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  • Elsevier  (370)
  • American Physical Society  (50)
  • American Institute of Physics (AIP)  (26)
  • Macmillian Magazines Ltd.
  • 2015-2019  (208)
  • 2000-2004  (240)
  • 1960-1964  (3)
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  • 11
    Digitale Medien
    Digitale Medien
    Measurement and control of absolute nitrogen atom density in an electron-beam-excited plasma using vacuum ultraviolet absorption spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1756-1759 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The absolute nitrogen (N) atom density in an electron-beam-excited plasma (EBEP) operating at an ultralow pressure has been investigated by vacuum ultraviolet absorption spectroscopy, employing a microdischarge hollow-cathode lamp. The measured N atom density was estimated to be around 6×1011 cm−3, and the dissociation fraction was 4.9% at a N2 pressure of 0.05 Pa, an electron-beam current of 10 A, and an electron-beam acceleration voltage of 120 V. The EBEP potentially enables us to control the electron density and electron energy independently with the electron-beam current and electron-beam acceleration voltages, respectively. It was found that N atom densities increased with increasing electron-beam current and electron acceleration voltage under low-pressure conditions. The EBEP shows great promise as a N atom source operating at an ultralow pressure. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1305559
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  • 12
    Digitale Medien
    Digitale Medien
    Kinetics and role of C, O, and OH in low-pressure nanocrystalline diamond growth (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4572-4579 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A simple low-pressure condition at 80 mTorr has been employed to study the kinetics and role of C, O, and OH in diamond growth by using inductively coupled CO/CH4/H2 and O2/CH4/H2 plasmas. Vacuum ultraviolet absorption spectroscopy (VUVAS) and actinometric optical emission spectroscopy (OES) were used to examine the densities of ground-state C atoms and emissive species such as OH, C2, and O, respectively. Diamond films consisting of nanocrystallites with sizes as small as 20 nm were obtained on positively biased Si substrates only when CH4 was fed. Both diamond and nondiamond growth were enhanced with increasing CO for a fixed CH4 concentration of 5%, while diamond growth was suppressed with increasing O2. Comprehensive discussion along with the VUVAS and OES results suggested that the C atoms resulting mainly from CO by electron impact dissociation had a close relation with the formation of C2 or still larger species as the precursors to nondiamond phase, while the OH radicals resulting predominantly by loss reactions of the byproduct O atoms with H2 and CH4 were highly responsible for the enhanced diamond growth. A large amount of O atoms from O2 was shown to affect the initial nucleation stage seriously. The results support the growth chemistry of diamond from H-hybridized carbon radicals fragmented from CH4 rather than from H-stripped carbon radicals. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.373104
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  • 13
    Digitale Medien
    Digitale Medien
    Precursors of fluorocarbon film growth studied by mass spectrometry (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7185-7190 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The precursor species of fluorocarbon film growth at the reactor wall irradiated by an electron cyclotron resonance C4F8 plasma have been studied by using a quadrupole mass spectrometer. The amount of polymeric neutral species [CmFn (m≥2)] and absolute densities of CFx (x=1–3) radicals in the vicinity of the wall were measured by electron attachment and threshold ionization mass spectrometry, respectively. The trends in the film growth rate as a function of gas residence time, diluted hydrogen concentration, and microwave power were well accounted for by the competition between the incorporation of CFx radicals and positive ions and the removal by F and H atoms. The fluxes of CFx radicals and positive ions incident upon the wall were shown to be comparable with the net condensed carbon flux derived from the growth rate. In contrast, the trends in the amount of polymeric neutrals were not well correlated to the growth rate. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372967
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  • 14
    Digitale Medien
    Digitale Medien
    Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1955-1961 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ultrathin fluorinated silicon nitride (SiNx) films of 4 nm in thickness were formed on a Si substrate at 350 °C in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH3/SiF4) gases. Ultrathin fluorinated SiNx film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO2 of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (Dit=4×1011 cm−2) in the capacitance–voltage characteristics. The film structures and the surface reactions for the fluorinated SiNx film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiNx films was found to be a key factor in the formation of fluorinated SiNx films of high quality at low temperatures. Fluorinated SiNx is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1381556
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  • 15
    Digitale Medien
    Digitale Medien
    Spatial distribution of the absolute densities of CFx radicals in fluorocarbon plasmas determined from single-path infrared laser absorption and laser-induced fluorescence (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 580-586 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The spatial distribution of the absolute density of CFx (x=1–3) radicals and their translational temperatures in an electron cyclotron resonance (ECR) plasma generated from a tetrafluorocarbon (C4F8) gas were examined using infrared diode-laser absorption spectroscopy (IRLAS) without a multiple reflection cell, namely, single-path IRLAS. Furthermore, we have developed a method of measuring CF and CF2 radical densities using single-path IRLAS combined with laser-induced fluorescence (LIF) spectroscopy. This method enables us to measure the spatial distribution of absolute radical densities with high accuracy, because of the IRLAS infrared laser beam and the LIF ultraviolet laser beam having identical paths. Under all the conditions studied, a spatially hollow distribution of the CF2 radical density is formed; the CF2 radical density in the vicinity of the chamber wall is much higher than that in the plasma. However, the spatial distribution of the CF radical density differs greatly from that of the CF2 radical density. The translational temperatures of CF and CF2 radicals are evaluated to be ∼700 K. On the basis of the measured results, we clarify the mechanisms of the formation of the spatial distribution, and conclude that the hollow distribution of the CF2 radical density is not caused by radical generation from the chamber wall, rather, the dominant mechanism for the formation of this distribution is the electron-impact dissociation of C4F8 gas in the ECR region and diffusion from the upper part of the plasma chamber under the present plasma conditions where the flux of ions incident to the chamber wall is low. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1337090
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  • 16
    Digitale Medien
    Digitale Medien
    Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5083-5087 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have clarified effects of ions and radicals on the film property of ultrathin silicon nitride (SiNx) films of 5 nm in thickness formed on Si substrates at 300 °C in electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) employing ammonia and silane (NH3/SiH4), and nitrogen and silane (N2/SiH4) gases. In situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy confirmed that in N2/SiH4 plasma, Si-N bonds in the film were increased by eliminating charged species, and thus, radicals promoted the formation of the SiNx film of high Si-N bond density. On the other hand, Si-N bonds in the film were decreased by eliminating charged species, and eventually, ions played an important role in forming the film of high Si-N bond density in NH3/SiH4 plasma. The excellent hysteresis of 0.04 V was successfully achieved with the NH3/SiH4 plasma. Furthermore, the quadrupole mass spectroscopy suggests that NH4+ charged species make a significant contribution to the formation of ultrathin SiNx films with high quality. These results provide insights into important species to be controlled in the PECVD for low temperature formation of the SiNx gate dielectric films in ultralarge scale integrated circuits. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1337939
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  • 17
    Digitale Medien
    Digitale Medien
    Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3723-3725 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright green and blue InGaN single-quantum-well (SQW) light-emitting diodes has been studied over a wide temperature range (T=15–300 K) under a weak injection current of 0.1 mA. It is found that when T is slightly decreased to 140 K, the EL intensity efficiently increases, as usually seen due to the improved quantum efficiency. However, with further decrease of T down to 15 K, it drastically decreases due to reduced carrier capture by SQW and trapping by nonradiative recombination centers. This unusual temperature-dependent evolution of the EL intensity shows a striking difference between green and blue SQW diodes owing to the different potential depths of the InGaN well. The importance of efficient carrier capture processes by localized tail states within the SQW is thus pointed out for enhancement of radiative recombination of injected carriers in the presence of the high-density dislocations. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1421416
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  • 18
    Digitale Medien
    Digitale Medien
    Field emission from GaN surfaces roughened by hydrogen plasma treatment (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3229-3231 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaN layers are grown on sapphire substrates with AlN buffer layers by the metalorganic chemical vapor deposition method. GaN layers are doped with Si. The electron density of the n-type GaN is 2×1017 cm−3. It is found that the GaN surface is etched with hydrogen (H2) plasma produced by supplying microwave power leading to the formation of the roughened surface of GaN. A variation in the surface morphology occurs due to microwave power and gas pressure. Field emission measurements are carried out for GaN with various surface morphologies. It is observed that the turn-on electric field decreases with increasing surface roughness of the GaN. A turn-on electric field of the electron emission is estimated to be as low as 12.4 V/μm. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1370979
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  • 19
    Digitale Medien
    Digitale Medien
    Field emission characteristics of BN/GaN structure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4533-4535 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: n-type gallium nitride (GaN) layers grown on sapphire substrates by metalorganic chemical vapor deposition are used to examine field emission characteristics. The electron concentration of the GaN is 2×1017 cm−3. In order to enhance the electric field, the GaN surface is roughened by hydrogen (H2) plasma treatment. Boron nitride (BN) films are grown on the roughened surface of the GaN by plasma-assisted chemical vapor deposition. The turn-on electric field between the anode and sample surface is estimated to be 12.4 and 8.8 V/μm from the field emission characteristics of the roughened GaN and the BN/GaN samples, respectively. It is demonstrated that BN coating is effective in improving the field emission characteristics.© 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1427755
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  • 20
    Digitale Medien
    Digitale Medien
    Blockade of RAGE–amphoterin signalling suppresses tumour growth and metastases (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 405 (2000), S. 354-360 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] The receptor for advanced glycation end products (RAGE), a multi-ligand member of the immunoglobulin superfamily of cell surface molecules, interacts with distinct molecules implicated in homeostasis, development and inflammation, and certain diseases such as diabetes and Alzheimer's ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/35012626
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