ISSN:
1432-0630
Schlagwort(e):
One-dimensional superlattice
;
Misfit dislocations
;
Nucleation of films
;
UHV epitaxy
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract One-dimensional SiGe superlattices with periods ranging from 100 to 800 Å have been deposited on Si substrates by periodically varying the Ge content of a mixed Si1-x Ge x multilayer structure fromx=0 tox=0.15. The deposition was successful, employing and UHV evaporation technique at a substrate temperature of 750°C fulfilling the four conditions: Single crystal growth, no interdiffusion, two-dimensional growth, and pseudomorphic growth. It is shown that mismatch above 8 · 10−3 favours growth by three-dimensional nucleation. The experimentally determined spacing of misfit dislocations is compared with theoretical results obtained by van der Merwe. The pseudomorphic growth behaviour of layers thinner than a critical thickness could be confirmed.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00896611
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