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  • 1
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    PTP{sigma} as a coreceptor for glypicans [Neuroscience] (2015)
    National Academy of Sciences
    Details
    Publication Date: 2015-02-11
    Description: Leukocyte common antigen-related receptor protein tyrosine phosphatases—comprising LAR, PTPδ, and PTPσ—are synaptic adhesion molecules that organize synapse development. Here, we identify glypican 4 (GPC-4) as a ligand for PTPσ. GPC-4 showed strong (nanomolar) affinity and heparan sulfate (HS)-dependent interaction with the Ig domains of PTPσ. PTPσ bound only to proteolytically...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 2
    Electronic Resource
    Electronic Resource
    Conductivity and ion density of a plasma channel induced by a mildly relativistic electron beam from a gas-filled diode (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 1514-1521 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity and ion density of a plasma channel induced by a mildly relativistic electron beam (300 kV, ∼2 kA, 10–50 ns) have been experimentally investigated under various gas pressures. Pressures of filling gas (air) in this experiment ranged from 10 mTorr to 100 mTorr. The net currents of the beam-induced plasma channel were measured by four Rogowski coils located along the propagating region, while the electron beam currents were measured by a Faraday cup. The inductive plasma currents observed at the above pressure regimes have been characterized by magnetic decay time. Plasma-channel conductivity and ion density induced by the beam are measured along the propagating axial positions under various gas pressures. The numerical result of the ion density is also obtained at the charge neutralization time when the ion density is just the same as the electron beam density, and the digitizing experimental data of the beam current Ib(t) and voltage Vd(t) have been used. As expected, in both numerical and experimental results the ion density increases to a peak value of about 3.0×1011 cm−3 and 3.3×1011 cm−3, respectively, at 50 mTorr and slowly decreases for both cases as the gas pressure increases from 50 mTorr to 100 mTorr. Moreover, the results of ion density predicted by the theoretical model developed here are also found to be in remarkably good agreement with experimental and numerical results at pressure regimes from 10 mTorr to 100 mTorr. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872824
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  • 3
    Electronic Resource
    Electronic Resource
    Technique for integration of vertical cavity lasers and resonant photodetectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1-3 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a design that allows fabrication of substrate input/output resonant-cavity photodetectors and vertical cavity lasers (VCLs) on the same substrate without regrowth. By selectively oxidizing a few layers in the bottom mirror the as-grown 80% reflectivity mirror, used as the input mirror for the detector, is converted to a 99.3% reflectivity mirror allowing fabrication of VCLs from the same epitaxial material. Since these two reflectivities are uncorrelated, the detectors and VCLs can be individually designed. Despite the change in refractive index from ∼3 to ∼1.6 in the oxidized layers, the structure can be designed to have nearly the same resonance wavelength for both the detectors and VCLs. Using this design strategy, we have successfully fabricated high-performance resonant photodetectors and VCLs from the same epitaxial material. The photodetectors have an absorption of 56% and an optical bandwidth of 5.9 nm, in good agreement with theory. Small diameter, single-mode VCLs have threshold currents as low as 180 μA with 33% slope efficiencies while multimode devices have slope efficiencies exceeding 60% with less than 500 μA threshold currents. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122951
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  • 4
    Electronic Resource
    Electronic Resource
    Multiple-wavelength vertical-cavity laser arrays based on postgrowth lateral-vertical oxidation of AlGaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 282-284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that combined lateral-vertical oxidation of AlGaAs can be used to change the resonant wavelength of an optical cavity after the single epitaxial growth. A multiple-wavelength array of vertical-cavity surface-emitting lasers with a 48 nm wavelength span has been realized using this technique. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121795
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  • 5
    Electronic Resource
    Electronic Resource
    Resonant-cavity InGaAs/InAlGaAs/InP photodetector arrays for wavelength demultiplexing applications (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2347-2349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant-cavity photodetector arrays are demonstrated in the InGaAs/InAlAs/InP material system grown by solid-source molecular beam epitaxy. To reduce crosstalk between channels, these devices are designed with a high-Q cavity to obtain narrow-band photoresponse. In addition, a novel double-absorber design has been proposed and implemented to avoid position sensitivity related to the cavity standing wave and eliminate the need for in situ cavity-mode adjustment. Both Schottky and P-i-N diode structures are studied and compared. Eight element arrays with linearly distributed resonant wavelengths spanning over 30 nm are fabricated by using a three-level anodic oxidation process. An experimental channel rejection ratio of 14.5 dB at 4 nm away from the resonant peak has been achieved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118870
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  • 6
    Electronic Resource
    Electronic Resource
    Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3271-3272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ballistic electron emission spectroscopy (BEES) has been used to determine the conduction-band offset between a 10-nm-thick Al0.12In0.22Ga0.66As (Q) strained layer and a ternary Al0.2Ga0.8As (T) barrier located beneath the surface. A three-sample process was used so that the known, reproducible Au/GaAs Schottky barrier would be the top layer of all measured structures. BEES thresholds obtained for Au/GaAs, Au/GaAs/Q, and Au/GaAs/Q/T were 0.96±0.02, 0.98±0.04, and 1.08±0.04 meV yielding offsets of ∼20 meV for GaAs/Q and ∼100 meV for Q/T. Under the affect of a high-temperature anneal, the Q/T offset was reduced to ∼40 meV. In addition, a structure employing solely Au/GaAs/AlGaAs was used to study transitivity for the Q/T material system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122741
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  • 7
    Electronic Resource
    Electronic Resource
    Vacuum field induced mixing of light and heavy-hole excitons in a semiconductor microcavity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3465-3467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements in a semiconductor microcavity reveal the coupling between light- and heavy-hole excitons that is mediated by the electromagnetic vacuum. Three polariton modes constructed from superpositions of heavy-hole excitons, light-hole excitons, and photons are observed. The experimental results are in good agreement with the theory of three-coupled bosonic modes, each coupled to an independent reservoir. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117253
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  • 8
    Electronic Resource
    Electronic Resource
    ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 615-618 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.264-268.615.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    A class of finite element methods based on orthonormal, compactly supported wavelets (1995)
    Springer
    Computational mechanics 16 (1995), S. 235-244 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract This paper develops a class of finite elements for compactly supported, shift-invariant functions that satisfy a dyadic refinement equation. Commonly referred to as wavelets, these basis functions have been shown to be remarkably well-suited for integral operator compression, but somewhat more difficult to employ for the representation of arbitrary boundary conditions in the solution of partial differential equations. The current paper extends recent results for treating periodized partial differential equations on unbounded domains in R n, and enables the solution of Neumann and Dirichlet variational boundary value problems on a class of bounded domains. Tensor product, wavelet-based finite elements are constructed. The construction of the wavelet-based finite elements is achieved by employing the solution of an algebraic eigenvalue problem derived from the dyadic refinement equation characterizing the wavelet, from normalization conditions arising from moment equations satisfied by the wavelet, and from dyadic refinement relations satisfied by the elemental domain. The resulting finite elements can be viewed as generalizations of the connection coefficients employed in the wavelet expansion of periodic differential operators. While the construction carried out in this paper considers only the orthonormal wavelet system derived by Daubechies, the technique is equally applicable for the generation of tensor product elements derived from Coifman wavelets, or any other orthonormal compactly supported wavelet system with polynomial reproducing properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00369868
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  • 10
    Electronic Resource
    Electronic Resource
    A class of finite element methods based on orthonormal, compactly supported wavelets (1995)
    Springer
    Computational mechanics 16 (1995), S. 235-244 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  This paper develops a class of finite elements for compactly supported, shift-invariant functions that satisfy a dyadic refinement equation. Commonly referred to as wavelets, these basis functions have been shown to be remarkably well-suited for integral operator compression, but somewhat more difficult to employ for the representation of arbitrary boundary conditions in the solution of partial differential equations. The current paper extends recent results for treating periodized partial differential equations on unbounded domains in R n , and enables the solution of Neumann and Dirichlet variational boundary value problems on a class of bounded domains. Tensor product, wavelet-based finite elements are constructed. The construction of the wavelet-based finite elements is achieved by employing the solution of an algebraic eigenvalue problem derived from the dyadic refinement equation characterizing the wavelet, from normalization conditions arising from moment equations satisfied by the wavelet, and from dyadic refinement relations satisfied by the elemental domain. The resulting finite elements can be viewed as generalizations of the connection coefficients employed in the wavelet expansion of periodic differential operators. While the construction carried out in this paper considers only the orthonormal wavelet system derived by Daubechies, the technique is equally applicable for the generation of tensor product elements derived from Coifman wavelets, or any other orthonormal compactly supported wavelet system with polynomial reproducing properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00369868
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