Publication Date:
2016-03-05
Description:
Mid-infrared intersubband absorption from p-Ge quantum wells with Si 0.5 Ge 0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μ m wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μ m.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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