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  • American Institute of Physics (AIP)  (17)
  • 2015-2019  (2)
  • 2000-2004  (3)
  • 1990-1994  (12)
  • 1
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    Instability and associated roll structure of Marangoni convection in high Prandtl number liquid bridge with large aspect ratio (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-02-19
    Description: This paper reports the experimental results on the instability and associated roll structures (RSs) of Marangoni convection in liquid bridges formed under the microgravity environment on the International Space Station. The geometry of interest is high aspect ratio ( AR = height/diameter ≥ 1.0) liquid bridges of high Prandtl number fluids ( Pr = 67 and 207) suspended between coaxial disks heated differentially. The unsteady flow field and associated RSs were revealed with the three-dimensional particle tracking velocimetry. It is found that the flow field after the onset of instability exhibits oscillations with azimuthal mode number m = 1 and associated RSs traveling in the axial direction. The RSs travel in the same direction as the surface flow (co-flow direction) for 1.00 ≤ AR ≤ 1.25 while they travel in the opposite direction (counter-flow direction) for AR ≥ 1.50, thus showing the change of traveling directions with AR . This traveling direction for AR ≥ 1.50 is reversed to the co-flow direction when the temperature difference between the disks is increased to the condition far beyond the critical one. This change of traveling directions is accompanied by the increase of the oscillation frequency. The characteristics of the RSs for AR ≥ 1.50, such as the azimuthal mode of oscillation, the dimensionless oscillation frequency, and the traveling direction, are in reasonable agreement with those of the previous sounding rocket experiment for AR = 2.50 and those of the linear stability analysis of an infinite liquid bridge.
    Print ISSN: 1070-6631
    Electronic ISSN: 1089-7666
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-02-07
    Description: Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp 2 -bonded boron nitride (sp 2 BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp 2 BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 10 4 at ±10 V of biasing with increasing the sp 2 BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation of the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp 2 BN thickness. The forward current follows the Frenkel-Poole emission model in the sp 2 BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp 2 BN interlayer, while that of the major carriers for forward current is much less affected.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
    Electronic Resource
    Electronic Resource
    Monoenergetic positron beam study of Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3880-3885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (tBAs) were investigated using a slow positron beam. The concentration of Ga vacancies, VGa, generated in GaAs epilayers was increased drastically by heavy Si doping of more than 1019 cm−3, where the deactivation of Si occurred. This result suggests that the deactivation of Si in GaAs is mainly caused by a VGa-related defect, such as a VGa-SiGa complex. The VGa concentration in the samples grown using tBAs was found to be almost the same as that grown using arsine (AsH3). On the other hand, the VGa concentration in MOCVD-grown Si-doped GaAs is lower than that in molecular-beam-epitaxy-grown material for the same Si concentrations. The generation mechanisms of VGa were found to be greatly dependent on the growth and/or doping methods, in addition to the Si doping concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352900
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal conversion of semi-insulating GaAs in high-temperature annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 615-618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature annealing of semi-insulating GaAs has been studied. Thermal conversion induced by annealing at 1060–1200 °C can be explained by the causes of both the reduction of EL2 concentration and the generation of deep acceptors during high-temperature annealing. Both of them can be rationalized by the supposition that the antisite defect, AsGa, breaks into AsI and VGa, and the latter is a deep acceptor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353371
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of CuAlSe2 grown by iodine chemical vapor transport (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1648-1655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistivities, carrier concentrations, optical absorption, and photoluminescences of undoped and Cd,Zn-doped CuAlSe2 single crystals grown by chemical vapor transport were studied. The electrical and optical properties were almost unchanged after annealing under Se pressure. However, the resistivity increased about seven orders of magnitude after annealing in vacuum. The resistivity also increased by Cd or Zn doping. The samples showed p-type conduction even when Cd or Zn was doped. An acceptor ionization energy of about 65 meV was obtained. The mobility showed the dominance of lattice scattering for temperatures between 80 and 200 K. Two independent, broad, red luminescences having their own excitation energies were observed at relatively low temperature. We have proposed the configuration coordinate model for this characteristic emission. The emission can be interpreted as radiative transitions from a deep center to the respective A or C valence bands, accompanied by a lattice relaxation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349531
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  • 6
    Electronic Resource
    Electronic Resource
    11B and 10B magic-angle spinning nuclear magnetic resonance studies of cubic boron nitride films prepared by plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1734-1737 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 11B and 10B magic-angle spinning nuclear magnetic resonance (MAS NMR) spectroscopy was conducted to characterize cubic boron nitride films prepared by plasma chemical vapor deposition. Similarities and differences between cubic boron nitride films and polycrystals synthesized at high pressure and high temperature were clarified by chemical shift and linewidth. The same local structure and tetrahedral symmetry of boron atoms in both forms was demonstrated, and a higher defective density appeared to exist in the film form, agreeing well with results from Raman measurements. Noncubic-phase impurities, i.e., amorphous, turbostratic, and hexagonal phases, in films were also detected in 11B MAS NMR spectra, and the possibility of removing these impurities by chemical etching was demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338516
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  • 7
    Electronic Resource
    Electronic Resource
    Heteroepitaxy and characterization of CuGaSe2 layers grown by low-pressure metalorganic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3009-3015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuGaSe2 chalcopyrite compounds were grown heteroepitaxially on both GaAs and GaP substrates by means of the low-pressure metalorganic chemical-vapor deposition method. Optical and structural properties were characterized comprehensively by photoreflectance (PR), photoluminescence (PL), x-ray diffraction, transmission electron microscopy, transmission electron diffraction, and electron-probe microanalysis. The CuGaSe2 epilayers had c(001) surface on GaAs(001) substrates and a(100) surface on GaP(001) substrates, respectively, the results being similar to the case of CuAlSe2. Energies of A, B, and C excitons associated with uppermost valence bands were determined from analysis of PR spectra, and the energies of good-quality epilayers are close to those of the bulk crystal. The slight increase of the crystal-field splitting in the valence bands were discussed in terms of the lattice strain in the epilayer caused by the lattice mismatch. Low-temperature PL spectra exhibited an intense peak at 1.71 eV, the energy being in good agreement with the A-exciton energy. A weak peak due to a free-to-acceptor transition was also observed at 1.66 eV. A broad PL peak at 1.76 eV was observed together with the intense band-edge PL at 1.67 eV, and the peak was assigned to relate to the B-exciton transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357503
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  • 8
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of 2-adamantylamino-5-nitropyridine crystals (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2583-2585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several organic materials with a bulky donor group have been developed for second-order nonlinear optics. Among these materials, 2-adamantylamino-5-nitropyridine (AANP) crystal has the largest second-order nonlinear optical coefficient. By second-harmonics measurement at 1.064 μm, coefficients of d31 and d33 were determined to be 80 and 60 pm/V, respectively. Angle-tuned phase-matched second-harmonic generation with a conversion efficiency=2×10−3 W−1 has been demonstrated using a 1 mm AANP bulk crystal at 1.064 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104829
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  • 9
    Electronic Resource
    Electronic Resource
    Noncritical phase matching for guided-wave frequency conversion (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2294-2296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inhomogeneities in waveguide dimensions are a serious problem for guided-wave frequency conversion devices. We discuss waveguide designs that make the phase matching "noncritical'' with respect to small changes in dimensions. Application of noncritical phase matching results in larger fabrication tolerances, facilitating the practical realization of nonlinear devices with long interaction lengths. We experimentally demonstrate the existence of a noncritical thickness in a lithium niobate waveguide, and analyze the dimensional tolerances for second-harmonic generation in a polymer waveguide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104166
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  • 10
    Electronic Resource
    Electronic Resource
    Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3035-3037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dry surface passivation of GaAs using the combination of H2S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H2S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH4)2Sx treatment in terms of the sulfur coverage ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110250
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