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  • American Institute of Physics (AIP)  (16)
  • American Association for the Advancement of Science (AAAS)  (1)
  • American Chemical Society  (1)
  • 2010-2014  (2)
  • 2000-2004  (4)
  • 1990-1994  (12)
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  • 1
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    Carbon nanotube dispersed conductive network for microbial fuel cells (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-27
    Description: Microbial fuel cells (MFCs) are promising devices for capturing biomass energy. Although they have recently attracted considerable attention, their power densities are too low for practical use. Increasing their electrode surface area is a key factor for improving the performance of MFC. Carbon nanotubes (CNTs), which have excellent electrical conductivity and extremely high specific surface area, are promising materials for electrodes. However, CNTs are insoluble in aqueous solution because of their strong intertube van der Waals interactions, which make practical use of CNTs difficult. In this study, we revealed that CNTs have a strong interaction with Saccharomyces cerevisiae cells. CNTs attach to the cells and are dispersed in a mixture of water and S. cerevisiae , forming a three-dimensional CNT conductive network. Compared with a conventional two-dimensional electrode, such as carbon paper, the three-dimensional conductive network has a much larger surface area. By applying this conductive network to MFCs as an anode electrode, power density is increased to 176  μ W/cm 2 , which is approximately 25-fold higher than that in the case without CNTs addition. Maximum current density is also increased to approximately 8-fold higher. These results suggest that three-dimensional CNT conductive network contributes to improve the performance of MFC by increasing surface area.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Symbiotic bacterium modifies aphid body color (2010)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2010-11-26
    Description: Color variation within populations of the pea aphid influences relative susceptibility to predators and parasites. We have discovered that infection with a facultative endosymbiont of the genus Rickettsiella changes the insects' body color from red to green in natural populations. Approximately 8% of pea aphids collected in Western Europe carried the Rickettsiella infection. The infection increased amounts of blue-green polycyclic quinones, whereas it had less of an effect on yellow-red carotenoid pigments. The effect of the endosymbiont on body color is expected to influence prey-predator interactions, as well as interactions with other endosymbionts.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Tsuchida, Tsutomu -- Koga, Ryuichi -- Horikawa, Mitsuyo -- Tsunoda, Tetsuto -- Maoka, Takashi -- Matsumoto, Shogo -- Simon, Jean-Christophe -- Fukatsu, Takema -- New York, N.Y. -- Science. 2010 Nov 19;330(6007):1102-4. doi: 10.1126/science.1195463.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Molecular Entomology Laboratory, RIKEN Advanced Science Institute, Wako 351-0198, Japan. t-tsuchida@riken.jp〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21097935" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Aphids/*microbiology/physiology ; Carotenoids/metabolism ; Color ; Coxiellaceae/classification/*physiology ; Phylogeny ; *Symbiosis
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
    Electronic Resource
    Electronic Resource
    Monoenergetic positron beam study of Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3880-3885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (tBAs) were investigated using a slow positron beam. The concentration of Ga vacancies, VGa, generated in GaAs epilayers was increased drastically by heavy Si doping of more than 1019 cm−3, where the deactivation of Si occurred. This result suggests that the deactivation of Si in GaAs is mainly caused by a VGa-related defect, such as a VGa-SiGa complex. The VGa concentration in the samples grown using tBAs was found to be almost the same as that grown using arsine (AsH3). On the other hand, the VGa concentration in MOCVD-grown Si-doped GaAs is lower than that in molecular-beam-epitaxy-grown material for the same Si concentrations. The generation mechanisms of VGa were found to be greatly dependent on the growth and/or doping methods, in addition to the Si doping concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352900
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal conversion of semi-insulating GaAs in high-temperature annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 615-618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature annealing of semi-insulating GaAs has been studied. Thermal conversion induced by annealing at 1060–1200 °C can be explained by the causes of both the reduction of EL2 concentration and the generation of deep acceptors during high-temperature annealing. Both of them can be rationalized by the supposition that the antisite defect, AsGa, breaks into AsI and VGa, and the latter is a deep acceptor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353371
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of CuAlSe2 grown by iodine chemical vapor transport (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1648-1655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistivities, carrier concentrations, optical absorption, and photoluminescences of undoped and Cd,Zn-doped CuAlSe2 single crystals grown by chemical vapor transport were studied. The electrical and optical properties were almost unchanged after annealing under Se pressure. However, the resistivity increased about seven orders of magnitude after annealing in vacuum. The resistivity also increased by Cd or Zn doping. The samples showed p-type conduction even when Cd or Zn was doped. An acceptor ionization energy of about 65 meV was obtained. The mobility showed the dominance of lattice scattering for temperatures between 80 and 200 K. Two independent, broad, red luminescences having their own excitation energies were observed at relatively low temperature. We have proposed the configuration coordinate model for this characteristic emission. The emission can be interpreted as radiative transitions from a deep center to the respective A or C valence bands, accompanied by a lattice relaxation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349531
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  • 6
    Electronic Resource
    Electronic Resource
    11B and 10B magic-angle spinning nuclear magnetic resonance studies of cubic boron nitride films prepared by plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1734-1737 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 11B and 10B magic-angle spinning nuclear magnetic resonance (MAS NMR) spectroscopy was conducted to characterize cubic boron nitride films prepared by plasma chemical vapor deposition. Similarities and differences between cubic boron nitride films and polycrystals synthesized at high pressure and high temperature were clarified by chemical shift and linewidth. The same local structure and tetrahedral symmetry of boron atoms in both forms was demonstrated, and a higher defective density appeared to exist in the film form, agreeing well with results from Raman measurements. Noncubic-phase impurities, i.e., amorphous, turbostratic, and hexagonal phases, in films were also detected in 11B MAS NMR spectra, and the possibility of removing these impurities by chemical etching was demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338516
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  • 7
    Electronic Resource
    Electronic Resource
    Heteroepitaxy and characterization of CuGaSe2 layers grown by low-pressure metalorganic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3009-3015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuGaSe2 chalcopyrite compounds were grown heteroepitaxially on both GaAs and GaP substrates by means of the low-pressure metalorganic chemical-vapor deposition method. Optical and structural properties were characterized comprehensively by photoreflectance (PR), photoluminescence (PL), x-ray diffraction, transmission electron microscopy, transmission electron diffraction, and electron-probe microanalysis. The CuGaSe2 epilayers had c(001) surface on GaAs(001) substrates and a(100) surface on GaP(001) substrates, respectively, the results being similar to the case of CuAlSe2. Energies of A, B, and C excitons associated with uppermost valence bands were determined from analysis of PR spectra, and the energies of good-quality epilayers are close to those of the bulk crystal. The slight increase of the crystal-field splitting in the valence bands were discussed in terms of the lattice strain in the epilayer caused by the lattice mismatch. Low-temperature PL spectra exhibited an intense peak at 1.71 eV, the energy being in good agreement with the A-exciton energy. A weak peak due to a free-to-acceptor transition was also observed at 1.66 eV. A broad PL peak at 1.76 eV was observed together with the intense band-edge PL at 1.67 eV, and the peak was assigned to relate to the B-exciton transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357503
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  • 8
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of 2-adamantylamino-5-nitropyridine crystals (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2583-2585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several organic materials with a bulky donor group have been developed for second-order nonlinear optics. Among these materials, 2-adamantylamino-5-nitropyridine (AANP) crystal has the largest second-order nonlinear optical coefficient. By second-harmonics measurement at 1.064 μm, coefficients of d31 and d33 were determined to be 80 and 60 pm/V, respectively. Angle-tuned phase-matched second-harmonic generation with a conversion efficiency=2×10−3 W−1 has been demonstrated using a 1 mm AANP bulk crystal at 1.064 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104829
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  • 9
    Electronic Resource
    Electronic Resource
    Noncritical phase matching for guided-wave frequency conversion (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2294-2296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inhomogeneities in waveguide dimensions are a serious problem for guided-wave frequency conversion devices. We discuss waveguide designs that make the phase matching "noncritical'' with respect to small changes in dimensions. Application of noncritical phase matching results in larger fabrication tolerances, facilitating the practical realization of nonlinear devices with long interaction lengths. We experimentally demonstrate the existence of a noncritical thickness in a lithium niobate waveguide, and analyze the dimensional tolerances for second-harmonic generation in a polymer waveguide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104166
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  • 10
    Electronic Resource
    Electronic Resource
    Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3035-3037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dry surface passivation of GaAs using the combination of H2S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H2S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH4)2Sx treatment in terms of the sulfur coverage ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110250
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