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  • 2010-2014  (151)
  • 2000-2004  (180)
  • 1
    Electronic Resource
    Electronic Resource
    Transmission spectroscopy of photonic crystal based waveguides with resonant cavities (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4791-4794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photonic crystal waveguides including resonant cavities have been fabricated and investigated by transmission spectroscopy. The waveguides consist of two missing rows in a triangular lattice of air holes in a GaAs/AlGaAs slab–waveguide structure. The mirrors of the cavities are formed by adding two rows of holes perpendicular to the guiding direction inside the waveguide. The spectrally broad photoluminescence of an InAs quantum dot layer in the heterostructure is used to probe the transmission. Depending on the resonator size, characteristic resonant peaks are observed in the transmission spectra. Finite difference time domain calculations of the transmission of the investigated structures show good agreement with experimental data. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454199
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  • 2
    Electronic Resource
    Electronic Resource
    Be-enhanced CdSe island formation in CdSe/ZnSe heterostructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7051-7055 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Be-enhanced formation of CdSe quantum dots in CdSe/ZnSe heterostructures grown by migration enhanced epitaxy on (001)GaAs substrates has been investigated using photoluminescence spectroscopy, x-ray techniques (diffraction and reflectometry), and transmission electron microscopy. Coverage of the ZnSe starting surface with a fractional monolayer of beryllium selenide leads to enhanced island formation well below the CdSe thickness of 0.6 monolayer corresponding to the onset of the CdSe-rich island formation in the Be-free structures. The effect of the fractional Be coverage is demonstrated by observation of sharp lines in the photoluminescence signal from patterned mesas with dimensions down to 60 nm, which is due to the emission from individual exciton localization sites attributed to quantum dots. X-ray diffraction and reflectometry measurements on CdSe/ZnSe short-period superlattices with the submonolayer CdSe insertions confirm an enhanced roughening of the CdSe layer morphology in the case of beryllium coverage. Cross-sectional transmission electron microscopy on the SLs with BeSe fractional monolayer exhibits Cd-induced stress modulation along the CdSe sheets with a lateral scale of ∼4 nm, that can also be interpreted in favor of the BeSe-nucleated CdSe-based quantum dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328784
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  • 3
    Electronic Resource
    Electronic Resource
    Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 217-219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of several design parameters on the temperature stability of the emission wavelength of 980 nm GaInAs/(Al)GaAs quantum-dot lasers was studied. The results obtained agree well with a simplified model based on the inhomogeneously broadened transitions of a quantum-dot ensemble. Using this model, the optimum cavity design for a given gain function can be determined. Following this approach, quantum-dot lasers with low wavelength shifts of 0.16 nm/K were realized, which is only half the value of a typical GaInAs/(Al)GaAs quantum well laser. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491612
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced transmission through photonic-crystal-based bent waveguides by bend engineering (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3579-3581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the transmission of light through two-dimensional photonic-crystal-based waveguides with two 60° bends. The waveguides consist of three or five missing rows of holes inside a triangular photonic crystal block fabricated on an AlGaAs/GaAs waveguide structure. Fine tuning of the bend design results in a severe impact on the transmission behavior, leading to losses as low as 1.1 dB/bend. Measurements of losses in the bends were performed by a comparison with a straight guide of identical length. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421087
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of switching effects between the drains of an electron Y-branch switch (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3325-3327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using high-resolution electron beam lithography and wet etching, Y-branched electron waveguides with lengths down to 70 nm have been fabricated on modulation-doped GaAs/AlGaAs heterostructures. Small positive bias applied between the source and the two drain electron reservoirs leads to enhanced switching of electrons into either of the two branches when a lateral external electric field is applied. The switching manifests itself by pronounced sawtooth oscillations in the conductance between source and one branch of an electron Y-branch switch as the gate voltage at the other branch is changed when the corresponding gate voltage is fixed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372341
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  • 6
    Electronic Resource
    Electronic Resource
    Selective thermal interdiffusion using patterned SiO2 masks: An alternative approach to buried CdTe/CdMgTe quantum wires (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2937-2939 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried CdTe/CdMgTe quantum wires with a lateral confinement potential of about 290 meV have been realized. Using electron beam lithography, SiO2 stripes are defined on a single quantum well sample and a subsequent 2 h annealing step in a Zn atmosphere results in a surprisingly strong interdiffusion between Cd and Mg atoms under the capped areas, causing a lateral modulation of the band gap. We obtain, e.g., for a nominal wire width of 100 nm, a lateral subband splitting of more than 8 meV, while the extension of the squared exciton wave function of the ground state is reduced to about 20 nm due to the error function-like potential shape. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360226
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  • 7
    Electronic Resource
    Electronic Resource
    Spectral diffusion of the exciton transition in a single self-organized quantum dot (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1872-1874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on reversible spectral shifts in the emission spectra of self-organized CdSe single quantum dots on a time scale of seconds. Energy shifts of up to 3.5 meV have been observed and can be attributed to the Stark effect caused by fluctuating local electric fields. Most surprisingly, the energy shift turns out to be quasi-periodic with time constants between 70 and 190 s. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126196
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  • 8
    Electronic Resource
    Electronic Resource
    Optical confinement in CdTe-based photonic dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1322-1324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate three-dimensional optical confinement in CdTe-based microcavities. While the vertical confinement is determined by epitaxially grown CdMnTe/CdMgTe Bragg mirrors, the lateral confinement is achieved by defining pillar structures with electron beam lithography and reactive ion etching. The optical confinement is shown by a size-dependent energy splitting between the fundamental and higher photonic modes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452792
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  • 9
    Electronic Resource
    Electronic Resource
    Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4091-4093 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of short-cavity lasers with highly reflective two-dimensional photonic crystal mirrors on an InGaAsP/InP laser structure emitting at 1.57 μm. An intracavity photonic crystal mirror creates two coupled cavities, which provide additional longitudinal mode selection for stable single-mode operation with side-mode suppression ratios exceeding 35 dB. The shortest lasers with l=100 μm overall length have a threshold current of 13 mA and provide more than 4 mW power under continuous wave operation. Longer devices with l=200 μm deliver up to 9 mW. A maximum modulation bandwidth of 7.9 GHz was determined by relative intensity noise measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427158
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  • 10
    Electronic Resource
    Electronic Resource
    Negative differential conductance in planar one-dimensional/zero-dimensional/one-dimensional GaAs/AlGaAs structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3662-3664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using high-resolution electron beam lithography and wet etching, we have fabricated semiconducting islands between quantum wires from GaAs/AlGaAs modulation-doped heterostructures. The zero-dimensional islands were realized by displacing a 180 nm section at the center of a 1 μm long and 180 nm wide straight wire in well-controlled steps perpendicular to the wire direction. The narrow connections between the island and the wires introduce potential barriers. Finite bias voltages applied between the source and the drain of the electron waveguide structures permit to observe negative differential conductance, which is interpreted in terms of resonant tunneling of electrons through the barriers. Furthermore, we observe Coulomb blockade oscillations in the differential conductance of the structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329637
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