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  • Springer  (351)
  • American Physical Society  (230)
  • American Institute of Physics (AIP)  (83)
  • Cell Press  (32)
  • 2015-2019  (395)
  • 1995-1999  (251)
  • 1975-1979  (50)
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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 7902-7909 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The unimolecular dissociation of trichloroethylene in its electronic ground state has been investigated using an infrared multiphoton dissociation combined with photofragmentation translational spectroscopy to measure product translational energies. The main reaction channel was found to be HCl elimination on the basis of observed product time-of-flight (TOF) spectra. A center-of-mass translational energy distribution for this channel provides direct evidence for competition between two channels, three- and four-centered HCl eliminations. Cl elimination was found to be a minor but significant channel from observed Cl+ and C2HCl+TOF spectra. The branching ratios were determined as 0.28, 0.55, and 0.17 for the three- and four-centered HCl eliminations and the Cl elimination, respectively. The three-centered channel exhibits a "statistical'' translational energy distribution which is typical for a reaction with no potential energy barrier in the reverse reaction, that is to say, no exit barrier reaction. In contrast, the four-centered channel exhibits a "nonstatistical'' translational energy distribution having a peak at around 2 kcal/mol in energy, indicating that a significant exit barrier exists in the channel. The fraction of potential energy converted to translational energy was estimated to be around 10%. Ab initio calculations at the QCISD(T)/6-311+G**//MP2(FC)/6-31G* level were employed to confirm the reaction mechanism. The agreement in the energetics is quite good. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1349-9432
    Keywords: LD-YAG-SHG laser ; frequency stabilization ; dispersion of iodine molecules ; acousto-optic frequency shifter
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Frequency of a 532 nm emission line of a diode-laser-pumped Nd:YAG laser is stabilized by lock of the output line to the linear absorption line of iodine molecules. The stabilization method is very simple utilizing the frequency shift caused with an acousto-optic modulator. The laser frequency was stabilized at the zero-crossing point of the second-derivative of the dispersion curve. Instability obtained by the error signal is affected by the phase-characteristics of detectors, which results in 3*10-8.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of inclusion phenomena and macrocyclic chemistry 32 (1998), S. 375-383 
    ISSN: 1573-1111
    Keywords: DNA double strand ; threading intercalator ; tris-intercalator ; macrocyclic bis-threading intercalator ; catenane
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Threading intercalators are a novel class of intercalators that carry two substituents along the diagonal positions of an aromatic ring. These substituents are projecting out in DNA grooves when bound to DNA. Poly-intercalators carrying threading intercalating parts are quite novel and were recently found to show a unique DNA binding behavior. We review herein two types of poly-intercalators. First, tris-intercalators carrying a threading intercalator part in the middle of the molecule are described. These intercalators appear to intercalate into double stranded DNA in a special binding manner, which we call the penetrating mode, in which all the three intercalating units are arranged linearly with one of them penetrating into the DNA ladder. We synthesized two tris-intercalators ( 3 and 4) of this type and studied their binding behavior for double stranded DNA. All the experimental results were consistent with the proposed penetrating mode. Another type of threading poly-intercalators is a macrocyclic bis-threading intercalator ( 5). We found that this compound can bis-intercalate to double stranded DNA when the base pairing is disrupted temporarily to form a complex with a unique structure like a catenane. On the basis of a study of the interaction of such intercalators we envisage that DNA is a flexible and dynamic entity. These novel families of poly-intercalators will expand the scope of DNA poly-intercalation chemistry with possible medicinal applications.
    Type of Medium: Electronic Resource
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  • 4
    Publication Date: 2015-02-20
    Description: We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al 2 O 3 and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm 2 /V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al 2 O 3 ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm 2 /V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 5
    Publication Date: 2015-03-25
    Description: We have systematically studied the impact of interfacial InAs layers on Al 2 O 3 /GaSb metal-oxide-semiconductor (MOS) interface properties. The interfacial InAs layers improved the capacitance versus voltage ( C-V ) curves of the Al 2 O 3 /GaSb MOS capacitors (MOSCAPs) fabricated by an ex-situ process. The minimum interface-trap density ( D it ) value of an Al 2 O 3 /1.5-nm-thick InAs/p-GaSb MOSCAP is ∼6.6 × 10 12  cm −2 eV −1 , which is reduced by ∼50% from that of ∼1.4 × 10 13  cm −2 eV −1 in an Al 2 O 3 /p-GaSb MOSCAP. Also, the interfacial InAs layers significantly improved the C-V curves of the Al 2 O 3 /n-GaSb MOSCAPs. The InAs layer can improve the Al 2 O 3 /GaSb MOS interface properties both in valence band side and in conduction band side.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 6
    Publication Date: 2016-11-24
    Description: We demonstrate a single channel III–V complementary metal-oxide-semiconductor (CMOS) transistors by ultrathin body InAs/GaSb-on-insulator (-OI) channels on Si. The ultrathin InAs layers with the quantum confinement and tight gate-control of the identical InAs/GaSb-OI channel can realize III–V CMOS operation. The quantum well InAs/GaSb-OI on Si structures with the proper thickness of the InAs and GaSb layers can allow us to operate both n-channel and p-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs and p-MOSFETs) with high channel mobilities in an identical InAs/GaSb-OI transistor. The InAs thickness needs to be ≲2.5 nm for CMOS operation in the single channel InAs/GaSb-OI structure.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 7
  • 8
    Publication Date: 2018-11-12
    Description: The study investigates the in-situ strength of sediments across a plate boundary décollement using drilling parameters recorded when a 1180-m-deep borehole was established during International Ocean Discovery Program (IODP)Expedition 370, Temperature-Limit of the Deep Biosphere off Muroto (T-Limit). Information of the in-situ strength of the shallow portion in/around a plate boundary fault zone is critical for understanding the development of accretionary prisms and of the décollement itself. Studies using seismic reflection surveys and scientific ocean drillings have recently revealed the existence of high pore pressure zones around frontal accretionary prisms, which may reduce the effective strength of the sediments. A direct measurement of in-situ strength by experiments, however, has not been executed due to the difficulty in estimating in-situ stress conditions. In this study, we derived a depth profile for the in-situ strength of a frontal accretionary prism across a décollement from drilling parameters using the recently established equivalent strength (EST) method. At site C0023, the toe of the accretionary prism area off Cape Muroto, Japan, the EST gradually increases with depth but undergoes a sudden change at ~ 800 mbsf, corresponding to the top of the subducting sediment. At this depth, directly below the décollement zone, the EST decreases from ~ 10 to 2 MPa, with a change in the baseline. This mechanically weak zone in the subducting sediments extends over 250 m (~ 800–1050 mbsf), corresponding to the zone where the fluid influx was discovered, and high-fluid pressure was suggested by previous seismic imaging observations. Although the origin of the fluids or absolute values of the strength remain unclear, our investigations support previous studies suggesting that elevated pore pressure beneath the décollement weakens the subducting sediments.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4354-4359 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 (CIS) films with Cu/In ratios of γ=0.82–1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 177-191 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cold fluid theory of the Pierce beam–plasma system is modified by the incorporation of warm plasma effects. The controlling parameter α in the cold theory, where α=Lωp/V0, L=diode width, ωp=plasma frequency, and V0=beam velocity at injection, is replaced in the warm theory by an effective value of α involving the thermal velocity. The theory is verified by means of a fluid simulation code; the phase states for a cold plasma, including the chaotic state, are recovered for a warm plasma, but with a shift in values of the bifurcation parameter. Furthermore, in order to include plasma kinetic effects, an extensive electrostatic particle simulation code is developed to model the Pierce system. Among the new physical effects arising in this particle model are the local and global thermalization of electrons by electrostatic waves, and blocking oscillations due to particle reflection and trapping. As the parameter α is decreased, the electric field at the injection point typically changes state as follows: blocking oscillation→small fluctuations→quasisteady oscillation→prechaotic oscillation→chaos→blocking oscillation→dc electric field. The mechanics of chaotic oscillations in the Pierce system are examined with particular regard to kinetic effects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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