ISSN:
0332-1649
Source:
Emerald Fulltext Archive Database 1994-2005
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mathematics
Notes:
Develops a finite element analysis and solution strategy for the augmented drift-diffusion equations in semiconductors device theory using a multilevel scheme. Decouples the drift-diffusion equations using Gummel iteration with incremental continuation in the applied voltage. Includes augmentation of the carrier mobility to address the issue of non-local electric field effects (velocity overshoot) within the framework of the drift-diffusion formulation. Gives comparison results with hydrodynamic and Monte Carlo models and sensitivity studies with respect to the augmentation parameter. Discretizes the equations with a special finite element method using bases of variable polynomial degree. Accomplishes solution of the resulting linear systems with a multilevel method using the basis degree as the grid level. Presents performance results and comparison studies with direct elimination.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1108/03321649610126439
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