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  • Articles  (126)
  • American Institute of Physics (AIP)  (126)
  • 2015-2019  (35)
  • 1995-1999  (91)
  • 1975-1979
  • 1
    Electronic Resource
    Electronic Resource
    Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2278-2280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of stress on solid-phase crystallization of amorphous silicon (a-Si) were studied by laser Raman spectroscopy. Compressive stress was introduced in a-Si with a Si3N4 cap. The speed of crystallization decreased with the increase of the stress while it increased again with an additional cap of SiO2 on a Si3N4 cap. A SiO2 cap introduced tensile stress in an a-Si film and relaxed compressive stress by a Si3N4 cap. The reason why crystallization of a-Si is suppressed is that the stress is elastic and that it does not relax with crystallization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371042
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  • 2
    Electronic Resource
    Electronic Resource
    High-power operation of a 170 GHz megawatt gyrotron : The 38th annual meeting of the Division of Plasma Physics (DPP) of the American Physical Society (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1907-1914 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent gyrotron oscillator experiments have achieved record powers at 170 GHz. Single mode emission with a peak output power of 1.5 MW and an efficiency of 35% has been measured. The experiment is based on a resonant TE28,8,1 cylindrical cavity situated in a 6.7 T magnetic field. Microwaves are generated in the cavity by an 83 kV annular electron beam produced by a triode-type magnetron injection gun that is capable of currents up to 50 A. Megawatt power levels with efficiencies between 30%–36% have been measured over a wide range of operating parameters for the TE28,8,1 mode. Similar results were also achieved in the neighboring TE27,8,1 mode at 166.6 GHz, and the TE29,8,1 mode at 173.5 GHz. The high output power is the result of a carefully designed electron gun with low perpendicular velocity spread (6%–10%) and a novel cavity with an output iris that is less prone to mode competition. These results are in good agreement with nonlinear multimode simulations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872334
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  • 3
    Electronic Resource
    Electronic Resource
    Recent results from high performance and steady-state researches in the Japan Atomic Energy Research Institute Tokamak-60 Upgrade (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1943-1950 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High IP hot ion high confinement (H) mode at IP up to 4.5 MA has been exploited. Sawtooth stabilization by ion cyclotron range of frequencies (ICRF) heating is effective to improve performance in this regime. The performance is limited by the onset of giant edge localized modes (ELMs). It was found that the edge pressure gradient at the onset of ELMs can be increased with increasing triangularity δ up to 0.4 at IP〈1.2 MA. The normalized beta (βN) value at the ELM onset also increases from ∼1 to ∼2.8 when δ is increased from ∼0.1 to ∼0.33, respectively. In the reversed-shear operation, an internal transport barrier (ITB) appears, not only for the ions but also for the electrons. The improved confinement region is quite large (within r/a∼0.65). The highest confinement enhancement factor (H factor) and βN achieved so far are, respectively, 2.6 and 2.4 for reversed-shear plasmas. A scaling law of the H-mode threshold power, which is consistent with the International Thermonuclear Experimental Reactor (ITER) [Y. Shimomura, Phys. Plasmas 1, 1612 (1994)] scaling, is derived. The power threshold for ITB formation in the high βp mode depends on the electron density, but not on the toroidal field. It is validated that the control of the toroidal rotation is effective to control toroidicity-induced Alfvén eigenmodes (TAE modes). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871990
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  • 4
    Electronic Resource
    Electronic Resource
    Radial profile of diffusion-controlled He positive columns (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 4659-4661 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radial profile of electron temperature deduced from the measured electron energy distribution function (EEDF) is investigated in an axially homogeneous He positive column and compared with a theoretical one calculated from the electron energy balance equation. The radial shift of the measured EEDF can be explained by the effect of the ambipolar potential. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870958
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  • 5
    Electronic Resource
    Electronic Resource
    Nonlocal particle loss effects on the electron kinetics in a direct current helium diffusion-controlled positive column (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1160-1165 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron energy distribution function (EEDF) in a positive column of low-pressure and discharge current is determined not only by the local collision processes and the axial electric field action, but also by the transport phenomenon, the radial ambipolar diffusion due to the gradient of plasma density. Thus, to completely determine the EEDF, the Boltzmann equation including radial inhomogeneity terms has to be solved. The present work proposes a simplified method to account for the radial inhomogeneity, when the electron kinetics in the central part of the positive column can be reduced to be one energy-dimensional. The radial diffusion of electrons is taken into account via a wall loss term. A greatly simplified kinetic equation is obtained and its numerical solutions agree well with the EEDF determined from Langmuir probe measurements in a helium dc discharge positive column. Also, a comparison of the present method with local and nonlocal approach theories is made. A discrepancy is observed, especially at high energies, where either local or nonlocal approach theories predict too-large values of EEDF. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872203
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  • 6
    Electronic Resource
    Electronic Resource
    Field emission from phosphorus-doped polycrystalline diamond films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4635-4642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission characteristics have been investigated for P-doped polycrystalline diamond films. It is demonstrated that the turn-on voltage of the electron emission decreases with increasing temperature for the P-doped diamond film, while no variation in the turn-on voltage occurs for the undoped diamond film. The temperature-dependent field emission characteristics are found to be inherent to the P-doped diamond film. A behavior of the field emission characteristics can be well explained by means of the thermionic field emission model combined with the temperature dependence of the ionized donor concentration. This means that an increase of the ionized donor concentration with increasing temperature may lead to a reduction in the tunnel barrier width at the interface between the diamond and the cathode, resulting in an enhancement of the internal emission current. It is suggested that the internal electron emission is important to the field emission characteristics of the P-doped diamond films. A variation in the field emission characteristics of P-doped diamond films with various cathode metals and with various P-doping concentrations can be consistently understood on the basis of the internal electron emission model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371414
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  • 7
    Electronic Resource
    Electronic Resource
    Fowler–Nordheim current injection and write/erase characteristics of metal–oxide–nitride–oxide–Si structure grown with helicon-wave excited plasma processing (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 551-557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide nitride–oxide–Si (MONOS) structure was fabricated using the oxidation-nitridation series with helicon-wave O2–Ar and N2–Ar plasmas, respectively. The detrimental effect of Ar ion etching was minimized during the fabrication process by controlling the plasma–sheath width. The top oxide was very thin (∼1–2 nm) as compared with nitride (∼12–13 nm) and bottom oxide (∼7–8 nm). Fowler–Nordheim tunneling electron injection was performed in this MONOS diode for both dc and pulsed stress voltages with the electrical polarity being changed. For the positive stress voltage, the shift of the threshold voltage Vth was negative and larger for the smaller stress voltage. It was higher for the pulsed stress than for the dc one. On the other hand, Vth shift is positive and smaller for the pulsed stress than for the dc one for the negative stress bias. These findings can almost be explained by the avalanche breakdown model together with the effect of the total amount of the injected carries. Terman analysis indicated that the interface state density did not increase after both positive and negative stresses, which was probably due to film structure and the presence of a small amount of Si oxynitride (or Si–N–O bonds) at the insulator/Si interface. Write/erase characteristics were also briefly discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369488
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  • 8
    Electronic Resource
    Electronic Resource
    An inexpensive handmade grated integrator (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4395-4396 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An inexpensive gated integrator is made entirely of parts available in an ordinary electronics shop. It works well to average the repetitive signals in observing the spectra of laser-induced fluorescence, multiphoton ionization, and so on. The minimum gate delay of 200 ns and the minimum gate width of 25 ns have been achieved with a rapid analog switch integrated circuit. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145336
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  • 9
    Electronic Resource
    Electronic Resource
    Conceptual design of SPring-8 front ends : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1771-1773 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The conceptual design of the front ends have been completed for the SPring-8 under construction in Japan. Standardizing the front ends and sharing the heat load among the beamline components are the philosophy for the design. Taking the beam properties into consideration, three types of the front ends which correspond to the undulator, multipole wiggler, and bending magnet beamlines are designed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145845
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  • 10
    Electronic Resource
    Electronic Resource
    Fundamental design of the high energy undulator pilot beamline for macromolecular crystallography at the SPring-8 : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1703-1705 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The SPring-8 project team adopted our proposal for public beamline as one of two pilot beamlines for standardizing the beamline elements. The light source of this beamline is an in-vacuum-type undulator of magnetic periodicity of 3.2 cm, which emits highly brilliant x rays in a wide energy range between 9 and 38 keV. The highest power emitted from the light source is 5 kW. The corresponding power density is 300 kW/mrad2. To handle the tremendous power density, grazing incidence diffraction with variable glancing angle will be used for the first crystal of a fixed-exit double-crystal monochromator. To focus the high energy x rays up to 38 keV, two supermirrors (Ovonic Synthetic Materials Co.) will be installed in vertical and horizontal directions independently to get a quasi-isotropic and small beam profile at a focal position. In the experimental station, the sample crystals will be mounted on the κ-type goniostat, and the Weissenberg photographs will be recorded by on-line mode on an imaging plate detector of high-speed readout. Based on the excellent performance of the beamline, the routine structure determination of macromolecules will become available by using the newly constructed software system corresponding to the multiple isomorphous replacement technique with optimized anomalous scattering. The structure analyses with smaller sample crystals than that usually used and with the specimen of the larger unit cell will also become possible. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145888
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