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  • 1
    Electronic Resource
    Electronic Resource
    Computational complexity and the observation of physical signals (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5314-5319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of computational complexity on the characteristics of a physical signal that is reconstructed from its representation of sampled data are analyzed. It is found that a more complex algorithm does not only require longer time to implement, but also yields an erroneous reconstruction. The reconstruction suffers from contrast degradation, phase shifts, and attenuation of details relative to the true signal. These unwanted effects are caused by the existence of spurious frequencies in the computed spectrum due to rounding-off errors. The amplitude distribution of the spurious frequencies across the spectral bandwidth strongly depends on the number of data points handled and on the complexity of the particular reconstruction algorithm employed. Since the floating point representation of numbers in a computer is always finite, an upper limit exists in the maximum number of additions or multiplications required to compute a quantity reliably without errors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354232
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    Paper (German National Licenses)
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    Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-12-02
    Description: Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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