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First Elastic Electron Scattering from Xe132 at the SCRIT Facility (2017)

Tsukada, K. ; Enokizono, A. ; Ohnishi, T. ; [weitere]

American Physical Society

In: Physical Review Letters. 2017; 118(26): 262501. Published 2017 Jun 27. doi: 10.1103/physrevlett.118.262501.

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Publikationsdatum: 2017-06-27

Print ISSN: 0031-9007

Digitale ISSN: 1079-7114

Thema: Physik

Publiziert von American Physical Society

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Marine protected areas, Satoumi, and territorial use rights for fisheries: A case study from hinase, Japan (2018)

Tsurita, Izumi ; Hori, Juri ; Kunieda, Toshihiro ; [weitere]

Elsevier

In: Marine Policy. 2018; 91: 41-48. Published 2018 May 01. doi: 10.1016/j.marpol.2018.02.001.

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Publikationsdatum: 2018-05-01

Print ISSN: 0308-597X

Digitale ISSN: 1872-9460

Thema: Energietechnik , Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Politikwissenschaft , Rechtswissenschaft

Publiziert von Elsevier

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Special issue “The next Marmara earthquake: disaster mitigation, recovery, and early warning” (2017)

Hori, Takane ; Pinar, Ali ; Necmioglu, Ocal ; [weitere]

Springer

In: Earth, Planets and Space. 2017; 69(1): Published 2017 May 05. doi: 10.1186/s40623-017-0648-9.

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Publikationsdatum: 2017-05-05

Print ISSN: 1343-8832

Digitale ISSN: 1880-5981

Thema: Geologie und Paläontologie , Physik

Publiziert von Springer

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Robust and portable capacity computing method for many finite element analyses of a high-fidelity crustal structure model aimed for coseismic slip estimation (2016)

Agata, Ryoichiro ; Ichimura, Tsuyoshi ; Hirahara, Kazuro ; [weitere]

Elsevier

In: Computers & Geosciences. 2016; 94: 121-130. Published 2016 Sep 01. doi: 10.1016/j.cageo.2016.05.015.

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Publikationsdatum: 2016-09-01

Print ISSN: 0098-3004

Digitale ISSN: 1873-7803

Thema: Geologie und Paläontologie , Informatik

Publiziert von Elsevier

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Subsurface reactions of silicon nitride in a highly selective etching process of silicon oxide over silicon nitride (2002)

Ito, Masafumi ; Kamiya, Kiyoshi ; Hori, Masaru ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 3452-3458

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In situ subsurface reaction measurements of silicon nitride in a selective etching process of silicon oxide over silicon nitride using an x-ray photoelectron spectroscopy (XPS) and a Fourier transform infrared reflection absorption spectroscopy (FTIR RAS) have been carried out. Under low selectivity etching conditions using an electron cyclotron resonance plasma employing a pure octafluorocyclobutane (C4F8) gas, a clear difference has been observed between time-evolution spectra of FTIR RAS and those of XPS on the etched silicon nitride films. From these results it has been found that the etching reaction layer is thicker than that under highly selective etching conditions and that SiF3 bonds are located in the deeper region rather than in the shallow region of the reaction layer. On the other hand, under highly selective etching conditions employing C4F8 gas diluted by Ar gas, it has been observed that the shallow region of the reaction layer in the etched silicon nitride films becomes C–C cross-linking-rich and CN sp2 bond-rich. From these results, it is concluded that the C–C cross linking prevents CN sp2 bonds from reacting with F atoms, resulting in the suppression of the etch by-products such as FCN. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1448870

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Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane plasma (2000)

Sumiya, Shigeaki ; Mizutani, Yuko ; Yoshida, Ryohei ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 576-581

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Microcrystalline silicon thin films were formed on quartz substrates by ultrahigh-frequency (UHF) plasma enhanced chemical vapor deposition from a mixture of silane (SiH4) and hydrogen (H2) gases at low substrate temperatures (Ts). The UHF plasma was excited at a frequency of 500 MHz. The deposition rate and the crystallinity of the films were investigated as a function of H2 dilution, total pressure, mixture ratio of SiH4 to H2 and Ts. A crystalline fraction of 63% with a high deposition rate of 7.7 Å/s was obtained even at a Ts of 100 °C. At a temperature of 300 °C, a crystalline fraction of approximately 86% was achieved at a deposition rate of 1.4 Å/s. Diagnostics of the UHF plasma have been carried out using a Langmuir probe, ultraviolet absorption spectroscopy, and optical emission spectroscopy. Good crystallinity was explained by the balance of the sheath voltage and atomic hydrogen densities in the UHF plasma. Namely, the UHF plasma source achieving a high density plasma with a low electron temperature enabled us to reduce the ion bombardment energy incident on the substrates while maintaining a high density of hydrogen atoms, and which improved the crystallinity at low Ts. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.373698

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Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas (2001)

Takashima, Seigou ; Hori, Masaru ; Goto, Toshio

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 5497-5503

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A measurement technique of the absolute concentration of hydrogen (H) atoms in methane (CH4) and/or hydrogen molecule (H2) plasmas has been established. The H-atom concentration was evaluated by vacuum ultraviolet absorption spectroscopy (VUVAS) using a high-pressure H2 microdischarge hollow cathode lamp (H2-MHCL) as the Lyman α (Lα 121.6 nm) light emission source. A measurement technique of the background absorption caused by species other than H atoms at the Lα line was developed by using the VUVAS technique with the MHCL employing nitrogen molecules (N2-MHCL). The lines around Lα used for the background absorption measurements are 2p23s 4P5/2–2p3 4S3/20 at 119.955 nm, 2p23s 4P3/2–2p3 4S3/20 at 120.022 nm, and 2p23s 4P1/2–2p3 4S3/20 at 120.071 nm of the N atom. By using the VUVAS technique with the MHCLs and subtracting the background absorption from the absorption of H atoms at Lα, we have achieved the measurement of the H-atom concentration in an inductively coupled plasma operated in CH4 and/or H2. The H-atom concentration increased from 2×1011 to 3×1012 cm−3 when increasing the CH4 flow rate ratios from 0% to 50% in the CH4–H2 mixture and was almost constant in its range between 50% and 100% at a pressure of 1.33 Pa, a radio frequency power of 200 W, and a total flow rate of 100 sccm. The behavior of the H-atom concentration was compared with that of the Balmer α emission intensity. The decay of the H-atom concentration in the H2 plasma afterglow was investigated to clarify the loss kinetics of H atoms. The dependence of the decay time constant on the pressure showed that H atoms were dominantly lost through diffusion to the wall surface. The diffusion constant of H atoms in H2 plasmas was determined to be 3.0×105 cm2 Pa s−1 at 400 K. The surface loss probability of H atoms on the stainless-steel and the hydrocarbon walls were estimated to be 0.15 and 0.07, respectively. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1410327

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Analysis of electric field distribution in GaAs metal–semiconductor field effect transistor with a field-modulating plate (2000)

Hori, Yasuko ; Kuzuhara, Masaaki ; Ando, Yuji ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 3483-3487

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Electric field distribution in the channel of a field effect transistor (FET) with a field-modulating plate (FP) has been theoretically investigated using a two-dimensional ensemble Monte Carlo simulation. This analysis revealed that the introduction of FP is effective in canceling the influence of surface traps under forward bias conditions and in reducing the electric field intensity at the drain side of the gate edge under pinch-off bias conditions. This study also found that a partial overlap of the high-field region under the gate and that at the FP electrode is important for reducing the electric field intensity. The optimized metal–semiconductor FET with FP (FPFET) (LGF∼0.2 μm) exhibited a much lower peak electric field intensity than a conventional metal–semiconductor FET. Based on these numerically calculated results, we have proposed a design procedure to optimize the power FPFET structure with extremely high breakdown voltages while maintaining reasonable gain performance. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.372370

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Electroluminescent features of oligothiophenes dispersed as a dopant in host matrices (2002)

Suzuki, Mutsumi ; Fukuyama, Masao ; Hori, Yoshikazu

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 5706-5711

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The electroluminescent (EL) features of oligothiophenes dispersed as a dopant in the host matrices comprising tris(8-hydroxyquinoline)aluminum have been investigated. We chose the oligothiophenes that are substituted with phenyl or methyl groups at both the molecular terminals and possess various degrees of polymerization. Regarding both the phenyl- and methyl-substituted materials, the EL spectra are progressively red-shifted with the increasing number of thiophenes. Comparing these spectra with the photoluminescent spectra, we have found out that the EL arises mostly from the dopant molecules of the oligothiophenes. The emission is dominated by energy transfer from host matrices to the dopant molecules, leading to the enhanced device efficiencies. The specific effects of the phenyl- or methyl-substitution and the extension of the π-delocalization in the molecules are also discussed. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1465510

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Behavior of hydrogen atoms in ultrahigh-frequency silane plasma (2001)

Takashima, Seigou ; Hori, Masaru ; Goto, Toshio

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 4727-4731

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have investigated the behavior of the absolute density of hydrogen (H) atoms in ultrahigh-frequency (UHF), (500 MHz) silane (SiH4) plasma by using a vacuum ultraviolet absorption spectroscopy technique with a microdischarge hollow cathode lamp. In the UHF plasma using SiH4 highly diluted with hydrogen molecule (H2) at a pressure of 20 Pa, an UHF power of 1000 W, and a total flow rate of 200 sccm, the absolute density of H atoms slightly increased from 7.4×1011 to 7.9×1011 cm−3 with increasing the SiH4 flow rate ratios from 0% to 2.5% and then the H atom density decreased at the ratio of 5%. The decrease of the density is due to the increase of the reaction between the H atom and the SiH4 molecule. The behavior of the absolute density of H atoms was compared with that of the Balmer α(Hα) emission intensity. It was found that the behaviors of the absolute H atom density and the Hα emission intensity were quite different. Moreover, the kinetics of H atom density in SiH4 plasmas have been clarified on the basis of measured results. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1362414

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