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  • American Institute of Physics (AIP)  (116)
  • Cell Press  (57)
  • 2015-2019  (49)
  • 2000-2004  (58)
  • 1995-1999  (66)
  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon (Si) thin films with very-low defect density for solar cells were fabricated by using high-speed (0.7–4.5 mm/s) zone-melting crystallization (ZMC) of amorphous-silicon (a-Si) thin films, resulting in films that had defects below the detection limit of electron spin resonance (ESR). In this letter, poly-crystalline silicon (poly-Si) films for zone-melting recrystallization (ZMR) and a-Si films for ZMC were each sandwiched between two SiO2 films. The Si films were 0.3–2.0 μm thick, the top SiO2 films were 0.35–1.5 μm thick, and the bottom SiO2 films were 0.18–1.2 μm thick. The a-Si ZMC films had higher crystal quality than did the poly-Si ZMR films. Over 90% of the grains in the a-Si ZMC films had preferred (100) orientation when the films were formed at scan speeds 0.7–4.5 mm/s. Transmission electron microscopy (TEM) revealed that neither distinct grain boundaries nor defects were visible in the a-Si ZMC films within the 9-μm-diam observation field. The a-Si ZMC films fabricated from the a-Si films with the thickness smaller than 1 μm had no voids. Such a low defect density indicates that silicon thin-film solar cells with high efficiency can be fabricated by using such very-low defect density silicon thin films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 7902-7909 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The unimolecular dissociation of trichloroethylene in its electronic ground state has been investigated using an infrared multiphoton dissociation combined with photofragmentation translational spectroscopy to measure product translational energies. The main reaction channel was found to be HCl elimination on the basis of observed product time-of-flight (TOF) spectra. A center-of-mass translational energy distribution for this channel provides direct evidence for competition between two channels, three- and four-centered HCl eliminations. Cl elimination was found to be a minor but significant channel from observed Cl+ and C2HCl+TOF spectra. The branching ratios were determined as 0.28, 0.55, and 0.17 for the three- and four-centered HCl eliminations and the Cl elimination, respectively. The three-centered channel exhibits a "statistical'' translational energy distribution which is typical for a reaction with no potential energy barrier in the reverse reaction, that is to say, no exit barrier reaction. In contrast, the four-centered channel exhibits a "nonstatistical'' translational energy distribution having a peak at around 2 kcal/mol in energy, indicating that a significant exit barrier exists in the channel. The fraction of potential energy converted to translational energy was estimated to be around 10%. Ab initio calculations at the QCISD(T)/6-311+G**//MP2(FC)/6-31G* level were employed to confirm the reaction mechanism. The agreement in the energetics is quite good. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1617-1623 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photofragment translational spectroscopy of CBrClF2 at 157.6 nm was carried out using a crossed laser-molecular beams technique. Detected species are Br, Cl, and CF2. From the analyses of time-of-flight (TOF) spectra for these three species, the molecules were found to dissociate competitively through CBrF2+Cl, CClF2+Br, and CF2+Br+Cl channels with the branching ratio of 1.0:1.6−0.22+0.13:0.87−0.18+0.13. All of the CClF2 and CBrF2 radicals were found to dissociate spontaneously to produce Cl or Br+CF2, respectively. The angular distributions of these secondary products were found to be anisotropic. These fast secondary reactions are discussed on the basis of the calculated dissociation rates and rotational frequencies. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1624-1630 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photodissociation dynamics from the repulsive nσC−X* (X=Cl,Br) states of CBrClF2 has been studied by propagating wave packets on the two diabatic potential energy surfaces obtained by an approximate diabatization of ab initio complete active space self-consistent field (CASSCF) potential energy surfaces. The diabatization was carried out so as to eliminate the transition-dipole moment between the two excited states. The results have confirmed the occurrence of simultaneous triple dissociation CBrClF2→Br+Cl+CF2 observed in the 157.6 nm photolysis of CBrClF2. The triple dissociation has been found to occur on both the upper and lower adiabatic surfaces with oscillation in the population in between. © 2001 American Institute of Physics.
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  • 5
    Publication Date: 2015-02-20
    Description: We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al 2 O 3 and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm 2 /V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al 2 O 3 ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm 2 /V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 6
    Publication Date: 2015-03-25
    Description: We have systematically studied the impact of interfacial InAs layers on Al 2 O 3 /GaSb metal-oxide-semiconductor (MOS) interface properties. The interfacial InAs layers improved the capacitance versus voltage ( C-V ) curves of the Al 2 O 3 /GaSb MOS capacitors (MOSCAPs) fabricated by an ex-situ process. The minimum interface-trap density ( D it ) value of an Al 2 O 3 /1.5-nm-thick InAs/p-GaSb MOSCAP is ∼6.6 × 10 12  cm −2 eV −1 , which is reduced by ∼50% from that of ∼1.4 × 10 13  cm −2 eV −1 in an Al 2 O 3 /p-GaSb MOSCAP. Also, the interfacial InAs layers significantly improved the C-V curves of the Al 2 O 3 /n-GaSb MOSCAPs. The InAs layer can improve the Al 2 O 3 /GaSb MOS interface properties both in valence band side and in conduction band side.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 7
    Publication Date: 2016-11-24
    Description: We demonstrate a single channel III–V complementary metal-oxide-semiconductor (CMOS) transistors by ultrathin body InAs/GaSb-on-insulator (-OI) channels on Si. The ultrathin InAs layers with the quantum confinement and tight gate-control of the identical InAs/GaSb-OI channel can realize III–V CMOS operation. The quantum well InAs/GaSb-OI on Si structures with the proper thickness of the InAs and GaSb layers can allow us to operate both n-channel and p-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs and p-MOSFETs) with high channel mobilities in an identical InAs/GaSb-OI transistor. The InAs thickness needs to be ≲2.5 nm for CMOS operation in the single channel InAs/GaSb-OI structure.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 8
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4354-4359 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 (CIS) films with Cu/In ratios of γ=0.82–1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 177-191 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cold fluid theory of the Pierce beam–plasma system is modified by the incorporation of warm plasma effects. The controlling parameter α in the cold theory, where α=Lωp/V0, L=diode width, ωp=plasma frequency, and V0=beam velocity at injection, is replaced in the warm theory by an effective value of α involving the thermal velocity. The theory is verified by means of a fluid simulation code; the phase states for a cold plasma, including the chaotic state, are recovered for a warm plasma, but with a shift in values of the bifurcation parameter. Furthermore, in order to include plasma kinetic effects, an extensive electrostatic particle simulation code is developed to model the Pierce system. Among the new physical effects arising in this particle model are the local and global thermalization of electrons by electrostatic waves, and blocking oscillations due to particle reflection and trapping. As the parameter α is decreased, the electric field at the injection point typically changes state as follows: blocking oscillation→small fluctuations→quasisteady oscillation→prechaotic oscillation→chaos→blocking oscillation→dc electric field. The mechanics of chaotic oscillations in the Pierce system are examined with particular regard to kinetic effects. © 1996 American Institute of Physics.
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