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  • 2015-2019  (567)
  • 1995-1999  (36)
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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 276-280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical results of rf sputtered hydrogenated amorphous silicon carbide (a-Si1−xCx:H) films prepared under different sputtering conditions are presented. It was found that hopping and Poole–Frenkel effects are the conduction mechanisms for low and high applied fields, respectively. From the capacitance versus voltage measurements, the fixed charge density (Qf) and the interface trapped charge density (Dit) were found to be in the range of 5.5–6.81×1010 cm−2 and 5–13×1011 eV−1 cm−2, respectively. Dit decreases with either an increase in the total sputtering pressure, the partial hydrogen pressure, or the substrate temperature, but increases with an increase in the rf sputtering power. The decrease in Dit was found to be closely related to the increase in the number of silicon–hydrogen bonds. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363845
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  • 2
    Electronic Resource
    Electronic Resource
    Textured diamond films growth on (100) silicon via electron-assisted hot filament chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1965-1967 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Textured (100) diamond films are successfully grown on single-crystalline (100) silicon substrate by electron assisted hot filament chemical vapor deposition from a gas mixture of methane and hydrogen. The effects of various parameters have been studied. The optimal growth conditions are obtained and the oriental growth character is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118793
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  • 3
    Electronic Resource
    Electronic Resource
    Degradation of oxynitride gate dielectric reliability due to boron diffusion (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on the impact of the suppression of boron diffusion via nitridation of SiO2 on gate oxide integrity and device reliability. SiO2 subjected to rapid thermal nitridation in pure nitric oxide (NO) is used to fabricate thin oxynitride gate dielectrics. Both n+ polycrystalline silicon (polysilicon) gated n-MOS (metal–oxide semiconductor) and p+-polysilicon gated p-MOS devices were subjected to anneals of different times to study the effect of dopant diffusion on gate oxide integrity. As expected, an advanced oxynitride gate dielectric will effectively alleviate the boron-penetration-induced flatband voltage instability in p+-polysilicon gated p-MOS capacitors due to the superior diffusion barrier properties. However, such improvements are observed in conjunction with some degradation of the oxide reliability due to the boron-blocking/accumulation inside the gate dielectric. Results show that even though the oxide quality is slightly degraded for NO-nitrided SiO2 with p+-polysilicon gates, p-MOSFETs (metal–oxide semiconductor field effect transistors) with these dielectrics still show improved interface stability as compared to conventional SiO2 due to the reduced boron penetration into the Si/SiO2 interface and underlying channel region. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115595
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  • 4
    Electronic Resource
    Electronic Resource
    Highly reliable chemical vapor deposited stacked oxynitride gate dielectrics fabricated by in situ rapid thermal multiprocessing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2666-2668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality chemical vapor deposited (CVD) stacked oxynitride gate dielectrics have been fabricated by in situ rapid thermal multiprocessing. Bottom thin oxynitrides were formed by rapid thermal processing (RTP) of Si in nitric oxide (NO) or nitrous oxide (N2O) ambient, followed by rapid thermal chemical vapor deposition (RTCVD) of SiO2 films using SiH4 and N2O. The stacked dielectrics were then subjected to in situ rapid thermal annealing in an O2 ambient. Results show that CVD stacked oxynitride gate dielectrics have improved endurance to interface state degradation, higher charge to breakdown values, and significantly reduced defect densities compared to control thermal gate oxide. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116275
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of chemical composition on the electrical properties of NO-nitrided SiO2 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1225-1227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact of nitrogen (N) concentration and distribution on the electrical and reliability properties of rapid-thermally NO-annealed oxides is studied. The use of NO-annealing of thermally grown SiO2 provides an excellent way to isolate the effects of N, since this method allows for the incorporation of varying N profiles in the oxide without a simultaneous increase in dielectric thickness. Results show that the electrical properties of the dielectric under gate and substrate Fowler–Nordheim injection are highly sensitive to the N profile in the dielectric. While interface endurance (ΔDit) is seen to improve monotonically with increasing N concentrations for both +Vg and −Vg, the same is not observed for charge-to-breakdown (QBD) properties. It is found that although QBD improves with NO nitridation under +Vg, it shows a turnaround behavior under −Vg, i.e., for a 10-s NO-annealed oxide the QBD value is improved over control oxide while further nitridation is seen to degrade QBD under −Vg. The presence of bulk N and the nonuniform N distribution in the dielectric is responsible for this behavior. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113244
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  • 6
    Electronic Resource
    Electronic Resource
    Noise characteristics of radio frequency sputtered amorphous silicon carbide films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5057-5059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noise measurements of radio frequency sputtered hydrogenated (a-SiC:H) and unhydrogenated (a-SiC) amorphous silicon carbide films have been carried out. Two Lorenztian components were found in the noise spectra of the a-SiC:H and a-SiC films. Discrete traps, created by the sputtering process, were suggested to be responsible for the Lorenztian spectra observed. As only a relatively small amount of hydrogenation was achieved in our a-SiC:H films, passivation of the discrete traps was therefore not significant. This accounts for the Lorenztian spectra of the a-SiC:H films. We propose that furnace annealing has reduced the discrete traps substantially so that only the 1/f noise was observed in the annealed samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368798
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  • 7
    Electronic Resource
    Electronic Resource
    Stability of Metabolically Conjugated Precursors of Meat and Milk Flavor Compounds in Various Solvents (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 60 (1995), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: The stability of selected metabolic conjugates (phenylglucuronide, phenylphosphate, and naphthylsulfate) was determined in model systems composed of water and various ratios (3:1, 1:1, 1:3) of selected solvents (hexane, chloroform, ethyl acetate, diethyl ether, or methanol) held at either 22°C or 40°C for 30 min under various pH conditions (pH 1.5, 3.2, or 6.5). Notable hydrolysis occurred only for the more polar solvents held in contact with acidic aqueous phases. Conditions were identified for minimizing hydrolysis of conjugates during extraction of fat and free alkylphenols from milk and meat products with diethyl ether. They were pH near neutral, short exposure time, near ambient temperature, presence of excess water, and saturation of aqueous phase with sodium chloride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1995.tb06301.x
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  • 8
    Electronic Resource
    Electronic Resource
    Numerical bifurcation analysis of distance-dependent on-center off-surround shunting neural networks (1996)
    Springer
    Biological cybernetics 75 (1996), S. 495-507 
    Details
    ISSN: 1432-0770
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Computer Science , Physics
    Notes: Abstract.  On-center off-surround shunting neural networks are often applied as models for content-addressable memory (CAM), the equilibria being the stored memories. One important demand of biological plausible CAMs is that they function under a broad range of parameters, since several parameters vary due to postnatal maturation or learning. Ellias, Cohen and Grossberg have put much effort into showing the stability properties of several configurations of on-center off-surround shunting neural networks. In this article we present numerical bifurcation analysis of distance-dependent on-center off-surround shunting neural networks with fixed external input. We varied four parameters that may be subject to postnatal maturation: the range of both excitatory and inhibitory connections and the strength of both inhibitory and excitatory connections. These analyses show that fold bifurcations occur in the equilibrium behavior of the network by variation of all four parameters. The most important result is that the number of activation peaks in the equilibrium behavior varies from one to many if the range of inhibitory connections is decreased. Moreover, under a broad range of the parameters the stability of the network is maintained. The examined network is implemented in an ART network, Exact ART, where it functions as the classification layer F2. The stability of the ART network with the F2-field in different dynamic regimes is maintained and the behavior is functional in Exact ART. Through a bifurcation the learning behavior of Exact ART may even change from forming local representations to forming distributed representations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004220050314
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  • 9
    Electronic Resource
    Electronic Resource
    Degenerate four-wave mixing based on excited-state absorption in azo-dye-doped polymer films (1996)
    Springer
    Applied physics 62 (1996), S. 299-302 
    Details
    ISSN: 1432-0649
    Keywords: 42.30 ; 42.65 ; 42.70 ; 42.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Degenerate Four-Wave Mixing (DFWM) based on excited-state absorption in azo-dye doped polymer films is firstly reported. Under a pre-exciting argon laser at 514.5 nm, DFWM is performed using a 632.8 nm HeNe laser which is absorbed only slightly when the molecules are in the ground state. The dynamic behavior of the DFWM signal due to excited-state absorption is also treated theoretically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01080959
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  • 10
    Electronic Resource
    Electronic Resource
    Vibrational spectrum of uridine obtained by means of nonresonant-background-free CARS spectroscopy (1997)
    Springer
    Applied physics 65 (1997), S. 399-402 
    Details
    ISSN: 1432-0649
    Keywords: PACS: 33; 36; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003400050287
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