ISSN:
1090-6487
Keywords:
61.80.Jh
;
68.55.Jk
;
61.14.Hg
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The evolution of the surface morphology of a pseudomorphic Ge film on Si upon irradiation with its low-energy (230 eV) ions during heteroepitaxy from molecular beam has been studied experimentally by reflection high-energy electron diffraction. It has been found that irradiation with a continuous ion beam leads to a decrease in the critical Ge film thickness at which a transition from two-dimensional layer-by-layer to three-dimensional growth takes place. Exposure to pulsed ion irradiation (0.5 s) at instants of time that correspond to a fractional surface coverage more than 0.5 enhances the reflection intensity, which corresponds to a decrease in the roughness of the growth surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1316815
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