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  • 1
  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been demonstrated that the linear-chain charge-transfer salt, decamethylferrocenium tetracyanoethanide (DMeFc)(TCNE), is a ferromagnet with a transition temperature of ∼4.8 K. This low-temperature 3D ordering has been attributed to a strong intrachain and a weak interchain interaction. To study these interactions, we have determined the Tc up to 20 kbar by measuring the ac susceptibility χ at low frequency. Our results show that the Tc increases with pressure at a rate of ∼0.22 K/kbar, while the χ peak indicative of the ferromagnetic transition continues to decrease rapidly. A small peak was also detected above the main transition at pressures above 3 kbar. This new peak persists even after the pressure is removed. The result from dc magnetization suggests that this corresponds to a metamagnetic state. For the first time, we have observed pressure-induced phase-transition in this material.
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At the present time, there is a large amount of convergent experimental evidence pointing toward the existence of a vortex-glass state in the high temperature superconductor YBa2Cu3O7−δ in the presence of a high magnetic field, as predicted by Fisher1 and Fisher et al.2 However, the situation at low magnetic field is not so clear. The nature of the vortex state separating the Meissener state at low field and the vortex-glass state at very high field remains unsolved both theoretically and experimentally. To shed some light to this problem, we have measured the remnant magnetic moment relaxation of melt-textured bulk YBa2Cu3O7−δ samples in various magnetic fields from ∼10−4 to ∼300 s. Even at zero field, the time dependence of the relaxation follows the vortex-glass model prediction m(t)∝1/[ln(t)]1/μ but with a μ=1.4±0.2, contradicting the vortex-glass model. As the field is increased, the μ value decreases until it reaches a value of ∼0.2–0.3 above 1 T. The larger than one value of μ seems to point to a collective pinning behavior at low magnetic field.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1528-1530 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous 13CH4/12C2H2 isotopic competition experiments on the mechanism of diamond growth by chemical vapor deposition are reanalyzed in light of recent evidence for a nonlinear dependence of the first-order Raman shift frequency on 13C mole fraction. The new Raman data imply a 13C mole fraction for mixed-isotope diamond films several percent higher than that reported previously. The corrected carbon-13 mole fractions of polycrystalline diamond films and homoepitaxial films grown on (100), (111), and (110) natural diamond substrates were each equal, within experimental error, to that of the methane above the substrate but significantly different from that of gas-phase acetylene. As the 13C mole fractions of methyl radical and methane should be nearly identical, the methyl radical is concluded to be the predominant growth precursor regardless of the crystallographic orientation of the diamond substrate.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5930-5940 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present atomic force microscopy images of diamond films grown by chemical vapor deposition epitaxially on diamond (100), (110), and (111) substrates. The films were grown from 0.2%–1.6% mixtures of CH4 and C2H2 in H2 in a hot-filament reactor at a total pressure of 25 Torr. The substrate and filament temperatures were held at 810–1000 and 2000–2150 °C, respectively. A (100)-oriented diamond film grown with 0.3% CH4 at a substrate temperature of 810 °C was rough on the μm scale, exhibiting pyramidal features, terraces, and penetration twins, while films grown at higher substrate temperatures and hydrocarbon flow rates were smooth on the nm scale and showed evidence of a (2×1) reconstruction. A (110)-oriented film was very rough on the μm scale but nearly atomically smooth on the 0.5–5 nm scale and exhibited local slopes higher than 40° with no evidence of faceting. A film grown on a diamond (111) substrate underwent spontaneous fracture due to tensile stress and exhibited a roughness of ≈10–50 nm on the ≈100 nm lateral scale in regions far away from any cracks. The implications of the morphological features for diamond growth mechanisms are discussed.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6536-6536 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To make true large applications of high temperature superconductors (HTS's), one requires not just a large critical current density (Jc) and high transition temperature (Tc), but also large total current (Ic is the JcA, where A is the cross sectional area) and large total current length (Icl where l is the length) of an HTS which can be further shaped into a usable form, e.g., disk, bar, cylinder, or wire. The large anisotropy, short coherence length, and large penetration depth of HTS's pose serious challenges to efforts to enhance the Jc, Ic, or Icl of HTS's. Melt-texturing technique by slow cooling through the peritectic temperature has proven to be effective in removing large-angle grain boundaries detrimental to Jc in HTS samples of small size; but many problems remain. The short coherence length reduces the pinning potential for magnetic fluxoids and also renders ineffective the nonsuperconducting dispersion in the HTS matrix to enhance pinning through the conventional metallurgical method. Defects of atomic scale acting as pinning centers to raise Jc have been obtained through irradiation by high energy particles and in situ chemical decomposition. However, in most of these studies Jc was determined only by magnetic measurements, not by transport techniques. We have therefore carried out a systematic study on the melt-texturing of HTS's in both bulk and wire forms. We have identified major processing parameters in reducing the microcracks, increasing the dimensions of the bulk HTS, controlling the grain alignment, improving the chemical homogeneity, enhancing the processing rate, and controlling the epitaxial growth of HTS's in an Ag sheath. Effects of irradiation by various types of particles of different energies on Jc determined both by magnetic and transport techniques have also been examined. These results will be presented and discussed, following a brief review on the current status of bulk and wire processing of HTS's.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1695-1705 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of diamond growth by hot-filament chemical vapor deposition (CVD) was investigated on the (100), (111), and (110) crystal faces of natural diamond by competition studies using carbon-13-labeled methane and carbon-12 acetylene. Homoepitaxial growth rates of 0.4, 0.5, and 1.3 μm/h were obtained for growth on the (100), (111), and (110) faces, respectively. The (100)- and (111)-oriented films were smooth initially, while films grown on (110) substrates quickly became rough. The (111) films had graphitic inclusions, as evidenced by the Raman spectrum, while the (100) and (110) films were graphite-free. The (111) films also exhibited substantial tensile stress, as indicated by a shift in the Raman peak and by spontaneous cracking in films grown thicker than 3.5 μm. The carbon-13 mole fraction of mixed 13C/12C diamond films grown on the diamond substrates was determined from the shift of the first-order Raman frequency, after correction for the shift due to stress. The carbon-13 mole fractions of methane, acetylene, and the methyl radical (derived indirectly from the mole fractions of H13C13CH and H12C13CH) in the gas phase were obtained by sampling the gas near the growth surface and subsequently determining its composition by matrix-isolation infrared spectroscopy. The carbon-13 mole fraction of the diamond film was equal to that of the methyl radical but differed significantly from that of acetylene for growth on all three crystal faces, indicating that the methyl radical is the dominant growth precursor under hot-filament CVD conditions regardless of the crystallographic orientation of the diamond substrate.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5871-5873 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure effect on the superconducting transition temperature (dTc/dP) has been measured for Dy1−xPrxBa2Cu3O7−δ with x=0, 0.02, 0.05, 0.1, 0.15, 0.2, and 0.3. Although the Tc suppression by Pr is in a different fashion for Y1−xPrxBa2Cu3O7−δ and Dy1−xPrxBa2Cu3O7−δ, the dTc/dP is similar in these two systems, with respect to x. The measured dTc/dP is positive at small x but becomes negative for x≥0.2 which is associated with the pressure effect on the normal-state resistivity (1/R)(dR/dP). The positive (1/R)(dR/dP) at x≥0.2 indicates that the number of carriers is decreasing under pressure and it supports the picture of hole localization through the hybridization of Pr-4f and O-2p bands. The mechanical pressure has a negative effect on Tc for x≥0.2, but chemical pressure has a positive effect on Tc according to the results of chemical substitution. This suggests that the large R (=rare earth element) may possibly reduce the Pr-O distance, and increase the hybridization of Pr-4f and O-2p bands.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 711-713 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6941-6943 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting transition temperature Tc and its pressure dependence dTc/dP of HgBa2CaCu2O6+δ (Hg-1212) and HgBa2Ca2Cu3O8+δ (Hg-1223) were measured up to 17 kbar. Tc increases with pressure approximately linearly for both compounds before oxidation. However, the nonlinearity in the Tc-P correlation shows up after oxidation in both compounds. For Hg-1212, the average dTc/dP decreases as oxygen doping increases, while it increases in Hg-1223. These observations are in conflict with the modified pressure-induced charge-transfer model, but might be attributed to the possible existence of fine electronic structure. These observations suggest that a Tc much higher than 140 K might be achievable in Hg-1223 by means of higher physical or chemical pressure.
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