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  • American Institute of Physics (AIP)  (12)
  • 2015-2019  (6)
  • 2000-2004  (4)
  • 1985-1989  (2)
  • 1945-1949
  • 1920-1924
  • 1
    Electronic Resource
    Electronic Resource
    Spectral characteristics of plasma emission during ArF excimer laser ablation of YBa2Cu3O7 (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 469-471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to characterize the laser ablation process as it relates to the deposition of high Tc superconducting thin films, optical emission spectra produced during ArF excimer laser ablation of the high Tc superconductor YBa2Cu3O7 were studied. The population of excited states within the gas phase blow-off material depends strongly on excimer laser fluence at 193 nm. Ablation using relatively low excimer laser fluences produces a significant fraction of YO in the gas phase. The plasmas derived from ablation of targets made from the high Tc material are similar to plasmas observed from ablation of the individual components BaCO3, CuO, and Y2O3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101555
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  • 2
    Electronic Resource
    Electronic Resource
    Decomposition and nanocrystallization in reactively sputtered amorphous Ta–Si–N thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1986-1991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nanocrystallization process of reactively sputtered thin amorphous Ta–Si–N films is investigated by anomalous small angle x-ray scattering (ASAXS) and x-ray diffraction (XRD). Changes in the microstructure in Ta40Si14N46 films, density variations in the amorphous matrix, decomposition, formation, and growth of nanocrystals after vacuum anneals at different temperatures in the range between 800 and 1000 °C are observed and the results of the different techniques are compared. From a Fourier analysis of ASAXS intensities the nanostructure of the investigated ternary system is derived using a model of hard spheres according to Guinier and Fournet. ASAXS investigations indicate that the noncrystalline samples can be described by a monophase fit and the crystallized samples by a bimodal-phase fit, the latter results being consistent with XRD which identifies TaN and Ta5Si3 phases. Detailed analysis shows that TaN nanograins of approximately 2 nm size develop after a decomposition process. Larger grains of Ta5Si3 are observed in addition to the TaN grains if annealing is performed at temperatures higher than 950 °C. The aim of these investigations is to give a generally applicable explanation of the barrier failure mechanism for Ta–Si–N diffusion barriers, which is actually observed at temperatures below the crystallization temperature if the films are used in contact with Cu or Al. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388173
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  • 3
    Electronic Resource
    Electronic Resource
    Superspace formulation of general massive gauge theories and geometric interpretation of mass-dependent Becchi–Rouet–Stora–Tyutin symmetries (2000)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 7304-7332 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A superspace formulation is proposed for the osp(1,2)-covariant Lagrangian quantization of general massive gauge theories. The superalgebra osp(1,2) is considered as subalgebra of the superalgebra sl(1,2)∼osp(2,2) which may be considered as the algebra of generators of the conformal group in a superspace with two anticommuting coordinates. The mass-dependent (anti)Becchi–Rouet–Stora–Tyutin symmetries of proper solutions of the quantum master equations in the osp(1,2)-covariant formalism are realized in that superspace as invariance under translations combined with mass-dependent special conformal transformations. The Sp(2) symmetry—in particular the ghost number conservation—and the new ghost number conservation are realized in the superspace as invariance under symplectic rotations and dilatations, respectively. The new ghost number conservation is generally broken by the choice of a gauge. The transformations of the gauge fields and the full set of necessarily required (anti)ghost and auxiliary fields under the superalgebra sl(1,2) are determined both for irreducible and first-stage reducible theories with closed gauge algebra. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288496
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  • 4
    Electronic Resource
    Electronic Resource
    Electrode modification by electron-induced patterning of aromatic self-assembled monolayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3323-3325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled monolayers of ω-(4′-methyl-biphenyl-4-yl)-dodecyl thiol [CH3–C6H4-C6H4–(CH2)12–SH,BP12] on gold were patterned via exposure to 300 eV electrons. Subsequent copper deposition in an electrochemical cell revealed behavior opposite to that of electron beam patterned monolayers of alkanethiols. Whereas alkanethiols act as a positive resist and lead to copper deposition only on irradiated parts, the biphenyl based thiol acts as a negative resist. At the irradiated areas the layer exhibits blocking behavior and copper deposition is observed only on the nonirradiated parts. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415771
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  • 5
    Electronic Resource
    Electronic Resource
    Nanocrystallization of amorphous-Ta40Si14N46 diffusion barrier thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3618-3620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nanocrystallization process in thin amorphous-Ta40Si14N46 films, annealed in the range between 800 and 1000 °C for 1 h, is investigated by high-resolution transmission electron microscopy and high-angle annular dark-field and energy-dispersive x-ray analyses. At 800 °C clusters of about 2 nm in size indicate that compositional inhomogeneities have developed while the film has still remained structurally amorphous. The sample annealed at 900 °C contains a high density of nanograins of TaN measuring about 2 nm as well as amorphous structures measuring 75–100 nm having a high tantalum content. After annealing at 1000 °C, an almost entirely crystalline structure is observed with 4-nm-sized particles of cubic TaN and 15-nm-sized grains of Ta5Si3. Possible mechanisms driving these structural changes are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377626
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  • 6
    Electronic Resource
    Electronic Resource
    Spectra and structure of small ring compounds. XLVIII. Conformational stability of methylcyclobutane from low frequency Raman data of the gas (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 545-551 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The low frequency (500–80 cm−1) Raman spectra of gaseous methylcyclobutane, c-C4H7CH3, and methyl-d3-cyclobutane have been recorded. A series of Q branches beginning at 161 cm−1 for the light molecule and 154 cm−1 for the d3 compound with successive transitions falling to lower frequencies have been assigned to the ring puckering vibrations of both the low energy equatorial and high energy axial conformers. These data have been fitted to an asymmetric potential function of the form: V(cm−1)=(4.78±0.10)×105X4−(3.08±0.04)×104X2 +(2.18±0.1)×104X3 with an assumed reduced mass of 160 amu for the light compound. Utilizing this potential the difference between the puckering angles for the two conformers was calculated to be 4.3° with the equatorial conformer having the larger value of 20.7°. A similar potential was obtained for the d3 molecule. The energy difference between the equatorial and axial forms was found to be 247±20 cm−1 (706 cal/mol) and a barrier of 641±20 cm−1 (1.83 kcal/mol) was found for the interconversion. Experimental values for the ΔH of both the liquid (354±179 cm−1) and gas (295±75 cm−1) from relative intensities of different Raman band pairs over 85 and 37 °C temperature ranges, respectively, were found to be consistent with the value obtained from the potential function. These results are compared to the corresponding quantities for similar molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452305
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  • 7
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    High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO2 with transition metal additions (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-26
    Description: To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO 2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813  μ W m −1  K −2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO 2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Atomistic growth phenomena of reactively sputtered RuO2 and MnO2 thin films (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-07-03
    Description: We have synthesized RuO 2 and MnO 2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO 2 nanorods and faceted, nanocrystalline MnO 2 , are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O 2 molecules are preferentially adsorbed at their respective RuO 2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO 2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO 2 . Due to this atomic scale decomposition, MnO 2 may have to be renucleated during growth, which is consistent with experiments.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Thin film based plasmon nanorulers (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-07
    Description: In this work, isolated metal nanoparticles are supported on a dielectric thin film that is placed on a conducting plane. The optical scattering characteristics of these metal nanoparticles are directly correlated with the localized surface plasmon states of the nanoparticle—image particle dimer, formed in the conducting plane below. Quantification of plasmon resonance shifts can be directly correlated with the application of the plasmon nanoruler equation. This simple geometry shows that direct optical techniques can be used to resolve thickness variations in dielectrics of only a few nanometers.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Charge trapping of Ge-nanocrystals embedded in TaZrOx dielectric films (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-01-16
    Description: Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO x by thermal annealing of co-sputtered Ge-TaZrO x layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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