman scattering and Raman interference. The ability to control these excitation pathways can open up new opportunities to probe, manipulate and utilize inelastic light scattering. Here we achieve excitation pathway control in graphene with electrostatic doping. Our study reveals quantum interference between different Raman pathways in graphene: when some of the pathways are blocked, the one-phonon Raman intensity does not diminish, as commonly expected, but increases dramatically. This discovery sheds new light on the understanding of resonance Raman scattering in graphene. In addition, we demonstrate hot-electron luminescence in graphene as the Fermi energy approaches half the laser excitation energy. This hot luminescence, which is another form of inelastic light scattering, results from excited-state relaxation channels that become available only in heavily doped graphene.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chen, Chi-Fan -- Park, Cheol-Hwan -- Boudouris, Bryan W -- Horng, Jason -- Geng, Baisong -- Girit, Caglar -- Zettl, Alex -- Crommie, Michael F -- Segalman, Rachel A -- Louie, Steven G -- Wang, Feng -- England -- Nature. 2011 Mar 31;471(7340):617-20. doi: 10.1038/nature09866. Epub 2011 Mar 16.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21412234" target="_blank"〉PubMed〈/a〉
    Keywords: Elasticity ; Electrons ; Graphite/*chemistry ; *Light ; Luminescence ; Photons ; *Quantum Theory ; *Scattering, Radiation ; Spectrum Analysis, Raman ; Static Electricity
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 3
    Publication Date: 1996-07-19
    Description: Angle-resolved photoemission experiments reveal evidence of an energy gap in the normal state excitation spectrum of the cuprate superconductor Bi2Sr2CaCu2O8+delta. This gap exists only in underdoped samples and closes around the doping level at which the superconducting transition temperature Tc is a maximum. The momentum dependence and magnitude of the gap closely resemble those of the dx2-y2 gap observed in the superconducting state. This observation is consistent with results from several other experimental techniques, which also indicate the presence of a gap in the normal state. Some possible theoretical explanations for this effect are reviewed.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Loeser -- Shen -- Dessau -- Marshall -- Park -- Fournier -- Kapitulnik -- New York, N.Y. -- Science. 1996 Jul 19;273(5273):325-9.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉A. G. Loeser, Z.-X. Shen, and C. H. Park are in the Department of Applied Physics, Stanford Synchrotron Radiation Laboratory, and Solid State Laboratory, Stanford University, Stanford, CA 94305, USA. D. S. Dessau is with the Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA 94305, USA. D. S. Marshall is with the Solid State Laboratory, Stanford University, Stanford, CA 94305-4055, USA. P. Fournier and A. Kapitulnik are in the Department of Applied Physics, Stanford University, Stanford, CA 94305, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/8662512" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
    Publication Date: 2014-06-24
    Description: Vacancy clusters have been observed in ZnO by positron-annihilation spectroscopy (PAS), but detailed mechanisms are unclear. This is because the clustering happens in non-equilibrium conditions, for which theoretical method has not been well established. Combining first-principles calculation and kinetic Monte Carlo simulation, we determine the roles of non-equilibrium kinetics on the vacancies clustering. We find that clustering starts with the formation of Zn and O vacancy pairs (V Zn  − Vo), which further grow by attracting additional mono-vacancies. At this stage, vacancy diffusivity becomes crucial: due to the larger diffusivity of V Zn compared to V O , more V Zn -abundant clusters are formed than V O -abundant clusters. The large dissociation energy barriers, e.g., over 2.5 eV for (V Zn  − Vo), suggest that, once formed, it is difficult for the clusters to dissociate. By promoting mono-vacancy diffusion, thermal annealing will increase the size of the clusters. As the PAS is insensitive to V O donor defects, our results suggest an interpretation of the experimental data that could not have been made without the in-depth calculations.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 5
    Publication Date: 2013-08-09
    Description: Insulin concentration is critical in culturing human neural stem cells and neurons Cell Death and Disease 4, e766 (August 2013). doi:10.1038/cddis.2013.295 Authors: Y-H Rhee, M Choi, H-S Lee, C-H Park, S-M Kim, S-H Yi, S-M Oh, H-J Cha, M-Y Chang & S-H Lee
    Keywords: human neural stem cellsinsulininsulin resistancecell apoptosisPI3K/Akt intracellular signal
    Electronic ISSN: 2041-4889
    Topics: Biology , Medicine
    Published by Springer Nature
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3953-3959 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt/Co multilayers sputter-deposited in Ar and Xe ambients, and periodic multilayers composed of specific combinations of Pt, Pd, and Co layers, were grown to study the effects of energetic backscattered Ar neutrals on the interface structure. The effects were correlated with the magnetic and magneto-optical properties with emphasis on the perpendicular magnetic anisotropy, K⊥. Films were characterized by high-resolution transmission electron microscopy, x-ray diffraction including grazing incidence geometry, and magnetic circular x-ray dichroism techniques as well as by standard magnetic and magneto-optic methods. It is found that the perpendicular magnetic anisotropy is extremely sensitive to the degree of intermixing, sharp interfaces yielding the largest anisotropy. The three to fourfold difference in K⊥ found between Ar and Xe sputtered films can be directly correlated to the magnitude of the orbital moment contribution 〈LZ〉 in the Co. This orbital contribution is found to be strongly sensitive to the interface sharpness in the films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tertiary crystal growth method was used to fabricate thin gauged 3% Si–Fe sheets in order to reduce the thickness of the sheets without deteriorating soft magnetic properties. During the investigation, the magnetic properties of final annealed sheets were found to be directly related to the magnetic properties of final cold rolled sheets. X-ray and transmission electron microscopy were used to understand the above relation. It was found that the fraction of (110) grains at the surface of the final cold rolled sheets significantly affected the final magnetic properties of the final annealed sheets. On the basis of the above argument, the final magnetic properties of the thin gauged Si–Fe sheets can be predicted by the B10 values of the final cold rolled sheets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6614-6616 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (Co1−xFex)Pt films were grown on a glass substrate by a rf sputtering and then annealed at 650–700 °C in a high vacuum. All the as-sputtered (Co1−xFex)Pt films deposited below 400 °C had a disordered structure and showed very low coercivities. With increasing the deposition temperature and Fe contents, the (111) texture was weakened in as-deposited (Co1−xFex)Pt ternary films. Vibrating sample magnetometer and x-ray diffraction data show that Co atoms in the L10 CoPt phase were substituted with Fe atoms. In-plane coercivities of these films decreased almost linearly with increasing Fe content which seemed to be due to the decrease of a crystalline anisotropy energy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3167-3169 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic structures and binding energies of DX centers for column III and VII impurities in CdTe are determined through first-principles total energy calculations. The ionic displacements leading to DX formation for column VII impurities in II-VI semiconductors are found to be different than those for corresponding column VI impurities in III-V semiconductors. Three distinct types of structures with DX-like properties are found for column VII donors. The relative stability of these structures is impurity and pressure dependent. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2135-2137 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the fatigue and refreshment by dc-electrical field of the electrical properties of Pt/Pb(Ti,Zr)O3/Pt ferroelectric capacitors. We find an asymmetry in the refreshment, that is, the fatigued state can be refreshed by application of negative high dc voltage to the top electrode, but no refreshment is measured by positive dc-voltage application. We also find that the fatigue can be prevented by driving the capacitor asymmetrically. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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