ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2015-2019  (16)
  • 2010-2014  (17)
  • 2000-2004  (41)
  • 1990-1994  (36)
  • 1
    Electronic Resource
    Electronic Resource
    Magnetic tunnel junctions on magnetic shield smoothed by gas cluster ion beam (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6653-6655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, a technique, gas cluster ion beam (GCIB), was introduced to smooth the bottom NiFe magnetic shield for magnetic tunnel junction (MTJ) read heads. The GCIB treatment can bring the surface roughness of the shield from 15 to 20 Å to around 5 Å, and the most of scratch marks can be removed. The efficiency of the GCIB process is dependent on the initial surface morphology. The MTJs grown on the magnetic shield smoothed by the GCIB show that the resistance area product RA is increased from 60 to ∼100 Ω μm2 with the GCIB dose up to 1×1016 ions/cm2, arising from a smooth insulating layer, meanwhile, the tunneling magnetoresistance (TMR) is almost constant or slightly decreases. This GCIB process can also improve breakdown voltage (approximately 0.019 V per 1015 ions/cm2) of the MTJs, and slightly increase the ferromagnetic coupling mainly due to the change of the surface morphology. Using this technology, an RA as low as 3.5–6.5 Ω μm2 together with a TMR of 14%–18% can be obtained for MTJs grown on the GCIB treated NiFe magnetic shield. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359217
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Linearity and hysteresis in the magnetoresistive response of (NiFe,NiFeCo)/Cu and Co/Cu/NiFe multilayers in patterned stripes : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6379-6381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linearity and hysteresis in the magnetoresistive (MR) response of NiFe/Cu and NiFeCo/Cu multilayers prepared by ion beam sputtering, and Cu/Co/Cu/NiFe multilayers prepared by MBE are investigated. These characteristics in the linear regions for the second peak of antiferromagnetically coupled NiFe/Cu multilayers are almost the same as those of NiFeCo/Cu ones at 50-Hz ac applied fields. The MR amplitude at the first peak is inferior to that at the second one, whereas, the linearity and hysteresis are superior. In weakly coupled Cu/Co/Cu/NiFe multilayers, a nonhysteretic MR response is obtained at a NiFe layer thickness of 10 A(ring). The linearity and symmetry around the zero magnetic field of the MR curve depend on the Cu layer thickness. When the thicknesses of the NiFe and Cu layers are 10 and 45 A(ring), respectively, good linearity and no hysteresis are observed without biasing techniques. The output levels in the linear regions of three different multilayers are 1.5–2.5 times as large as that of the conventional Permalloy film. These multilayers are promising materials for the fabrication of MR head for ultrahigh density recording.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355356
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Extra current channels in longitudinally biased magnetic tunnel junctions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4688-4690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments on the longitudinal biasing of microsized magnetic tunnel junctions have been conducted using permanent magnets partially overlapping the junction area. The tunneling magnetoresistance ratio showed a strong dependency on the overlap length, since even a 10% overlap of the sensor length resulted in a 25% drop from its initial value without overlap. Analytical and micromagnetic analyses have demonstrated that this decrease comes from extra current channels, located in the regions below the permanent magnets, that shorted a large amount of the sense current from the central active region in the antiparallel magnetization state. The high uniaxial anisotropy field, induced by the permanent magnets in the overlapped regions, created particular magnetic configurations responsible for these low resistance paths. Several alternatives, using antiferromagnetic material in place of the permanent magnets or a modified design of the magnetic tunnel junction structure, are presented and discussed to prevent this extra current channel effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373131
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electrical breakdown of the magnetic tunneling junction with an AlOx barrier formed by radical oxidation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5194-5196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the dielectric breakdown in magnetic tunnel junctions (MTJs) was studied. The MTJ structure is Ta50/NiFe100/Co20/AlOx/Co30/RuRhMn100/Ta50 with the bottom lead of Ta50/Cu500/Ta50 and the top lead of Cu2000/Ta50 (in Å), where the tunneling barrier was formed by 2–20 min radical oxygen oxidation of a 10 Å-thick Al layer. The junctions with area from 2×2 to 20×20 μm2 were patterned using the photolithography process, leading to tunneling magnetoresistance up to 17.2% and resistance-area product ranging from 350 Ω μm2 to 200 kΩ μm2. The junctions studied show dc breakdown voltage from 0.7 to 1.3 V, depending on the junction area and the oxidation time. Long oxidation time up to 14 min and a small junction area results in a large dc breakdown voltage. The electrostatic discharge (ESD) of MTJs was tested by using a human body model. The ESD breakdown voltage increases with decreasing junction resistance. These results are discussed in terms of the E-model based on the field-induced distortion of atomic bonds in the oxide barrier. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373292
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Linear magnetoresistive change at zero field in Cu/Co/Cu/NiFe multilayers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1702-1704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu/Co/Cu/NiFe multilayers were prepared by molecular beam epitaxy and their magnetoresistive (MR) properties in dc and ac magnetic field were studied. With a view to application such as MR head, minor loops of MR transfer curves with applied fields of ±50 Oe were particularly investigated. By optimizing the thickness of each layer, a linear and nonhysteretic MR response was obtained. The output voltage was roughly estimated as two and a half times that of a conventional NiFe element in an ac magnetic field at 50 Hz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110690
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2424-2426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, submicron-size (down to 0.273 μm2) spin–dependent tunnel junctions with resistance as low as ∼30 Ω μm2 have been fabricated, where the tunneling barrier of AlOx was formed by in situ natural oxidation. These junctions annealed at 250 °C for 5 h showed tunneling magnetoresistance (TMR) of 14.3% and 25.8% for the pinned layers of CoFe/RuRhMn and CoFe/PtMn, respectively, while the TMR is further increased to 31.6% for a synthetic antiferromagnetic pinned layer of CoFe/Ru/CoFe/PtMn due to less interdiffusion at CoFe/Ru interface. The investigation has indicated that the growth of ultrathin Al layer is very sensitive to the surface roughness of bottom ferromagnetic electrode, and large surface roughness leads to small junction resistance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126364
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependence of the band gap in InAsyP1−y (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2722-2724 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the band gap in InAsyP1−y (y=0–0.67) has been determined by photoluminescence, x-ray diffraction, and absorption spectra measurements. We found that the measured data within the temperature range of 77–300 K can be expressed by the equation proposed by O'Donnell and Chen. The band gap at 77 K is given by Eg=1.407−1.073y+0.089y2, while the compositional dependence of the band gap observed at 300 K, agrees with the values previously reported. We confirmed that changes in temperature caused a slight change in the bowing parameters, and hence found that the band gap temperature dependence of InAsyP1−y (y=0–1) varies very little with changes in composition (2.5–3.5×10−4 eV/K). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126455
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Intra-acrosomal organization of a 90-kilodalton antigen during spermiogenesis in the rat (1994)
    Springer
    Cell & tissue research 277 (1994), S. 61-67 
    Details
    ISSN: 1432-0878
    Keywords: Key words: Acrosome development – Antigen localization – Intra-acrosomal migration – Golgi apparatus – Spermiogenesis – Immunocytochemistry – Rat (Wistar)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract. The localization of an acrosomal protein was studied using a monoclonal antibody MN7 raised against mouse spermatozoa. MN7 specifically recognized the anterior acrosome of several mammalian (mouse, rat, hamster) spermatozoa fixed with paraformaldehyde. An immunoblot study with periodate treatment showed that MN7 recognized a carbohydrate region of a 90 kDa protein in an extract of mouse and rat cauda epididymal spermatozoa. The change in distribution of the MN7 antigen during acrosome development was investigated in the rat testis using the pre-embedding immunoperoxidase technique. The antigen first appeared in the proacrosomic granules of spermatids in steps 1–2. Small vesicles adjacent to the outer acrosomal membrane and the developing acrosomic system were immunoreactive during steps 4–7. The majority of the antigen was then redistributed to the head-cap portion during steps 8–18, and finally restricted to the anterior acrosome in the step 19-spermatid. These results suggest that the antigen is transported to the acrosome by way of the vesicles that originate from the Golgi apparatus during early spermiogenesis, and are then delivered to the final destination within the acrosome by the intra-acrosomal migration during late spermiogenesis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00303081
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Intra-acrosomal organization of a 90-kilodalton antigen during spermiogenesis in the rat (1994)
    Springer
    Cell & tissue research 277 (1994), S. 61-67 
    Details
    ISSN: 1432-0878
    Keywords: Acrosome development ; Antigen localization ; Intra-acrosomal migration ; Golgi apparatus ; Spermiogenesis ; Immunocytochemistry ; Rat (Wistar)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract The localization of an acrosomal protein was studied using a monoclonal antibody MN7 raised against mouse spermatozoa. MN7 specifically recognized the anterior acrosome of several mammalian (mouse, rat, hamster) spermatozoa fixed with paraformaldehyde. An immunoblot study with periodate treatment showed that MN7 recognized a carbohydrate region of a 90 kDa protein in an extract of mouse and rat cauda epididymal spermatozoa. The change in distribution of the MN7 antigen during acrosome development was investigated in the rat testis using the pre-embedding immunoperoxidase technique. The antigen first appeared in the proacrosomic granules of spermatids in steps 1–2. Small vesicles adjacent to the outer acrosomal membrane and the developing acrosomic system were immunoreactive during steps 4–7. The majority of the antigen was then redistributed to the head-cap portion during steps 8–18, and finally restricted to the anterior acrosome in the step 19-spermatid. These results suggest that the antigen is transported to the acrosome by way of the vesicles that originate from the Golgi apparatus during early spermiogenesis, and are then delivered to the final destination within the acrosome by the intra-acrosomal migration during late spermiogenesis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00303081
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Characterization of the antigen recognized by a monoclonal antibody MN9: unique transport pathway to the equatorial segment of sperm head during spermiogenesis (1992)
    Springer
    Cell & tissue research 270 (1992), S. 459-468 
    Details
    ISSN: 1432-0878
    Keywords: Acrosome ; Equatorial segment of spermatozoa ; Transport pathway ; Spermiogenesis ; Monoclonal antibody ; Immuno-electron microscopy ; Mouse (BALB/c; CD-1; ICR) ; Rat (Wistar) ; Golden hamster-Human
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary MN9, a monoclonal antibody raised against mouse spermatozoa, specifically recognizes the equatorial segment of sperm head in several mammalian species, including humans. Colloidal gold-immuno-electron microscopy of mouse spermatozoa has shown that the antigen is localized in the space between the outer and inner acrosome membranes and on the acrosome membranes at the equatorial segment. Immunoblotting after electrophoresis of spermatozoa from the cauda epididymidis has identified two immunoreactive bands: 38 kDa and 48 kDa in mouse, and 48 kDa in rat. During spermiogenesis in rat, this antigen is transported to the equatorial segment via a unique pathway, first appearing in some cisternae of the endoplasmic reticulum and in the Golgi apparatus of spermatids at around step 3. The antigen can further be found on the vesicles at thetrans-side of the Golgi apparatus, in the matrix of the head cap, and on the head cap membrane in step-4 to step-7 spermatids. The antigen appears to be concentrated at the equatorial segment during late spermiogenesis. Neither the (pro-)acrosomic granule nor the surrounding membrane are required in this pathway. This pathway can be termed the ‘Golgi-head cap tract’.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00645047
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...