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  • 1
    Electronic Resource
    Electronic Resource
    Reduction in the series resistance of the distributed Bragg reflector in vertical cavities by using quasi-graded superlattices at the heterointerfaces (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 21-27 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface emitting optical devices with a vertical cavity have been investigated for applications in optical interconnections. To integrate these devices into a two-dimensional array, it is necessary to improve the conversion efficiency from electrical power to optical power. To meet this requirement, the series resistance of the distributed Bragg reflectors that form the vertical cavity must be reduced. This article demonstrates the reduction in the series resistance of the distributed Bragg reflector by introducing quasi-graded superlattices at the heterointerfaces. By using this structure, we obtain a low series resistance distributed Bragg reflector without compromising the high reflectivity. The mechanism of the reduction in the series resistance is studied and it is found that an increase in tunneling current leads to a decrease in the resistance. The dependence of tunneling current on doping concentration of the distributed Bragg reflector and the superlattice structure is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353893
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  • 2
    Electronic Resource
    Electronic Resource
    High resolution laser spectroscopy of the B 1Π–X 1Σ+ transition of 23Na85Rb (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 6229-6237 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High resolution spectrum of the B 1Π–X 1Σ+ transition of the NaRb molecule was measured with the technique of the Doppler-free laser polarization spectroscopy. Molecular constants of the B 1Π(v=0–12) and X 1Σ+(v=0–6) states of 23Na85Rb were determined. The energy levels of the B 1Π state were found to present many irregularities due to perturbations. The resonance fluorescence spectrum following an excitation to a strongly perturbed level was measured. The fluorescence to the (1)3Σ+ state, which consists of discrete lines followed by a continuum band, was observed in addition to the fluorescence lines to rovibrational levels of the X 1Σ+ state. The perturbing state to the B 1Π(v=8,J=15–21) levels is identified as the (1)3Π state by comparing the observed fluorescence spectra with the selection rules for perturbations and radiative transitions. The dissociation limit of the (1)3Σ+ state, which separates into the Na(3s2S1/2)+Rb(5s2S1/2) atoms, was deduced from the spectrum. The dissociation energies of the X 1Σ+, (1)3Σ+, and B 1Π states were determined to be 5030±2, 182±2, and 1319±2 cm−1, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461569
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  • 3
    Electronic Resource
    Electronic Resource
    High resolution laser spectroscopy up to the dissociation limit of the NaK B 1Π state, and predissociation near the dissociation limit (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 7713-7720 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Doppler-free high resolution spectrum of the B 1Π(v',J')–X 1Σ+(v‘,J‘) transitions of 23Na39K was measured by the optical–optical double resonance (OODR) polarization spectroscopy. The transition lines up to the v'=43 level, which was estimated to be 1.8 cm−1 below the dissociation limit, were observed. The potential energy curve for internuclear distance from 3.25 to 15.6 A(ring) was calculated by the RKR method, and the inverse-power coefficient was determined by analyzing the long-range RKR turning points. The B 1Π state dissociates to Na(3s2S1/2)+K(4p2P3/2) atoms without a potential hill near the dissociation limit. The dissociation energy was determined to be 1324.3±0.3 cm−1 from the LeRoy–Bernstein plots. Remarkable line broadenings were observed for transitions higher than the dissociation energy to Na(3s2S1/2)+K(4p2P1/2) atoms. This is identified as originating from the predissociation to Na(3s2S1/2)+K(4p2P1/2) atoms. The predissociation is shown to be caused by a spin–orbit interaction between the B 1Π and (2)3Σ+ states, and the potential curves are expected to cross around the inner turning point of the B 1Π (v'=34) level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460157
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  • 4
    Electronic Resource
    Electronic Resource
    Doppler-free high resolution laser spectroscopy of the Cs2 D 1Σ+u state and the predissociation (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 2600-2607 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A Doppler-free polarization spectrum of the D 1Σ+u(v',J')–X 1Σ+g(v‘,J‘) transition has been observed, and the molecular constants of the D 1Σ+u state were determined. A remarkable variation of the vibrational spacing ΔGv with v', and large deviations of ΔGv from the fitted ΔGv curve for v'(approximately-greater-than)35 were analyzed. The potential curve of the perturbing state, which was identified as the bound (2)3Πu state, was estimated. By using an experimental setup where a collimated cesium beam is crossed at right angles by the laser beam, we measured the excitation spectra by monitoring separately the molecular fluorescence and the D2 or D1 atomic emission. We found that a predissociation of the D 1Σ+u state occurred for v'(approximately-greater-than)20, and the probability of predissociation increased with v'. The measured v' and J' dependence of the linewidth Γ showed a significant increase for v'(approximately-greater-than)25. The predissociation of the D 1Σ+u state is caused by a combination of spin–orbit interaction between the D 1Σ+u(v'J') and (2)3Π0u(e vJ') levels, and the L-uncoupling interaction between the bound (2)3Π0u(e vJ') and dissociative c 3Σ+u(N = J'J') levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460690
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  • 5
    Electronic Resource
    Electronic Resource
    Reconfigurable optical interconnection using a two-dimensional vertical to surface transmission electrophotonic device array (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 540-542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dynamic reconfiguration of optical interconnections for enhanced flexibility in photonic switching systems is realized using a two-dimensional vertical to surface transmission electrophotonic (VSTEP) device array. A matrix operational scheme for the VSTEP array is proposed and demonstrated. Through this operation, functions for light emission and for electrically programmable spatial light modulation are obtained in a single chip of the VSTEP array and a high-speed electronic addressing of 1 ns per one line for the matrix is also confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103641
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  • 6
    Electronic Resource
    Electronic Resource
    Surface-emitting laser operation in vertical-to-surface transmission electrophotonic devices with a vertical cavity (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1250-1252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the first surface-emitting laser operation in a vertical-to-surface transmission electrophotonic device with a vertical cavity. The thyristor-like current-voltage characteristics, which are required for optical and electrical switching, are achieved. Threshold current during the on state is as low as 1.2 mA. All 100 devices, which were randomly extracted from a grown wafer, emit laser light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104326
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  • 7
    Electronic Resource
    Electronic Resource
    High-speed optical sampling measurement of electrical wave form using a scanning tunneling microscope (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3548-3549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical sampling measurement of a high-speed electrical wave form using a scanning tunneling microscope (STM) is demonstrated. An optical pulse train from a laser diode (LD) is used to turn on and off a photoconductive switch on a STM probe to measure a signal from a Schottky barrier diode (SBD) in a sampling procedure. A time resolution less than 300 ps has been achieved. This novel method has the potential to create a breakthrough in ultra-high-speed wave form measurement through this unique combination of optical sampling and STM technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110763
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  • 8
    Electronic Resource
    Electronic Resource
    Cascadable optical switching characteristics in vertical-to-surface transmission electrophotonic devices operated as vertical cavity lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 799-801 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine the optical switching characteristics in vertical cavity surface-emitting laser-type vertical-to-surface transmission electrophotonic devices (VC-VSTEPs) with a pnpn structure. It is theoretically and experimentally demonstrated that both optical input/output characteristics are strongly influenced by the structure of the vertical cavity. With improvements in optical power output due to laser oscillation, optical switching speed is enhanced by two orders of magnitude compared to spontaneous emission-type VSTEPs. A 20-μm-square VSTEP with an optimized vertical cavity structure demonstrates a low optical switching energy of 2.2 pJ with a switching time of 10 ns, as low as spontaneous emission-type VSTEPs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106522
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  • 9
    Electronic Resource
    Electronic Resource
    Light detection sensitivity of a vertical cavity structure used in an optical switch device (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1020-1022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light detection characteristics in a vertical cavity surface-emitting laser-type vertical-to-surface transmission electrophotonic device (VC-VSTEP) have been evaluated. To realize a low energy optical interconnection, not only the switching threshold energy but also the light detection sensitivity must be optimized. Maximum sensitivity is achieved when the input light wavelength and the field distribution coincide with fundamental cavity mode characteristics. Under the best matching condition, the input light energy necessary to switch the VC-VSTEP state is easily lower than 1 pJ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109821
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  • 10
    Electronic Resource
    Electronic Resource
    Optical–optical double resonance polarization spectroscopy of highly excited states of 23Na39K (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 63-69 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Doppler-free high resolution spectrum of the transitions to highly excited states of the 23Na39K molecule was measured by using the technique of the optical–optical double resonance polarization spectroscopy. Several highly excited states 1Σ+, 1Π, and 1Δ were found, and the molecular constants for these states were determined. The vibrational numbering of the 1Δ state (G 1Δ state) was estimated, and the potential energy curve was calculated by the Rydberg–Klein–Rees method. Many perturbed lines were observed. The indirect perturbation between 1Σ+ and 1Δ levels through the L-uncoupling interaction with a distant 1Π state was identified. The hyperfine splittings were observed in transition lines to a 3Π state, which is perturbed by a 1Σ+ state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466927
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