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  • Institute of Physics  (18)
  • American Institute of Physics (AIP)  (10)
  • International Union of Crystallography  (4)
  • 2010-2014  (17)
  • 2000-2004  (5)
  • 1995-1999  (10)
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  • 1
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    Carbon nanotube dispersed conductive network for microbial fuel cells (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-27
    Description: Microbial fuel cells (MFCs) are promising devices for capturing biomass energy. Although they have recently attracted considerable attention, their power densities are too low for practical use. Increasing their electrode surface area is a key factor for improving the performance of MFC. Carbon nanotubes (CNTs), which have excellent electrical conductivity and extremely high specific surface area, are promising materials for electrodes. However, CNTs are insoluble in aqueous solution because of their strong intertube van der Waals interactions, which make practical use of CNTs difficult. In this study, we revealed that CNTs have a strong interaction with Saccharomyces cerevisiae cells. CNTs attach to the cells and are dispersed in a mixture of water and S. cerevisiae , forming a three-dimensional CNT conductive network. Compared with a conventional two-dimensional electrode, such as carbon paper, the three-dimensional conductive network has a much larger surface area. By applying this conductive network to MFCs as an anode electrode, power density is increased to 176  μ W/cm 2 , which is approximately 25-fold higher than that in the case without CNTs addition. Maximum current density is also increased to approximately 8-fold higher. These results suggest that three-dimensional CNT conductive network contributes to improve the performance of MFC by increasing surface area.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    11B and 10B magic-angle spinning nuclear magnetic resonance studies of cubic boron nitride films prepared by plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1734-1737 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 11B and 10B magic-angle spinning nuclear magnetic resonance (MAS NMR) spectroscopy was conducted to characterize cubic boron nitride films prepared by plasma chemical vapor deposition. Similarities and differences between cubic boron nitride films and polycrystals synthesized at high pressure and high temperature were clarified by chemical shift and linewidth. The same local structure and tetrahedral symmetry of boron atoms in both forms was demonstrated, and a higher defective density appeared to exist in the film form, agreeing well with results from Raman measurements. Noncubic-phase impurities, i.e., amorphous, turbostratic, and hexagonal phases, in films were also detected in 11B MAS NMR spectra, and the possibility of removing these impurities by chemical etching was demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338516
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  • 3
    Electronic Resource
    Electronic Resource
    Application of 6 MeV/n heavy-ion beams to biophysical experiments (abstract)a) : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1374-1374 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new facility using 6 MeV/n heavy-ion beams is described along with preliminary results of its applications to biophysical investigations. The beams are obtained at the terminal of the injector linac installed in the heavy-ion medical accelerator in Chiba. Various ion species (He–Xe) having different charge states are accelerated to the same velocity, which is suitable for comparing the charge effects of heavy ions. An attempt has been made for investigations of the track structure by using pBR322 plasmid DNA and spores as targets. Newly constructed equipment with the molecular beam source (H2O) placed on this beam line is also described. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146672
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  • 4
    Electronic Resource
    Electronic Resource
    Application of 6 MeV/n heavy-ion beams to biophysical experiments (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2000-2004 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new accelerator facility and two irradiation methods using 6 MeV/n heavy-ion beams are described along with preliminary results concerning their applications to biophysical investigations. The beams are obtained from the injector linac installed at the Heavy Ion Medical Accelerator in Chiba. Various ion species (He–Xe) having different charge states are accelerated to the same velocity, which is suitable for comparing the charge effects of heavy ions in the high linear energy transfer region. An attempt has been made to test the usefulness of the apparatus for studying track structure by using pBR322 plasmid DNA and spores as targets in vacuum. Newly constructed equipment with a molecular-beam source (water vapor) placed on this beam line is also described. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146958
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  • 5
    Electronic Resource
    Electronic Resource
    Laser power dependence of particulate formation on pulse laser deposited films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2029-2036 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density and the size of particulates in films laser-deposited at room temperature using various target materials were observed to depend strongly on the target material and the laser power density. However, loose universal relations between the deposition rates and the particulate density as well as the particulate size were found, where the latter corresponds approximately to the ratio of the laser power density to the ablation threshold. Furthermore, particulates consisting of only some of the target elements such as CuOx were found. Additionally, an acceptably high deposition rate was obtained by using halide and sulfide targets. These materials offer a possibility of deposition using a low power laser. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360179
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence studies in CuAlSe2 epilayers grown by low-pressure metalorganic chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1225-1232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectra were investigated for CuAlSe2 epilayers grown on GaAs(001) substrates by means of low-pressure metalorganic chemical-vapor deposition. PL properties were studied with relation to metalorganic precursors used for the growth. High-quality undoped epilayers exhibited PL peaks related to a free exciton (2.739 eV) and a bound exciton (2.677 eV). The other undoped epilayers exhibited PL bands at 2.3, 2.4, and 2.5 eV originating from donor-acceptor (D-A) pair recombinations. Some of them were found to have a common activation energy for the thermal quenching of 50±10 meV. The PL spectrum changed drastically by impurity doping. Intense green emissions at 2.51 and 2.43 eV were observed in Zn and Mg-doped epilayers, respectively, which were interpreted as D-A pair recombinations based on the dependencies of the PL spectra on excitation intensity, decay time, and temperature. The donor and the acceptor activation energies (ED and EA) were estimated to be 110 and 230 meV, respectively, for the Zn-related D-A pair emission at 2.51 eV. Similarly, ED and EA for CuAlSe2:Mg were estimated to be 140±10 and 270±10 meV, respectively. Furthermore, D-A pair recombinations between 2.3 and 2.5 eV for CuAlSe2:I were studied. CuAlSe2 was proven to be a promising material for short-wavelength visible-light-emitting devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358990
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  • 7
    Electronic Resource
    Electronic Resource
    Preparation and characterization of CuAlxGa1−xSe2 alloy layers grown by low-pressure metalorganic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3338-3345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuAlxGa1−xSe2 alloy layers were successfully grown on GaAs(001) by low-pressure metalorganic vapor phase epitaxy. The distribution coefficient of Al was unity. All alloy layers had their c-axis normal to the substrate plane. Exciton resonance energies were determined as a function of x by means of photoreflectance measurements. A quadratic dependence of exciton energies on x was confirmed. The spin-orbit splittings of the epilayers were approximately the same as that of bulk crystals. The magnitudes of crystal-field splittings were larger than that of bulk crystals, and this was explained in terms of residual tensile biaxial strain in the epilayers. The color of the low-temperature photoluminescence (PL) changed from red to crimson, orange, yellow, green, and bluish-purple with increasing x. A peak due to a free-to-acceptor transition was dominant in the PL spectra of the alloy layers. The acceptor ionization energy increased with increasing x, and the result may reflect an increase of the hole effective mass. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363245
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  • 8
    Electronic Resource
    Electronic Resource
    Diamond synthesis by capacitively coupled radio frequency plasma with the addition of direct current power (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3972-3974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films were synthesized by using radio frequency (RF) power in a capacitively coupled mode with a parallel plate electrode configuration in which direct current (DC) power was also applied simultaneously. This new plasma method is superior to plain DC plasma chemical vapor deposition (CVD) techniques for diamond deposition since it is very stable and seems readily scaleable. Good quality diamond films were synthesized by this modified plasma CVD method. The effect of variation of both RF and DC parameters on the deposited diamond films is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114422
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-μm metal–oxide–semiconductor field-effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 380-382 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Flicker noise measurements for n-metal–oxide–semiconductor field-effect transistors have been carried out under a wide range of bias conditions. The experiments show excess noise over an ideal 1/f noise spectrum at around 1–10 kHz frequency range, which is independent of the drain voltage. The origin of the additional noise is the Shockley–Read–Hall generation–recombination process occurring near the drain in the channel. Monte Carlo device simulations confirmed the excess noise origin as well as the observed reduction of its magnitude with increasing gate voltage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339252
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  • 10
    Electronic Resource
    Electronic Resource
    A Monte Carlo study of the pattern formation during transitions in n-alkane crystals (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 7627-7633 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rotator phase transition in n-alkane was recently found to show a characteristic pattern of preferred growth along the b-axis (shorter axis) of the unit cell. In order to investigate the origin of this anisotropic growth, a pattern formation in n-alkane crystal is studied during the transition between the low temperature orthorhombic (LO) phase and the rotator (R) phase by use of the Monte Carlo method. Of possible factors that will influence the growth pattern, we here concentrate on the mode of chain packing by assuming that the chains have rigid planar zigzag conformation and are placed in a regular orthohexagonal lattice. The herringbone order in the LO phase is found to develop rather quickly resulting characteristic domains with the (100) and (110) boundaries. The domain boundaries run preferentially along the b-axis at lower temperatures and are considered as a stacking fault or antiphase boundary. The transition between the LO phase and the R phase is found to exhibit a characteristic pattern, where the R phase domains grow preferentially along the b-axis. All these behaviors are shown to originate from different energies of the (100) and (110) boundaries. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.481357
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