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  • Artikel  (276)
  • Molecular Diversity Preservation International  (150)
  • American Institute of Physics (AIP)  (126)
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  • Artikel  (276)
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  • 1
    Publikationsdatum: 2018-06-11
    Digitale ISSN: 2073-4360
    Thema: Chemie und Pharmazie , Maschinenbau , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Publikationsdatum: 2019-10-26
    Beschreibung: We previously reported on a method for X-ray single-crystal structure determination from a powder sample via a magnetically oriented microcrystal suspension (MOMS). The method was successfully applied to orthorhombic microcrystals (L-alanine, P212121). In this study, we apply this method to monoclinic microcrystals. Unlike most of the orthorhombic MOMSs, monoclinic MOMSs exhibit two or four orientations with the same magnetic energy (we refer to this as twin orientations), making data processing difficult. In this paper, we perform a MOMS experiment for a powder sample of monoclinic microcrystal (α-glycine, P21/n) to show that our method can also be applied to monoclinic crystals. The single-crystal structure determined in this work is in good agreement with the reported one performed on a real single crystal. Furthermore, the relationship between the crystallographic and magnetic susceptibility axes is determined.
    Digitale ISSN: 2073-4352
    Thema: Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Publikationsdatum: 2019-08-26
    Beschreibung: Obstructive sleep apnea (OSA) causes many systemic disorders via mechanisms related to sympathetic nerve activation, systemic inflammation, and oxidative stress. OSA typically shows repeated sleep apnea followed by hyperventilation, which results in intermittent hypoxia (IH). IH is associated with an increase in sympathetic activity, which is a well-known pathophysiological mechanism in hypertension and insulin resistance. In this review, we show the basic and clinical significance of IH from the viewpoint of not only systemic regulatory mechanisms focusing on pulmonary circulation, but also cellular mechanisms causing lifestyle-related diseases. First, we demonstrate how IH influences pulmonary circulation to cause pulmonary hypertension during sleep in association with sleep state-specific change in OSA. We also clarify how nocturnal IH activates circulating monocytes to accelerate the infiltration ability to vascular wall in OSA. Finally, the effects of IH on insulin secretion and insulin resistance are elucidated by using an in vitro chamber system that can mimic and manipulate IH. The obtained data implies that glucose-induced insulin secretion (GIS) in pancreatic β cells is significantly attenuated by IH, and that IH increases selenoprotein P, which is one of the hepatokines, as well as TNF-α, CCL-2, and resistin, members of adipokines, to induce insulin resistance via direct cellular mechanisms. Clinical and experimental findings concerning IH give us productive new knowledge of how lifestyle-related diseases and pulmonary hypertension develop during sleep.
    Print ISSN: 1661-7827
    Digitale ISSN: 1660-4601
    Thema: Energietechnik , Medizin
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2278-2280 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Effects of stress on solid-phase crystallization of amorphous silicon (a-Si) were studied by laser Raman spectroscopy. Compressive stress was introduced in a-Si with a Si3N4 cap. The speed of crystallization decreased with the increase of the stress while it increased again with an additional cap of SiO2 on a Si3N4 cap. A SiO2 cap introduced tensile stress in an a-Si film and relaxed compressive stress by a Si3N4 cap. The reason why crystallization of a-Si is suppressed is that the stress is elastic and that it does not relax with crystallization. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1907-1914 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Recent gyrotron oscillator experiments have achieved record powers at 170 GHz. Single mode emission with a peak output power of 1.5 MW and an efficiency of 35% has been measured. The experiment is based on a resonant TE28,8,1 cylindrical cavity situated in a 6.7 T magnetic field. Microwaves are generated in the cavity by an 83 kV annular electron beam produced by a triode-type magnetron injection gun that is capable of currents up to 50 A. Megawatt power levels with efficiencies between 30%–36% have been measured over a wide range of operating parameters for the TE28,8,1 mode. Similar results were also achieved in the neighboring TE27,8,1 mode at 166.6 GHz, and the TE29,8,1 mode at 173.5 GHz. The high output power is the result of a carefully designed electron gun with low perpendicular velocity spread (6%–10%) and a novel cavity with an output iris that is less prone to mode competition. These results are in good agreement with nonlinear multimode simulations. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1943-1950 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High IP hot ion high confinement (H) mode at IP up to 4.5 MA has been exploited. Sawtooth stabilization by ion cyclotron range of frequencies (ICRF) heating is effective to improve performance in this regime. The performance is limited by the onset of giant edge localized modes (ELMs). It was found that the edge pressure gradient at the onset of ELMs can be increased with increasing triangularity δ up to 0.4 at IP〈1.2 MA. The normalized beta (βN) value at the ELM onset also increases from ∼1 to ∼2.8 when δ is increased from ∼0.1 to ∼0.33, respectively. In the reversed-shear operation, an internal transport barrier (ITB) appears, not only for the ions but also for the electrons. The improved confinement region is quite large (within r/a∼0.65). The highest confinement enhancement factor (H factor) and βN achieved so far are, respectively, 2.6 and 2.4 for reversed-shear plasmas. A scaling law of the H-mode threshold power, which is consistent with the International Thermonuclear Experimental Reactor (ITER) [Y. Shimomura, Phys. Plasmas 1, 1612 (1994)] scaling, is derived. The power threshold for ITB formation in the high βp mode depends on the electron density, but not on the toroidal field. It is validated that the control of the toroidal rotation is effective to control toroidicity-induced Alfvén eigenmodes (TAE modes). © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 4659-4661 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The radial profile of electron temperature deduced from the measured electron energy distribution function (EEDF) is investigated in an axially homogeneous He positive column and compared with a theoretical one calculated from the electron energy balance equation. The radial shift of the measured EEDF can be explained by the effect of the ambipolar potential. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1160-1165 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electron energy distribution function (EEDF) in a positive column of low-pressure and discharge current is determined not only by the local collision processes and the axial electric field action, but also by the transport phenomenon, the radial ambipolar diffusion due to the gradient of plasma density. Thus, to completely determine the EEDF, the Boltzmann equation including radial inhomogeneity terms has to be solved. The present work proposes a simplified method to account for the radial inhomogeneity, when the electron kinetics in the central part of the positive column can be reduced to be one energy-dimensional. The radial diffusion of electrons is taken into account via a wall loss term. A greatly simplified kinetic equation is obtained and its numerical solutions agree well with the EEDF determined from Langmuir probe measurements in a helium dc discharge positive column. Also, a comparison of the present method with local and nonlocal approach theories is made. A discrepancy is observed, especially at high energies, where either local or nonlocal approach theories predict too-large values of EEDF. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4635-4642 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Field emission characteristics have been investigated for P-doped polycrystalline diamond films. It is demonstrated that the turn-on voltage of the electron emission decreases with increasing temperature for the P-doped diamond film, while no variation in the turn-on voltage occurs for the undoped diamond film. The temperature-dependent field emission characteristics are found to be inherent to the P-doped diamond film. A behavior of the field emission characteristics can be well explained by means of the thermionic field emission model combined with the temperature dependence of the ionized donor concentration. This means that an increase of the ionized donor concentration with increasing temperature may lead to a reduction in the tunnel barrier width at the interface between the diamond and the cathode, resulting in an enhancement of the internal emission current. It is suggested that the internal electron emission is important to the field emission characteristics of the P-doped diamond films. A variation in the field emission characteristics of P-doped diamond films with various cathode metals and with various P-doping concentrations can be consistently understood on the basis of the internal electron emission model. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 551-557 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Metal–oxide nitride–oxide–Si (MONOS) structure was fabricated using the oxidation-nitridation series with helicon-wave O2–Ar and N2–Ar plasmas, respectively. The detrimental effect of Ar ion etching was minimized during the fabrication process by controlling the plasma–sheath width. The top oxide was very thin (∼1–2 nm) as compared with nitride (∼12–13 nm) and bottom oxide (∼7–8 nm). Fowler–Nordheim tunneling electron injection was performed in this MONOS diode for both dc and pulsed stress voltages with the electrical polarity being changed. For the positive stress voltage, the shift of the threshold voltage Vth was negative and larger for the smaller stress voltage. It was higher for the pulsed stress than for the dc one. On the other hand, Vth shift is positive and smaller for the pulsed stress than for the dc one for the negative stress bias. These findings can almost be explained by the avalanche breakdown model together with the effect of the total amount of the injected carries. Terman analysis indicated that the interface state density did not increase after both positive and negative stresses, which was probably due to film structure and the presence of a small amount of Si oxynitride (or Si–N–O bonds) at the insulator/Si interface. Write/erase characteristics were also briefly discussed. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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