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  • Wiley  (214)
  • American Institute of Physics (AIP)  (90)
  • American Association for the Advancement of Science (AAAS)
  • Emerald
  • 2020-2024  (17)
  • 1995-1999  (312)
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  • 11
    Electronic Resource
    Electronic Resource
    Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 425-429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One contributing transition is a bulk-like signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second contributing signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second signal and the bulk-like signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heterointerface is larger than that of the homointerface. Reflectance difference measurements further support the existence of two spatially separated GaAs regions, which produce two independent overlapping optical modulated signals in the ZnSe/GaAs/GaAs heterostructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370747
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  • 12
    Electronic Resource
    Electronic Resource
    Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4800-4802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370486
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  • 13
    Electronic Resource
    Electronic Resource
    Growth and optical characterization of indirect-gap AlxGa1−xAs alloys (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 418-424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonintentionally doped AlxGa1−xAs layers with 0.38≤x≤0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when growing high-aluminum-content layers by this technique. Furthermore, Raman measurements show the quadratic variations of longitudinal optical phonon frequencies with aluminum concentration in good agreement with previous experimental results. In this work we show that high quality indirect-gap AlxGa1−xAs samples can be grown by LPE under near-equilibrium conditions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370746
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  • 14
    Electronic Resource
    Electronic Resource
    Transport and magnetic properties of Tl2Mn2−xRuxO7 diluted system (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5405-5407 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and transport properties of Tl2Mn2−xRuxO7 pyrochlores are analyzed as a function of the substitution rate (0≤x≤2). For x≤0.2, the system exhibits colossal magnetoresistance (CMR) and ferromagnetic ordering. For higher doping rates CMR is completely washed out and the transport properties mimics that of the Tl2Ru2O7 pure compound with a semiconductor-to-metal transition at a temperature that decreases as x increases. The magnetic frustration progressively increases signalling the increase of antiferromagnetic interactions and the geometrical frustration intrinsic to the pyrochlore structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369992
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  • 15
    Electronic Resource
    Electronic Resource
    Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2055-2061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the effect of thermal processes on the optical properties (refractive index, optical gap, Tauc coefficient, and Urbach energy) of SiNx:H films. Films with three different nitrogen to silicon ratios (x=0.97, x=1.43, and x=1.55, respectively) were deposited by a chemical vapor deposition technique assisted by an electron cyclotron resonance generated plasma. After deposition they were subjected to rapid thermal annealing at temperatures ranging from 300 °C to 1050 °C. We found that the percolation threshold for Si–Si bonds (at x=1.1) separates films with different response to thermal treatments. The changes of the Tauc coefficient and the Urbach energy at moderate annealing temperatures indicate a structural relaxation of the network for the films with x above the percolation threshold, while at higher temperatures the trends are inverted. In the case of x below the percolation limit the inversion point is not observed. These trends are well correlated with the width of the Si–N infrared stretching absorption band. Additionally the samples with as-grown x=1.43 show a good correlation between the Urbach energy and the density of unpaired spins in silicon dangling bonds. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371008
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  • 16
    Electronic Resource
    Electronic Resource
    Photoreflectance spectroscopy of CdTe(001) around E1 and E1+Δ1: linear electro-optic spectrum (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2062-2065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the measurement of the linear electro-optic (LEO) reflectance spectrum of CdTe (001) in an energy range around the E1 and E1+Δ1 interband transitions. This spectrum shows a sharp peak localized in energy around E1 and a second shorter peak around E1+Δ1. We show that the theoretical model developed in an earlier article for the LEO line shape of GaAs (001) gives an accurate description of the experimental LEO CdTe spectrum as well. This model includes two contributions to the LEO line shape, a first one proportional to the normalized energy derivative of the reflectance spectrum and a second one associated to the sample reflectance. The large spin-orbit splitting energy of CdTe, (Δ1(approximate)0.6 eV) allows for a neat separation of the contributions to the LEO spectrum of the E1 and E1+Δ1 critical points, providing a critical test for the LEO line shape model. From the fitting we obtain d′/d=1.5 for the conduction band to valence band deformation potential ratio and E2=9.1 eV for the interband deformation potential in the Brooks notation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371009
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  • 17
    Electronic Resource
    Electronic Resource
    Fast movable remotely controlled Langmuir probe system : Proceedings of the 12th topical conference on high temperature plasma diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 415-418 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile remotely controlled fast reciprocating Langmuir probe has been developed for the TJ-II stellarator. The main components of the system are a removable head, containing the measurement tips, and a displacement system that enables the probe to be displaced in vacuum. The probe displacement system has two different components: a slow one (course length≤0.8 m) to set the probe at the initial measurement position, and a fast one (run length=0.1 m) to obtain the desired measurements within an adjustable time interval during the plasma discharge. The radial movement of the probe is controlled remotely by means of a programmable logical control system, with a radial resolution of better than 1 mm. The fast displacement of the probe (up to 1.7 m/s) is achieved by using a pneumatic system. Its position as a function of time is monitored by means of the on-line response of a linear resistor attached to the fast displacement system. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149350
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  • 18
    Electronic Resource
    Electronic Resource
    Electrochemical cell for the preparation of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3627-3630 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a practical electrochemical cell to fabricate porous silicon layers (PSLs) is described. This cell is useful to rapidly produce PSLs without the need to prepare new electrochemical solutions. The cell is also adapted for the formation of PSLs in the dark or under illumination, with nitrogen flow in the solution. The special design of the silicon wafer support guarantees a homogeneous electrical contact and no solution infiltration into it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147126
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  • 19
    Electronic Resource
    Electronic Resource
    Silicidation process of Ti/TiNx/Si structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 781-785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the most promising metallization schemes on silicon is the TiN/TiSi2/Si structure, since it takes advantage from both the good electrical contact between Si and TiSi2 and the property as a diffusion barrier of TiN. A related system that shows some interesting features is the Ti/TiNx/Si system. The results of two Ti/TiNx/Si structures with different nitride compositions (TiN0.7 and TiN0.8) have been studied. These structures show good electrical characteristics after thermal treatments (〉900 °C) and allow one to obtain a smooth variation of the Schottky barrier height, which could lead to tunable contacts in the 0.57–0.53 eV range. Rutherford backscattering spectrometry and grazing incidence x-ray diffraction have been used to establish that the phase sequence observed during the silicidation process is very dependent on the diffusion rate of silicon through the TiNx layer. Finally, the slowest silicidation rate in the Ti/TiNx/Si system permits a higher incorporation of nitrogen from the atmosphere during the thermal treatment, as determined by nuclear reaction analysis. All these characteristics show that these structures can lead to the preparation of the TiN/TiSi2 C54/TiNx/Si in a single thermal treatment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364140
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  • 20
    Electronic Resource
    Electronic Resource
    Plastic deformation in high critical current melt-textured YBa2Cu3O7 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5515-5517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of high-temperature creep under different conditions in melt-textured YBa2Cu3O7–Y2BaCuO5 composites, with high critical currents before deformation, is investigated. Transmission electron microscopy studies show that the low-temperature oxygenation process causes a strong modification of the as-deformed microstructure and leads to a clear degradation of the superconducting performances. This behavior of the superconducting properties is well correlated with the formation of extended planar defects such as large stacking faults and microcracks that severely diminish the vortex cutting length, thus enhancing the thermal activation effects on the critical currents and the irreversibility line. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363484
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