Publication Date:
2016-03-11
Description:
We established a process for growing highly ordered MoS 2 thin films. The process consists of four steps: MoO 3 thermal evaporation, first annealing, sulfurization, and second annealing. The main feature of this process is that thermally deposited MoO 3 thin films are employed as a precursor for the MoS 2 films. The first deposition step enabled us to achieve precise control of the resulting thickness of the MoS 2 films with high uniformity. The crystalline structures, surface morphologies, and chemical states at each step were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Based on these characterizations and a careful optimization of the growth conditions, we successfully produced a highly oriented MoS 2 thin film with a thickness of five monolayers over an entire one-centimeter-square sapphire substrate.
Electronic ISSN:
2166-532X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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