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  • American Institute of Physics (AIP)  (157)
  • 2020-2023
  • 1990-1994  (157)
  • 1970-1974
  • 1965-1969
  • 1
    Electronic Resource
    Electronic Resource
    State of bismuth in BaBiO3 and BaBi1−xPbxO3: Bi 4f photoemission and Bi L3 absorption spectroscopic studies (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1823-1824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 2p 6d feature in the Bi L3 spectra has different energies in the semiconducting (0.0≤x〈0.7) and the superconducting (x=0.75) compositions of BaBi1−xPbxO3. The Bi 4f core level spectrum shows distinct features ascribable to Bi III and Bi V in BaBiO3 and in the semiconducting compositions; the width of the 4f peaks is also considerably larger in these compositions compared to that in BaBi0.25Pb0.75O3, which shows a single sharp Bi 4f feature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104145
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  • 2
    Electronic Resource
    Electronic Resource
    Optical probing of intermixing in GaAs-AlGaAs multiquantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2968-2970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a combination of low-temperature photoluminescence and luminescence excitation spectroscopies together with appropriate modelization can provide the precise information needed for a thorough control of interdiffusion in quantum well structures. A fit of observed and calculated transition energies up to five energy levels, using the interdiffusion length as a unique parameter, is considered. The potentiality of this procedure to fully characterize the interdiffusion process is illustrated by considering the examples of lightly and heavily intermixed GaAs-AlGaAs multiquantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354606
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation and characterization of Cd3P2 thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 214-218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd3P2 thin films have been deposited on glass substrates by electron beam evaporation technique. The amorphous as-deposited films, after annealing in vacuum in the temperature range 180–200 °C, developed the crystallinity. Such polycrystalline films exhibited preferential orientation along the (224 400) direction. The films indicated n-type conductivity with resistivity value around 1.6 Ω cm at room temperature. The composition, ionicity, and Madelung constant, calculated from x-ray photoelectron spectroscopy data, are Cd3P1.7, 0.08, and 1.68, respectively. From the optical (R and T) and modulation (derivative) spectra, the different parameters, namely, refractive index (n∼3.83), band gap (Eg=0.61 eV), band splitting parameters (crystal field ΔCF=0.03 eV, spin-orbit Δ0=0.08 eV) have been obtained. Photoluminescence emission related to band-to-band transition is observed around 0.51 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354148
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of magnetic, magnetomechanical, and electrical properties of the Tb0.27Dy0.73Fe2−xCox system (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1380-1385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray-diffraction studies carried out on Tb0.27Dy0.73Fe2−xCox (x=0,0.5,1.2,2.0) revealed that all compositions investigated retained the C-15 cubic Laves phase structure. Magnetization and electrical resistivity measurements were carried out in the temperature range 77–800 K. Anomalies observed in the resistivity measurements have been identified corresponding to spin reorientation transitions occurring in this system. Some of these transitions have also been observed in the magnetization data. Magnetostriction and magnetomechanical coupling coefficient were measured on samples of x=0, 0.5, and 1.2 prepared by arc melting as well as arc melting followed by zoning using an induction furnace. Magnetostriction and coupling coefficient were found to decrease with increase in cobalt concentration. Magnetostriction data on zoned samples revealed a change in the easy direction of magnetization from [111] to [100] in the case of x=0.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353258
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  • 5
    Electronic Resource
    Electronic Resource
    Thermally stable, buried high-resistance layers in p-type InP obtained by MeV energy Ti implantation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7238-7243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy Ti+ ions ranging from 1 to 5 MeV were implanted into p-type InP:Zn (for two different zinc concentrations) at both room temperature and 200 °C. The range statistics for Ti implanted at various energies were calculated by analyzing the as-implanted profiles determined by secondary-ion mass spectrometry. Ti did not redistribute during post-implantation annealing except for a slight indiffusion, irrespective of the implant or annealing temperatures used. This behavior is different from the behavior of other implanted transition metals (Fe and Co) in InP, which redistributed highly when the implants were performed at room temperature. In the MeV Ti-implanted InP:Zn the background Zn showed a small degree of redistribution. Rutherford backscattering measurements showed a near virgin lattice perfection for 200 °C implants after annealing. Buried layers with intrinsic resistivity were obtained by MeV Ti implantation in InP:Zn (p=5×1016 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354011
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  • 6
    Electronic Resource
    Electronic Resource
    MeV B compensation implants into n-type GaAs and InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2179-2184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High energy B implantations were performed into n-type GaAs and InP at room temperature in the range of energies from 1 to 5 MeV and fluences from 1011 to 1016 cm−2. The material did not become amorphous for any of the fluences used. Buried layers with resistivities as high as 108 Ω cm and 106 Ω cm were obtained in GaAs and InP, respectively, after heat treatments. The breakdown voltages corresponding to the highest resistivities are 80 and 35 V, respectively, in GaAs and InP. In GaAs, the Rutherford backscattering analysis on the annealed samples showed an aligned yield close to that of a virgin sample, whereas, the yield in InP is more than that of the as-implanted sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351608
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  • 7
    Electronic Resource
    Electronic Resource
    dc reactive magnetron sputtering of titanium-structural and optical characterization of TiO2 films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1421-1427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper deals with the reactive sputtering of titanium in an argon and oxygen mixture. The variation in cathode potential as a function of oxygen partial pressure has been explained in terms of cathode poisoning effects. The titania films deposited during this process have been studied for their structural and optical characteristics. The effect of substrate temperature (from 25 to 400 °C) and annealing (from 250 to 700 °C) on the packing density, refractive index, extinction coefficient, and crystallinity has been investigated. The refractive index varied from 2.24 to 2.46 and extinction coefficient from 2.6 × 10−3 to 10.4× 10−3 at 500 nm as the substrate temperature increased from 25 to 400 °C. The refractive index increased from 2.19 to 2.35 and extinction coefficient changed from 3.2× 10−3 to 11.6 × 10−3 at 500 nm as the annealing temperature was increased from 250 to 700 °C. Anatase and rutile phases have been observed in the films deposited at 400 °C substrate temperature and annealed at 300 °C. The changes in the optical constants at higher substrate temperature have been attributed to an increase in packing density, oxygen content, and crystallinity of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351264
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of voids in interface zones on Lamb-mode spectra in fiber-reinforced composite laminates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 612-619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A recently formulated porous interface layer model is employed to study the influence of bond defects particularly due to the presence of voids in interface zones on Lamb wave propagation in a laminate made of two identical fiber-reinforced laminas. The model is developed making use of the mathematical theory of linear elastic materials with voids to describe the interface zone−the adhesive with its minute separation from the adherent laminas. Theoretical Lamb-mode dispersion spectra in a symmetric bilaminate made of boron fiber-reinforced aluminum sheets are obtained and compared with those obtained assuming perfect bond condition. It is hoped that the model will facilitate ultrasonic nondestructive evaluation of bond strengths in composite laminates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350414
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic properties of ternary Co-B-C melt spun alloys amorphized over an extended concentration range (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5585-5590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field dependence of the magnetization at 4.2 and 294 K and the temperature dependence of the spontaneous magnetization for two series of ternary Co-based alloys, namely Co76−xB24Cx and Co88−yByC12 have been measured. The metalloid content in these series ranges from 24 to 44 at.%, and extends almost to the critical concentration for the disappearance of ferromagnetism. The composition dependence of the average magnetic moment at 4.2 K compares well, for low metalloid content, with data for other Co-based materials and also with the theoretical models that predict a linear dependence of the magnetic moment as a function of concentration. The thermal demagnetizing process at low temperatures is presented. The results have been analyzed in terms of Bloch's law and the stiffness constant has been determined. The complete thermal demagnetization, i.e., down to Tc, is presented only for the alloys with a Curie temperature below 300 K. The results show the well known flattening of the M(T) curve as compared with crystalline materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350536
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetostriction and magnetomechanical coupling in Ho0.85Tb0.15Fe2−xCox system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4450-4454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetostriction and magnetomechanical coupling coefficient have been measured on Ho0.85Tb0.15Fe2−xCox (x=0, 0.5, and 1.2) alloys. The alloys were prepared by arc melting as well as by arc melting followed by zoning using induction furnace. Saturation magnetostriction (λs) and magnetomechanical coupling coefficient are found to decrease with the increase of cobalt concentration. The λs values of the zoned samples of x=0 and 0.5 are seen to be more than those of arc melted samples whereas, it is otherwise in the case of x=1.2. Magnetomechanical coupling coefficient values for all the samples are seen to increase with zoning. Change in the easy direction of magnetization in the case of x=1.2 is reflected in the magnetostriction of zoned samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349101
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