Publication Date:
2017-10-11
Description:
Author(s): C. W. Wang, Y. Y. Y. Xia, Z. Tian, J. Jiang, B. H. Li, S. T. Cui, H. F. Yang, A. J. Liang, X. Y. Zhan, G. H. Hong, S. Liu, C. Chen, M. X. Wang, L. X. Yang, Z. Liu, Q. X. Mi, G. Li, J. M. Xue, Z. K. Liu, and Y. L. Chen Monocrystalline SnSe, which is a binary semiconductor, has recently been demonstrated to be a high-performance thermoelectric material with a record-high figure of merit of 2.6 at high temperature (923 K). Using angle-resolved photoemission spectroscopy, the authors probed the full electronic structure of SnSe. They observed three convergent hole bands with small energy differences in their band tops and relatively small in-plane effective masses, in agreement with a b i n i t i o calculations. These bands are critical for the enhancement of the Seebeck coefficient, while preserving the high electrical conductivity of the material. Thus, they represent a key factor contributing to the high figure of merit in SnSe. [Phys. Rev. B 96, 165118] Published Tue Oct 10, 2017
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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