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  • 1
    Electronic Resource
    Electronic Resource
    Propargylene: A C3H2 isomer with unusual bonding (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 4763-4773 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Propargylene was identified in a matrix as a product of photolysis of cyclopropenylidene and diazopropyne. The molecule is a triplet. The optimum geometry predicted by ab initio calculations corresponds to a structure HC≡C–C¨H. The transition structure in the interconversion HC≡C–C¨H(arrow-right-and-left)HC(overdot)=C=C(overdot)H(arrow-right-and-left)HC¨–C≡CH is very low in energy and close to the energy of the vibrational ground state. Owing to this nonrigidity, computed infrared (IR) frequencies based on a harmonic treatment do not match the experimental spectrum. When this nonrigidity is taken into account by using a nonharmonic approximation calculated UMP2/6-31G** IR spectra are in good agreement with the observed spectra of HCCCH and DCCCD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456765
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  • 2
    Electronic Resource
    Electronic Resource
    Third order ab initio calculations of amplitudes of two-photon absorption for ions across the lanthanide series (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 1390-1395 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The third-order electron-correlation theory of two-photon absorption in rare earth ions in crystals has been extended by the effective operators arising from doubly excited configurations. The approach defined in terms of one-particle effective operators has been applied to the Pr+3, Nd+3, Eu+3, Gd+3, Tb+3, and Tm+3 ions. The relative importance of third-order contributions and their properties across the lanthanide series are presented. The discussion is based on the numerical results of exact ab initio calculations performed within the perturbed-function approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456081
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  • 3
    Electronic Resource
    Electronic Resource
    Third order ab initio calculations of the f↔f transition amplitudes for ions across the lanthanide series (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 703-710 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The behavior of various contributions to the f↔f transition amplitude defined up to the third order in perturbation theory is analyzed. Main attention is paid to the third-order contributions which are due to electron correlation inside the rare earth ion and arise from the static and dynamic models. The discussion is based on the numerical results of exact ab initio calculations performed for Pr+3, Nd+3, Eu+3, Gd+3, Tb+3, and Tm+3 ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455193
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  • 4
    Electronic Resource
    Electronic Resource
    Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5336-5339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron velocity distribution is calculated for an idealized model of the high electron mobility transistor using a many-particle Monte Carlo model and a self-consistent two-dimensional Poisson solver. Hot electron effects, nonstationary effects, and real space transfer are analyzed. The results show that significant velocity overshoot, 2.8×107 cm/s at 300 K and 3.7×107 cm/s at 77 K exists under the gate and that the velocity overshoot is limited by both k-space transfer and real-space transfer. The values of the overshoot velocities are much smaller than those obtained from the more conventional drift-diffusion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334851
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  • 5
    Electronic Resource
    Electronic Resource
    Collectivity and geometry. VI. Spectra and shapes in the three-dimensional case (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 970-980 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: In this paper the reports on collectivity and geometry are concluded, where the microscopic description of many-body collective motions and their relation with the symplectic geometry of the n-particle system are reexamined. In the present paper it is shown that, modulo linear canonical transformations, the symplectic algebra sp(6,R) admits only three maximal subalgebras sp(2,R)⊕o(3), u(3), and cm(3), which contain the rotation algebra o(3). The objective is to discuss the spectra and shapes of "pure'' many-body systems for which the Hamiltonian is associated with a Casimir operator up to the second degree in the generators of a given maximal subalgebra, as well as those of "transitional'' systems, where the Hamiltonian is a function of the generators and Casimir operators of several of the maximal subalgebras.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528342
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  • 6
    Electronic Resource
    Electronic Resource
    Oxide formation during plasma etching of silicon-containing resists (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1510-1512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface modification during oxygen plasma etching of polysilylmethylstyrene resists has been monitored using x-ray photoelectron spectroscopy. Plasma exposure converted the silicon present in the polymers to an oxidized surface region which prevented further chemical etching. Conversion was more rapid and more complete when etching under conditions where higher energy ion bombardment occurred. Polysilylmethylstyrene reached a steady-state oxide thickness between 3.4 and 5.8 nm, depending on etching conditions. A copolymer of this material with chloromethylstyrene showed a comparable thickness when etched at high ion energies, but did not reach a steady state when etched at conditions where the average ion energy was below 110 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101337
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  • 7
    Electronic Resource
    Electronic Resource
    Preparation and patterning of YBaCuO thin films obtained by sequential deposition of CuOx/Y2O3/BaF2 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 698-699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of YBaCuO were prepared by stacking layers of CuOx , Y2O3, and BaF2 onto substrates held at room temperature. The CuOx layer was obtained by oxidizing in air a previously deposited metallic Cu film. After deposition of the subsequent layers, the films were annealed at 880 °C in flowing oxygen. Samples 1 μm thick on sapphire showed an onset at Tonsetc =85 K and zero resistance at T0c =70 K; on yttria-stabilized zirconia (YSZ), Tonsetc =90 K and T0c =80 K. Patterned films are easily obtained by applying conventional photolithographic methods to the Cu film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100644
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  • 8
    Electronic Resource
    Electronic Resource
    Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1623-1625 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99931
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  • 9
    Electronic Resource
    Electronic Resource
    Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1167-1169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a numerical study of the effects of nonthermal phonon distributions on electron transport across heterolayers. For the microscopic analysis of both the electron and phonon dynamics, an ensemble Monte Carlo method has been used which includes a realistic band structure. It is observed that the abrupt energy gain at the heterointerface generates significant perturbations in the phonon distribution through the subsequent relaxation and heats the electron distribution because of the reabsorption of nonequilibrium phonons. The influence of a wide range of operating conditions on hot-phonon effects is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99194
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  • 10
    Electronic Resource
    Electronic Resource
    On the possibility of transistor action based on quantum interference phenomena (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 350-352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented. Transmission and reflection coefficients are computed by use of a tight-binding Green function technique. As expected, the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that the penetration of the wave function of the electrons can be controlled by external voltages. We conclude that transistor action based on quantum interference should be observable in such structures, and we present general results for the functional dependences of the transmission coefficient which corresponds to a transconductance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100966
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