Publication Date:
2017-11-04
Description:
Author(s): M. Kracht, A. Karg, J. Schörmann, M. Weinhold, D. Zink, F. Michel, M. Rohnke, M. Schowalter, B. Gerken, A. Rosenauer, P. J. Klar, J. Janek, and M. Eickhoff Metastable ϵ -gallium oxide is expected to have very good properties for high-power electronics, combining the large band gap and high breakdown field of β -Ga 2 O 3 with a very high spontaneous polarization. Unfortunately, synthesizing ϵ -Ga 2 O 3 is quite tricky, yet the authors have managed it. Introducing tin avoids the formation of volatile suboxides, which leadsto a widened growth window in which ϵ -gallium oxide can beformed. Furthermore, the growth mechanism that the authors revealcould be relevant for the growth of any binary oxide. [Phys. Rev. Applied 8, 054002] Published Fri Nov 03, 2017
Electronic ISSN:
2331-7019
Topics:
Physics
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