ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The high Dit is the major problem of III-V compound semiconductor MOSFET, which causesthe pinning of the surface Fermi level near the middle of the energy gap. The GaAs with (NH4)2Sxtreatment (S-GaAs) can remove the native oxides on GaAs and prevent it from oxidizing. The electricalcharacteristics of fluorinated polycrystalline TiO2 films deposited on p-type(100) S-GaAs wereinvestigated. The fluorine from liquid phase deposition solution can passivate the grain boundary ofpolycrystalline TiO2 prepared by MOCVD. The leakage current through the grain boundaries wassuppressed. The leakage current of MOCVD-TiO2/S-GaAs can be improved from 6.8 x 10-6 and0.2 A/cm2 to 3.41 x 10-7 and 1.13 x 10-6A/cm2 under positive and negative electric fields at 1.5 MV/cm,respectively. Dit and k can be improved from 1.44 x 1012 cm-2eV-1 to 4.6 x 1011 cm-2eV-1 and 52 to 65,respectively. The effective oxide charges can be improved from 2.5 x 1012 C/cm-2 to 9.3 x 1011 C/cm-2
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.232.pdf
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