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  • American Institute of Physics (AIP)  (10)
  • 2015-2019  (6)
  • 2000-2004  (4)
  • 1955-1959
  • 1945-1949
  • 1920-1924
  • 1
    Electronic Resource
    Electronic Resource
    Decomposition and nanocrystallization in reactively sputtered amorphous Ta–Si–N thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1986-1991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nanocrystallization process of reactively sputtered thin amorphous Ta–Si–N films is investigated by anomalous small angle x-ray scattering (ASAXS) and x-ray diffraction (XRD). Changes in the microstructure in Ta40Si14N46 films, density variations in the amorphous matrix, decomposition, formation, and growth of nanocrystals after vacuum anneals at different temperatures in the range between 800 and 1000 °C are observed and the results of the different techniques are compared. From a Fourier analysis of ASAXS intensities the nanostructure of the investigated ternary system is derived using a model of hard spheres according to Guinier and Fournet. ASAXS investigations indicate that the noncrystalline samples can be described by a monophase fit and the crystallized samples by a bimodal-phase fit, the latter results being consistent with XRD which identifies TaN and Ta5Si3 phases. Detailed analysis shows that TaN nanograins of approximately 2 nm size develop after a decomposition process. Larger grains of Ta5Si3 are observed in addition to the TaN grains if annealing is performed at temperatures higher than 950 °C. The aim of these investigations is to give a generally applicable explanation of the barrier failure mechanism for Ta–Si–N diffusion barriers, which is actually observed at temperatures below the crystallization temperature if the films are used in contact with Cu or Al. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388173
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  • 2
    Electronic Resource
    Electronic Resource
    Superspace formulation of general massive gauge theories and geometric interpretation of mass-dependent Becchi–Rouet–Stora–Tyutin symmetries (2000)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 7304-7332 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A superspace formulation is proposed for the osp(1,2)-covariant Lagrangian quantization of general massive gauge theories. The superalgebra osp(1,2) is considered as subalgebra of the superalgebra sl(1,2)∼osp(2,2) which may be considered as the algebra of generators of the conformal group in a superspace with two anticommuting coordinates. The mass-dependent (anti)Becchi–Rouet–Stora–Tyutin symmetries of proper solutions of the quantum master equations in the osp(1,2)-covariant formalism are realized in that superspace as invariance under translations combined with mass-dependent special conformal transformations. The Sp(2) symmetry—in particular the ghost number conservation—and the new ghost number conservation are realized in the superspace as invariance under symplectic rotations and dilatations, respectively. The new ghost number conservation is generally broken by the choice of a gauge. The transformations of the gauge fields and the full set of necessarily required (anti)ghost and auxiliary fields under the superalgebra sl(1,2) are determined both for irreducible and first-stage reducible theories with closed gauge algebra. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288496
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  • 3
    Electronic Resource
    Electronic Resource
    Electrode modification by electron-induced patterning of aromatic self-assembled monolayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3323-3325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled monolayers of ω-(4′-methyl-biphenyl-4-yl)-dodecyl thiol [CH3–C6H4-C6H4–(CH2)12–SH,BP12] on gold were patterned via exposure to 300 eV electrons. Subsequent copper deposition in an electrochemical cell revealed behavior opposite to that of electron beam patterned monolayers of alkanethiols. Whereas alkanethiols act as a positive resist and lead to copper deposition only on irradiated parts, the biphenyl based thiol acts as a negative resist. At the irradiated areas the layer exhibits blocking behavior and copper deposition is observed only on the nonirradiated parts. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415771
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  • 4
    Electronic Resource
    Electronic Resource
    Nanocrystallization of amorphous-Ta40Si14N46 diffusion barrier thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3618-3620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nanocrystallization process in thin amorphous-Ta40Si14N46 films, annealed in the range between 800 and 1000 °C for 1 h, is investigated by high-resolution transmission electron microscopy and high-angle annular dark-field and energy-dispersive x-ray analyses. At 800 °C clusters of about 2 nm in size indicate that compositional inhomogeneities have developed while the film has still remained structurally amorphous. The sample annealed at 900 °C contains a high density of nanograins of TaN measuring about 2 nm as well as amorphous structures measuring 75–100 nm having a high tantalum content. After annealing at 1000 °C, an almost entirely crystalline structure is observed with 4-nm-sized particles of cubic TaN and 15-nm-sized grains of Ta5Si3. Possible mechanisms driving these structural changes are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377626
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  • 5
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    High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO2 with transition metal additions (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-26
    Description: To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO 2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813  μ W m −1  K −2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO 2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Atomistic growth phenomena of reactively sputtered RuO2 and MnO2 thin films (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-07-03
    Description: We have synthesized RuO 2 and MnO 2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO 2 nanorods and faceted, nanocrystalline MnO 2 , are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O 2 molecules are preferentially adsorbed at their respective RuO 2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO 2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO 2 . Due to this atomic scale decomposition, MnO 2 may have to be renucleated during growth, which is consistent with experiments.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Thin film based plasmon nanorulers (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-07
    Description: In this work, isolated metal nanoparticles are supported on a dielectric thin film that is placed on a conducting plane. The optical scattering characteristics of these metal nanoparticles are directly correlated with the localized surface plasmon states of the nanoparticle—image particle dimer, formed in the conducting plane below. Quantification of plasmon resonance shifts can be directly correlated with the application of the plasmon nanoruler equation. This simple geometry shows that direct optical techniques can be used to resolve thickness variations in dielectrics of only a few nanometers.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Charge trapping of Ge-nanocrystals embedded in TaZrOx dielectric films (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-01-16
    Description: Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO x by thermal annealing of co-sputtered Ge-TaZrO x layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.
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    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 9
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    Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-02-10
    Description: During dynamic random access memory (DRAM) capacitor scaling, a lot of effort was put searching for new material stacks to overcome the scaling limitations of the current material stack, such as leakage and sufficient capacitance. In this study, very promising results for a SrTiO 3 based capacitor with a record low capacitance equivalent thickness value of 0.2 nm at target leakage current are presented. Due to the material properties of SrTiO 3 films (high vacancy concentration and low band gap), which are leading to an increased leakage current, a physical thickness of at least 8 nm is required at target leakage specifications. However, this physical thickness would not fit into an 18 nm DRAM structure. Therefore, two different new approaches to develop a new ZrO 2 based DRAM capacitor stack by changing the inter-layer material from Al 2 O 3 to SrO and the exchange of the top electrode material from TiN to Pt are presented. A combination of these two approaches leads to a capacitance equivalent thickness value of 0.47 nm. Most importantly, the physical thickness of
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 10
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    Thermomechanical response of thermoelectrics (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-12-03
    Description: We have theoretically investigated the product of elastic modulus and linear coefficient of thermal expansion for 20 thermoelectrics. The product is inversely proportional to equilibrium volume, which is consistent with the Debye-Grüneisen model. Oxides exhibit larger products, while the products of Te-containing thermoelectrics are considerably smaller. This is likely due to strong bonding in these oxides, which makes them prone to thermal stress, thermal shock, and thermal fatigue. As this product is rarely available in literature and the equilibrium volume is easily measurable, this work provides a quick estimation for the thermomechanical response of thermoelectric phases.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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