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  • 1
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    Tuning carrier mobility without spin transport degrading in copper-phthalocyanine (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-07-30
    Description: We demonstrate more than one order of magnitude of carrier mobility tuning for the copper-phthalocyanine (CuPc) without spin transport degrading in organic spin valve devices. Depending on the preparation conditions, organic spin valves with the CuPc film mobility of 5.78 × 10 −3 and 1.11 × 10 −4 cm 2 /V s are obtained for polycrystalline and amorphous CuPc, respectively. Strikingly, the spin diffusion lengths are almost the same regardless of their mobilities that are ∼50 times different, which is in sharp contrast with previous prediction. These findings directly support that the spin relaxation in CuPc is dominated by the spin-orbit coupling.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Experimental study of quasi-2D dipolar vortex streets generated by a moving momentum source in a stratified fluid (2016)
    American Institute of Physics (AIP)
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    Publication Date: 2016-07-12
    Description: Experiments are conducted in a linear stratified fluid with a momentum source modeled via a nozzle jet moving horizontally. The generation mechanism of the quasi-two-dimensional dipolar vortex streets is investigated and their evolution characteristics are analyzed. Observation shows that the formation of a dipolar vortex street requires a nonzero motion of the nozzle in addition to conditions of the Reynolds and Froude number ( Re , Fr ). The ( Re , Fr ) condition that the dipolar vortex streets can be generated is determined via experimental measurements. The explanation for the absence of such a vortex street can be the low energy of the jet and the strong body-effect disturbance of the solid nozzle. The dependence of the vortex street dimensionless formation time τ and the Strouhal number St on the Froude number Fr or the Reynolds number Re is analyzed. This analysis shows that τ and St appear to be independent of Re and approximately have power-law relations with Fr via data fitting. The exponents of Fr in the two power-law functions are −0.27 for τ and −0.21 for St , while the constant coefficients are 65 and 0.21.
    Print ISSN: 1070-6631
    Electronic ISSN: 1089-7666
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    KLL dielectronic recombination resonant strengths of He-like up to O-like tungsten ions (2016)
    American Institute of Physics (AIP)
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    Publication Date: 2016-05-05
    Description: Dielectronic recombination (DR) is an important process in hot plasma physics as well as in atomic structure and collision theory. This work reports the studies of the KLL DR resonance strengths of He-, Li-, Be-, B-, C-, N-, and O-like tungsten ions, through both experiment and calculation. The experimental resonance strengths were determined within uncertainty below 11% at the Shanghai electron beam ion trap by employing a fast electron beam-energy scanning technique. A fully relativistic configuration interaction method implemented in the flexible atomic code was employed to calculate DR process and also radiative recombination (RR). The consideration of the interference effect between DR and RR was revealed to be necessary to determine the resonance strength.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
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    Effect of L12 ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films (2015)
    American Institute of Physics (AIP)
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    Publication Date: 2015-04-29
    Description: Two series of samples of single-layer IrMn and IrMn/FePd bilayer films, deposited on a single-crystal MgO substrate at different IrMn deposition temperatures ( T s  = 300–700 °C), were investigated using magnetron sputtering. L 1 2 ordering was revealed for the 30 nm-thick IrMn epitaxial (001) films with T s  ≥ 400 °C, determined by synchrotron radiation x-ray diffractometry (XRD). XRD results also provide evidence of the epitaxial growth of the IrMn films on MgO substrate. Increasing T s from 400 to 700 °C monotonically increases the ordering parameter of L 1 2 phases from 0.17 to 0.81. An in-plane exchange bias field ( H eb ) of 22 Oe is obtained in a 10 nm-thick FePd film that is deposited on the disordered IrMn films. As the L 1 2 ordering of the IrMn layers increases, the H eb gradually decreases to 0 Oe, meaning that the exchange bias behavior vanishes. The increased surface roughness, revealed by atomic force microscopy, of the epitaxial IrMn layers with increasing T s cannot be the main cause of the decrease in H eb due to the compensated surface spins regardless of the disordered and ordered (001) IrMn layers. The change of antiferromagnetic structure from the A 1 to the L 1 2 phase was correlated with the evolution of H eb .
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    A beam-membrane structure micromachined differential pressure flow sensor a) (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-04-29
    Description: A beam-membrane structure micromachined flow sensor is designed, depending on the principle of differential pressure caused by the mass flow, which is directly proportional to the square flow rate. The FSI (fluid structure interaction) characteristics of the differential pressure flow sensor are investigated via numerical analysis and analog simulation. The working mechanism of the flow sensor is analyzed depending on the FSI results. Then, the flow sensor is fabricated and calibrated. The calibration results show that the beam-membrane structure differential pressure flow sensor achieves ideal static characteristics and works well in the practical applications.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer (2015)
    American Institute of Physics (AIP)
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    Publication Date: 2015-10-13
    Description: This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed to the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Mollusca Tolls with 2 TIR domains (2016)
    Royal Society
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    Publication Date: 2016-06-17
    Description: Toll receptors play an important role in the innate immunity of invertebrates. All reported Tolls have only one Toll/interleukin-1 receptor (TIR) domain at the C-terminal. In this study, numerous Tolls with tandem TIRs at the C-terminal were found in molluscs. Such Tolls presented an extra TIR (TIR-1) compared with Toll-I. Thus, Toll-I might be the ancestor of tandem TIRs containing Toll. To test this hypothesis, 83 Toll-I and Toll-2 (most have two TIRs, but others seem to be the evolutionary intermediates) genes from 29 shellfish species were identified. These Tolls were divided into nine groups based on phylogenetic analyses. A strong correlation between phylogeny and motif composition was found. All Toll proteins contained the TIR-2 domain, whereas the TIR-1 domain only existed in some Toll-2 protein, suggesting that TIR-1 domain insertion may play an important role in Toll protein evolution. Further analyses of functional divergence and adaptive evolution showed that some of the critical sites responsible for functional divergence may have been under positive selection. An additional intragenic recombination played an important role in the evolution of the Toll-I and Toll-2 genes. To investigate the functional difference of Toll-I and Toll-2, over expression of Hcu_Toll-I or Hcu_Toll-2-2 in Drosophila S2 cells was performed. Results showed that Hcu_Toll-2-2 had stronger antimicrobial peptide (AMP) activity than Hcu_Toll-I. Therefore, enhanced AMP-induced activity resulted from tandem TIRs in Toll-2s of molluscs during evolution history.
    Keywords: genetics, immunology, bioinformatics
    Electronic ISSN: 2054-5703
    Topics: Natural Sciences in General
    Published by Royal Society
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  • 8
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    Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-06-16
    Description: Porous SiCOH films are of great interest in semiconductor fabrication due to their low-dielectric constant properties. Post-deposition treatments using ultraviolet (UV) light on organosilicate thin films are required to decompose labile pore generators (porogens) and to ensure optimum network formation to improve the electrical and mechanical properties of low-k dielectrics. The goal of this work is to choose the best vacuum-ultraviolet photon energy in conjunction with vacuum ultraviolet (VUV) photons without the need for heating the dielectric to identify those wavelengths that will have the most beneficial effect on improving the dielectric properties and minimizing damage. VUV irradiation between 8.3 and 8.9 eV was found to increase the hardness and elastic modulus of low-k dielectrics at room temperature. Combined with UV exposures of 6.2 eV, it was found that this “UV/VUV curing” process is improved compared with current UV curing. We show that UV/VUV curing can overcome drawbacks of UV curing and improve the properties of dielectrics more efficiently without the need for high-temperature heating of the dielectric.
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    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 9
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    Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-09-21
    Description: This work reports on InP-based metamorphic quantum well structures with bismuth incorporation for mid-infrared applications. InAs 1-x Bi x quantum well structures have been grown on InP-based metamorphic In 0.83 Al 0.17 As buffers and photoluminescence beyond 3.1  μ m has been achieved at 300 K, which is longer than the referenced InAs quantum well. X-ray diffraction, cross-sectional transmission electron microscopy, and energy dispersive X-ray spectroscopy measurements reveal clear interfaces of InAsBi quantum well with low bismuth, while more defects and bismuth inhomogeneity were observed as more bismuth was incorporated.
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    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum-ultraviolet radiation (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-09-20
    Description: During plasma processing, low-k dielectrics are exposed to high levels of vacuum ultraviolet (VUV) radiation emitted from the plasma. The porous structure of these materials makes them more sensitive to modification because of their low density and consequently deep penetration of active species into the film. Here, we investigate the changes to electrical properties of porous low-k dielectrics as a function of porosity after VUV irradiation. Organosilicate low-k films of porosities between 30% and 50% were exposed to synchrotron VUV radiation at 8 eV with a fluence of approximately 5 × 10 14 photons/cm 2 . Capacitance-voltage measurements showed an increase in the dielectric constant along with a flat-band voltage shift. FTIR results show methyl depletion as well as water uptake after VUV treatment. These show that deterioration of the electrical properties after VUV exposure and the degree of damage are found to be higher for the more porous films.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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