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  • American Institute of Physics (AIP)  (2)
  • 2020-2023
  • 1995-1999  (2)
  • 1925-1929
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 3838-3852 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of electrostatic drift wave turbulence is modeled by the Charney–Hasegawa–Mima equation. The equilibrium density gradient n0=n0(x) is chosen so that dn0/dx is nonzero and spatially variable (i.e., v*e is sheared). It is shown that this sheared diamagnetic flow leads to localized turbulence which is concentrated at max(∇n0), with a large dv*e/dx inhibiting the spread of the turbulence in the x direction. Coherent structures form which propagate with the local v*e in the y direction. Movement in the x direction is accompanied by a change in their amplitudes. When the numerical code is initialized with a single wave, the plasma behavior is dominated by the initial mode and its harmonics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5614-5618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) properties of the II3V2 compound semiconductor Zn3As2, grown by metalorganic vapor phase epitaxy, is investigated in the temperature range of 4.2–350 K. Several lines are reported, believed to be due to acceptors and donor-acceptor complexes in the epitaxial material. From variable temperature PL, the band gap is deduced to be indirect in nature (in contrast to most experimental findings to date which have indicated the band gap to be direct in nature) and ∼25–30 meV larger than the indirect band gap. The direct band gap energy has been extracted from the PL spectra in the range of 110–350 K. A linear relationship is observed in this temperature range with slope dEg/dT=−4.00×10−4 eV/K. PL yielded a value of 1.005 eV for the direct gap at room temperature in good agreement with values between 0.989 and 0.999 eV obtained from transmission and reflection measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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