Publication Date:
2016-02-10
Description:
During dynamic random access memory (DRAM) capacitor scaling, a lot of effort was put searching for new material stacks to overcome the scaling limitations of the current material stack, such as leakage and sufficient capacitance. In this study, very promising results for a SrTiO 3 based capacitor with a record low capacitance equivalent thickness value of 0.2 nm at target leakage current are presented. Due to the material properties of SrTiO 3 films (high vacancy concentration and low band gap), which are leading to an increased leakage current, a physical thickness of at least 8 nm is required at target leakage specifications. However, this physical thickness would not fit into an 18 nm DRAM structure. Therefore, two different new approaches to develop a new ZrO 2 based DRAM capacitor stack by changing the inter-layer material from Al 2 O 3 to SrO and the exchange of the top electrode material from TiN to Pt are presented. A combination of these two approaches leads to a capacitance equivalent thickness value of 0.47 nm. Most importantly, the physical thickness of
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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