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  • 2010-2014  (311)
  • 2000-2004  (124)
  • 1995-1999  (215)
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  • 1
    Publication Date: 2014-09-08
    Repository Name: EPIC Alfred Wegener Institut
    Type: Conference , notRev
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  • 2
    Publication Date: 2022-05-25
    Description: © The Author(s), 2013. This article is distributed under the terms of the Creative Commons Attribution License. The definitive version was published in Quaternary Science Reviews 76 (2013): 16-28, doi:10.1016/j.quascirev.2013.05.024.
    Description: A proxy system model may be defined as the complete set of forward and mechanistic processes by which the response of a sensor to environmental forcing is recorded and subsequently observed in a material archive. Proxy system modeling complements and sharpens signal interpretations based solely on statistical analyses and transformations; provides the basis for observing network optimization, hypothesis testing, and data-model comparisons for uncertainty estimation; and may be incorporated as weak but mechanistically-plausible constraints into paleoclimatic reconstruction algorithms. Following a review illustrating these applications, we recommend future research pathways, including development of intermediate proxy system models for important sensors, archives, and observations; linking proxy system models to climate system models; hypothesis development and evaluation; more realistic multi-archive, multi-observation network design; examination of proxy system behavior under extreme conditions; and generalized modeling of the total uncertainty in paleoclimate reconstructions derived from paleo-observations.
    Description: MNE and DMT were funded by NOAA/C2D2 grant NA10OAR4310115; SETW gratefully acknowledges support from an American Association of UniversityWomen Dissertation Fellowship. Work cited in this review was supported by NSF grants 0349356, 0724802 and 0902715, NOAA grants NA06OAR4310115 and NA08OAR4310682, and the University of Arizona’s Department of Geosciences and Institute of the Environment.
    Keywords: Forward modeling ; Observational network optimization ; Data-model comparison ; Hypothesis evaluation ; Reconstruction ; Uncertainty modeling
    Repository Name: Woods Hole Open Access Server
    Type: Article
    Format: application/pdf
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 765-770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band gap modification in Ne+-ion implanted In1−xGaxAs/InP (x=0.25, 0.33, 0.40, 0.47, 0.54, 0.61, 0.69) and InAsyP1−y/InP (y=0.32) quantum well structures has been studied by low temperature (12 K) photoluminescence spectra. The maximum usable high temperature anneal for inducing the compositional intermixing using an InP proximity cap is found to be ∼700 °C for 13 s. A second low-temperature (300 °C) anneal, following the high-temperature (700 °C) anneal, is found to induce greater band gap changes than the simple one-step anneal at 700 °C. The changes are found to be approximately proportional to the difference of bandgap energy between the well and the barrier materials; the proportionality coefficient increases with ion dose and reaches a maximum at a dose of ∼2×1013 cm−2. At higher doses, the proportionality coefficient decreases. The band gap changes are explained qualitatively based on the InGaAsP binary composition diagram. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3378-3381 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation into Si-doped InP grown by gas-source molecular beam epitaxy was studied. P-H sites were identified by infrared spectroscopy. Proton-implanted reference samples were used to quantify the infrared results. Approximately 0.1 at. % hydrogen was found to be incorporated into InP:Si. Hall measurements indicated that most of the Si atoms were electrically active as donors. Rapid thermal annealing at 600 °C removed most of the bonded hydrogen from the samples. However, this resulted in relatively little change in either the room-temperature free-carrier concentration or Hall mobility. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5167-5172 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal desorption of ultraviolet-ozone oxide on InP substrates prepared for molecular-beam epitaxy has been performed with overpressures of P2, As2, and As4. Surface analysis using reflection high-energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy and thermodynamic calculations indicate that thermal desorption proceeds via a reaction between the oxide and atomic phosphorus from the substrate to produce volatile phosphorus oxides such as P2O3. The overpressure species serves to stabilize the substrate against surface dissociation once the oxide is removed. In the case of an arsenic overpressure the desorption of the final monolayer of oxide is slowed, relative to the case of phosphorus overpressure, due to the formation of InAs. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3021-3027 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of the group V components in In1−xGaxAsyP1−y, grown lattice matched to InP by gas source molecular beam epitaxy, has been studied over the entire alloy range, 0≤y≤1, as a function of the group V source composition, the V/III beam flux ratio, and the substrate surface orientation. Several aspects of the group V incorporation are most easily understood in terms of a simple model involving a constant incorporation coefficient and an As "underpressure'' condition. An improved description of the results at lower values of the V/III flux ratio is provided by a thermodynamic model based on equilibrium reactions for the formation of the binary constituents, and using the bulk properties of the solid solution. However, the thermodynamic model is quantitatively incorrect for large values of the V/III flux ratio. Furthermore, the results for different surface orientations reveal additional weaknesses in the thermodynamic model and suggest the need to account for the surface bonding configurations in describing the group V incorporation in epitaxial growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5580-5583 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: He+ and N+ ion irradiation of epitaxial p-type In0.76Ga0.24As0.58P0.42 and In0.53Ga0.47As was performed at 300 K to obtain high-resistivity regions. In both the ternary and quaternary samples the resistivity first increases with ion dose. A maximum is reached at a critical dose depending on the ion species and initial doping concentration. Above this dose the conductivity converts to n type and the resistivity steadily decreases to ∼102 Ω cm in InGaAsP and ∼2 Ω cm in InGaAs. After thermal annealing the type converted samples revert to p type. However, for ion doses ≥1013 cm−2 the high resistivities remain stable up to 700 K. The results suggest that simple point defects, rather than complexes are responsible for the changes in the electrical properties of the samples. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3616-3620 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature, polarization-resolved photoluminescence from a (001) surface has been used to investigate InP/InGaAs/InP quantum wells grown by gas source molecular beam epitaxy. The degree of polarization of photoluminescence from a (001) surface, DOP001, is a direct measure of the anisotropy of polarization of luminescence between [110] and [11¯ 0] directions. DOP001 is observed to be strongly dependent on the quantum well thickness, composition (strain), and the gas switching time at the growth-interrupted interface. Results show that the anisotropy of polarization may be due to an effect of an anisotropic strain field that is associated with strained bonds at the interfaces of the quantum well. © 1997 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2358-2360 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/InP layers have been grown under optimized conditions by gas source molecular beam epitaxy on (100) InP substrates patterned with V grooves having (111)A facet sidewalls. Transmission electron microscopy shows that InGaAs/InP quantum wires are obtained with well thickness variation as high as a factor of 6 and that all epilayers are defect-free. Lateral subband separations are estimated by a simple one-dimensional parabolic potential model with the thickness determined by transmission electron microscopy. Photoluminescence from the InGaAs quantum wires is resolved with a selective etching technique. The quantum wire emission has a significant red shift compared to the adjacent quantum wells on the groove sidewalls and the (100) surface region between grooves. The red shift results from both the increased well thickness and compositional change due to adatom diffusion from sidewalls. © 1995 American Institute of Physics.
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for quantifying the degree to which the uneven carrier distribution affects the operation of multiple quantum well (MQW) lasers is developed by comparing the net gains of wells in mirror image asymmetric MQW structures. The uneven carrier distribution is found to affect the performance of devices with as few as two quantum wells and decreases the net gain for wells on the n side of a ten quantum well structure by more than a factor of two. © 1999 American Institute of Physics.
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