Publication Date:
2016-01-23
Description:
Author(s): D. Errandonea, C. Popescu, A. B. Garg, P. Botella, D. Martinez-García, J. Pellicer-Porres, P. Rodríguez-Hernández, A. Muñoz, V. Cuenca-Gotor, and J. A. Sans A pressure-induced phase transition, associated with an increase of the coordination number of In and Ta, is detected beyond 13 GPa in InTa O 4 by combining synchrotron x-ray diffraction and Raman measurements in a diamond-anvil cell with ab initio calculations. High-pressure optical-absorption measur… [Phys. Rev. B 93, 035204] Published Fri Jan 22, 2016
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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