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  • 1
    facet.materialart.
    Unknown
    In:  Other Sources
    Publication Date: 2019-07-13
    Description: Field failures of nichrome thin film resistors have been investigated recently for several pieces of space flight hardware. These failures have involved resistance shifts ranging from a few percent to complete open circuits. Failure analysis and duplication of these failures have revealed that the failures were caused by electrostatic discharge. The failure characteristics and the circuit conditions necessary for failure have been studied for several types of thin film resistors including nichrome and tantalum nitride resistive elements. The effects of latent damage and resistive pattern design will also be discussed.
    Keywords: Electronics and Electrical Engineering
    Type: Testing and Failure Analysis; Nov 14, 1999 - Nov 18, 1999; Santa Clara, CA; United States
    Format: text
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  • 2
    Publication Date: 2019-07-13
    Description: Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.
    Keywords: Electronics and Electrical Engineering
    Type: Capacitator and Resistor Technology; Mar 15, 1999 - Mar 19, 1999; New Orleans, LA; United States
    Format: application/pdf
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