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  • American Institute of Physics (AIP)  (2)
  • American Geophysical Union
  • 2015-2019  (2)
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  • 1
    Publication Date: 2016-07-12
    Description: A method is proposed to extract the electrical data for surface doping profiles of semiconductors in unison with the chemical profile acquired by secondary-ion mass spectrometry (SIMS)—a method we call SIMSAR (secondary-ion mass spectrometry and resistivity). The SIMSAR approach utilizes the inherent sputtering process of SIMS, combined with sequential four-point van der Pauw resistivity measurements, to surmise the active doping profile as a function of depth. The technique is demonstrated for the case of ion-implanted arsenic doping profiles in silicon. Complications of the method are identified, explained, and corrections for these are given. While several techniques already exist for chemical dopant profiling and numerous for electrical profiling, since there is no technique which can measure both electrical and chemical profiles in parallel, SIMSAR has significant promise as an extension of the conventional dynamic SIMS technique, particularly for applications in the semiconductor industry.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 2
    Publication Date: 2015-12-25
    Description: Dust grains' potential variation is presented by using a non-equilibrium complex (dusty) plasma following the Vasyliunas Cairns ( VC )-distribution, in which the components such as the electrons, ions [positive and negative], and dust grains have negative charge. For this reason, mathematical statement of currents is solved for dust grains having negatively charge to accomplish the equilibrium state value (viz., q d  = constant) in the presence of VC -distributed plasmas. Indeed, the current balance equations are modified due to the streaming/nonequilibrium distributed negative ions. Numerically, it is assessed that the important plasma variable, for example, spectral index α , spectral index κ , negative ions streaming velocity ( U 0 ), and negative ions number density ( ρ ) , significantly influences the dust grain surface potential ( | ψ d | ) by: (i) increasing the value of spectral index kappa ( κ ) and negative ions density ( ρ ) , the magnitude of dust surface potential ( | ψ d | ) decreases and (ii) increasing the values of spectral index α and negative ions streaming velocity ( U 0 ), dust grains surface potential ( | ψ d | ) increases. The relevance to low-temperature research center in a non-equilibrium dusty (complex) plasma is precisely discussed by associating oxygen ions (negative and positive) species.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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