ISSN:
1573-0727
Keywords:
deep sub-micron
;
diagnostics
;
I DDQ testing
;
junction leakage current
;
subthreshold leakage current
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
Abstract I DDQ testing uses an important property of CMOS ICs that in the steady state, the current consumption is very small. Therefore, a higher steady state current is an indicator of a probable process defect. Published literature gives ample evidence that elevation in the steady state current could be caused due to a variety of reasons besides process defects. As technology moves into deep sub-micron region, the increase in various transistor leakage currents have the potential of reducing theI DDQ effectiveness. In this article, we propose the separation of VDD and VSS supplies for signal and bias paths so that various leakage current components are measured or computed. The methodology provides means for unambiguousI DDQ testing, better defect diagnosis, and can be used for deep sub-micronI DDQ testing.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02341824
Permalink
