Publication Date:
2017-12-08
Description:
Sensors, Vol. 17, Pages 2841: Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors Sensors doi: 10.3390/s17122841 Authors: Eric Stevens Jeffrey Clayhold Hung Doan Robert Fabinski Jaroslav Hynecek Stephen Kosman Christopher Parks This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device.
Electronic ISSN:
1424-8220
Topics:
Chemistry and Pharmacology
,
Electrical Engineering, Measurement and Control Technology
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