ISSN:
1432-0630
Keywords:
61.10.-i
;
78.55.-m
;
72.80.Ey
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract ZnSe films were grown by chemical vapour deposition on GaAs substrates. The influence of the source temperature (between 820 and 900° C) and the substrate temperature (between 620 and 790° C) on the film properties were investigated by Hall measurements, X-ray diffraction, and photoluminescence. With respect to blue luminescent devices the ratio of excitonic to deep level transitions was found to be optimum at low growth rates when the source temperatures were kept below 840° C. P-type conduction up to a net carrier concentration of 8×1018 cm−3 could be obtained by substrate temperatures above 700° C. Lattice contraction versus substrate temperature pointed to a reduced incorporation of donors at higher growth temperatures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324171
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